UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER Storage Temperature Junction Temperature Total Power Dissipation Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage IC Collector Current SYMBOL VALUE UNIT Ts Tj PD VCBO VCEO VEBO -55 ~ +150 150 65 100 100 5 5 C C W V V V A ELECTRICAL CHARACTERISTICS(Ta=25C) PARAMETER SYMBOL TEST CONDITIONS MIN. Collector-Emitter Breakdown Voltage Collector Cut-Off Current Collector-Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain BVCEO ICBO ICEO IEBO VCE(SAT)1 VCE(SAT)2 VBE(ON) hFE IC=100mA VCB=100V VCE=50V VEB=5V IC=3A, IB=12mA IC=5A, IB=20mA VCE=3V, IC=3A IC=500mA, VCE=3V IC=3A, VCE=3V 100 UTC UNISONIC TECHNOLOGIES TYP. MAX. UNIT 200 500 2 2 4 2.5 V uA uA mA V V V K 1 CO., LTD. 1 QW-R203-006,A UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR SOA SAFE OPERATI NG AREA 10000 10 IC, COLLECTOR CURRENT-(A) C O L L E C T O RC U R R E N T- m A 1000 100 10 1 1 0.1 1 10 100 FORWARD VOLTAGE- - - VCE( V) 1000 10 1 VCEO,COLLECTOR TO EMITTER VOLTAGE-(V) PT=1MS PT=1ms PT=100ms 100 PT=10MS PT=1s VBE(SAT) VS. IC VBE(ON) VS. IC 1000 10000 V BE VBE(ON)-(MV) 1000 1000 100 1000 1000 100 IC , COLLECTOR CURRENT UTC UNISONIC TECHNOLOGIES 10000 1000 IC , COLLECTOR CURRENT CO., LTD. 2 QW-R203-006,A UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR hFE VS. IC VCE(SAT) VS. IC 10000 10000 VCE(SAT)-(MV) hFE, DC CURRENT GAIN 1000 100 1000 10 100 100 1 10 100 1000 10000 1000 1000 IC , COLLECTOR CURRENT ( MA ),IC=250IB IC , COLLECTOR CURRENT 1 2.0 1.8 PD(W) POWER DISSIPATION 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 180 TA AMBIENT TEMPERATURE UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R203-006,A