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Page <2> V1.029/04/13
Bipolar Transistor
Note:
1. Pulse Test : Pulse Width %300µs, Duty Cycle %2%
Electrical Characteristics: (TA = +25°C Unless otherwise specied)
Parameter Symbol Test Conditions Min. Max. Unit
Collector-Emitter Breakdown Voltage V(BR)CEO lC = 30mA, IB = 0 80
- VCollector-Base Breakdown Voltage V(BR)CBO lC= 100µA. IE = 0 140
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA. lC= 0 7
Collector Cut-Off Current lCBO
VCB = 90V, IE = 0
-
0.01 µA
VCB = 90V, IE= 0, TA = +150°C 10
Emitter Cut-Off Current lEBO VBE = 5V, lc = 0 0.01 A
ON Characteristics
DC Current Gain (Note 1) hFE
VCE = 10V, lC = 0.1mA 50 -
-
VCE = 10V, lC = 10mA 90
VCE = 10V, lC = 150mA 100 300
VCE = 10V, lC = 150mA, TA = -55°C 40
-VCE = 10V, lC = 500mA 50
VCE = 10V, lC = 1A 15
Collector-Emitter Saturation Voltage VCE(sat)
lC = 150mA, IB = 15mA
-
0.2
VlC = 500mA, IB = 50mA 0.5
Base-Emitter Saturation Voltage VBE(sat) lC = 150mA, IB = 15mA 1.1
Small - Signal Characteristics
Current Gain-Bandwidth Product fTVCE = 10V, lC = 50mA, f = 20MHz 100 400 MHz
Output Capacitance Cobo VCB = 10V, lE = 0, f = 1MHz -12 pF
Input Capacitance CIbo VBE = 500mV, lC = 0, f = 1MHz 60
Small-Signal Current Gain hfe VCE = 5V, lC = 1mA, f = 1kHz 80 400 -
Collector-Base Time Constant rb'CcVCB = 10V, IE = 10mA, f = 79.8MHz -ps
Noise Figure NF VCE = 10V, lC- 100µA. f = 1kHz, RS= 1kΩ 4 dB