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Page <1> V1.029/04/13
Bipolar Transistor
Maximum Ratings:
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 140
VCollector-Emitter Voltage VCEO 80
Emitter Base Voltage VEBO 7
Continuous Collector Current IC1 A
Total Device Dissipation -(TA = +25°C),
Derate Above 25°C PD
0.5
2.85 W
mW/°C
Total Device Dissipation -(TA = +25°C),
Derate Above 25°C
1.8
10.6
Operating Junction Temperature Range TJ-65 to +200 °C
Storage Temperature Range, Tstg
Thermal Resistance, Junction-to-Case RthJC 97 °C/W
Thermal Resistance, Junction-to-Ambient RthJA 350
Lead Temperature (During Soldering, 1/16"
from case, 60sec max) TL300 °C
Description:
This is a silicon NPN transistor in a TO-18 type case designed primarily for amplier and
switching applications. The device features high breakdown voltage, Low leakage current,
low capacity, and beta useful over an extremely wide current range.
Pin Conguration:
1. Emitter
2. Base
3. Collector
NPN
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Bipolar Transistor
Note:
1. Pulse Test : Pulse Width %300µs, Duty Cycle %2%
Electrical Characteristics: (TA = +25°C Unless otherwise specied)
Parameter Symbol Test Conditions Min. Max. Unit
Collector-Emitter Breakdown Voltage V(BR)CEO lC = 30mA, IB = 0 80
- VCollector-Base Breakdown Voltage V(BR)CBO lC= 100µA. IE = 0 140
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA. lC= 0 7
Collector Cut-Off Current lCBO
VCB = 90V, IE = 0
-
0.01 µA
VCB = 90V, IE= 0, TA = +150°C 10
Emitter Cut-Off Current lEBO VBE = 5V, lc = 0 0.01 A
ON Characteristics
DC Current Gain (Note 1) hFE
VCE = 10V, lC = 0.1mA 50 -
-
VCE = 10V, lC = 10mA 90
VCE = 10V, lC = 150mA 100 300
VCE = 10V, lC = 150mA, TA = -55°C 40
-VCE = 10V, lC = 500mA 50
VCE = 10V, lC = 1A 15
Collector-Emitter Saturation Voltage VCE(sat)
lC = 150mA, IB = 15mA
-
0.2
VlC = 500mA, IB = 50mA 0.5
Base-Emitter Saturation Voltage VBE(sat) lC = 150mA, IB = 15mA 1.1
Small - Signal Characteristics
Current Gain-Bandwidth Product fTVCE = 10V, lC = 50mA, f = 20MHz 100 400 MHz
Output Capacitance Cobo VCB = 10V, lE = 0, f = 1MHz -12 pF
Input Capacitance CIbo VBE = 500mV, lC = 0, f = 1MHz 60
Small-Signal Current Gain hfe VCE = 5V, lC = 1mA, f = 1kHz 80 400 -
Collector-Base Time Constant rb'CcVCB = 10V, IE = 10mA, f = 79.8MHz -ps
Noise Figure NF VCE = 10V, lC- 100µA. f = 1kHz, RS= 1kΩ 4 dB
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Page <3> V1.029/04/13
Bipolar Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, NPN, 1A, 80V, TO-18 2N3700
Dimensions : Millimetres
Dim A B C D E F G H J K L
Min. 5.24 4.52 4.31 0.4 - - - 0.91 0.71 12.7 45°
Max. 5.84 4.97 5.33 0.53 0.76 1.27 2.97 1.17 1.21 -
Pin Conguration:
1. Emitter
2. Base
3. Collector