UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R203-006,A
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC TIP122 is a NPN epitaxial transistor, designed
for use in general purpose amplifier low-speed switching
applications.
TO-220
BCE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL VALUE UNIT
Storage Temperature Ts -55 ~ +150 °C
Junction Temperature Tj 150 °C
Total Power Dissipation PD 65 W
Collector to Base Voltage VCBO 100 V
Collector to Emitter Voltage VCEO 100 V
Emitter to Base Voltage VEBO 5 V
IC Collector Current 5 A
ELECTRICAL CHARACTERISTICS(Ta=25°C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage BVCEO I
C=100mA 100 V
Collector Cut-Off Current ICBO V
CB=100V 200 uA
Collector-Cut-Off Current ICEO V
CE=50V 500 uA
Emitter Cut-Off Current IEBO V
EB=5V 2 mA
Collector-Emitter Saturation Voltage VCE(SAT)1 I
C=3A, IB=12mA 2 V
Collector-Emitter Saturation Voltage VCE(SAT)2 I
C=5A, IB=20mA 4 V
Base-Emitter Saturation Voltage VBE(ON) V
CE=3V, IC=3A 2.5 V
DC Current Gain hFE I
C=500mA, VCE=3V
IC=3A, VCE=3V
1 K
UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R203-006,A
110 100 1000
10
100
1000
1000
0
SAFE OPERATI NG AREA
FORWARD VOLTAGE--- VCE( V)
PT=1ms
PT=100ms
PT=1s
COLLECTORCURRENT-mA
1
1
10 100
0.1
1
10
S O A
VCEO,COLLECTOR TO EMITTER VOLTAGE-(V)
PT=1MS PT=10M
S
IC, COLLECTOR CURRENT-(A)
100 1000 1000
1000
10000
VBE(ON) VS. I C
IC , COLLECTOR CURRENT
VBE(ON)-(MV)
100 1000
10000
1000
1000
VBE(SAT) VS. IC
IC , COLLECTOR CURRENT
V BE
UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 3
QW-R203-006,A
1
10 100 1000 10000
1
10
100
1000
10000
hFE VS. IC
IC , COLLECTOR CURRENT
hFE
,
DC CURRENT GAIN
100 1000 1000
100
1000
10000
VCE(SAT) VS. IC
IC , COLLECTOR CURRENT ( MA ),IC=250IB
VCE(SAT)-(MV)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 20 40 60 80 100 120 140 160 180
PD(W)
POWER DISSIPATION
TA AMBIENT TEMPERATURE
