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NXP Semiconductors
BAP65-02
Silicon PIN diode
Rev. 04 — 8 January 2008 Product data sheet
NXP Semiconductors Product specification
Silicon PIN diode BAP65-02
FEATURES
•High voltage, current controlled
•RF resistor for RF switches
•Low diode capacitance
•Low diode forward resistance (low loss)
•Very low series inductance.
APPLICATIONS
•RF attenuators and switches
•Bandswitch for TV tuners
•Series diode for mobile communication transmit/receive
switch.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small SMD plastic
package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
handbook, halfpage
12
Top view
MAM405
Marking code: K6.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous reverse voltage −30 V
IFcontinuous forward current −100 mA
Ptot total power dissipation Ts≤90 °C−715 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −65 +150 °C
Rev. 04 - 8 January 2008
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NXP Semiconductors Product specification
Silicon PIN diode BAP65-02
ELECTRICAL CHARACTERISTICS
Tj= 25°C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage IF= 50 mA 0.9 1.1 V
IRreverse leakage current VR=20V −20 nA
Cddiode capacitance VR= 0 V; f = 1 MHz 0.65 −pF
VR= 1 V; f = 1 MHz 0.55 0.9 pF
VR= 3 V; f = 1 MHz 0.5 0.8 pF
VR= 20 V; f = 1 MHz 0.375 −pF
rDdiode forward resistance IF= 1 mA; f = 100 MHz 1 −Ω
I
F
= 5 mA; f = 100 MHz; note 1 0.65 0.95 Ω
IF= 10 mA; f = 100 MHz; note 1 0.56 0.9 Ω
IF= 100 mA; f = 100 MHz 0.35 −Ω
|s
21|2isolation VR= 0; f = 900 MHz 10 −dB
VR= 0; f = 1800 MHz 5.8 −dB
VR= 0; f = 2450 MHz 4.4 −dB
|s21|2insertion loss IF= 1 mA; f = 900 MHz 0.11 −dB
IF= 1 mA; f = 1800 MHz 0.13 −dB
IF= 1 mA; f = 2450 MHz 0.16 −dB
|s21|2insertion loss IF= 5 mA; f = 900 MHz 0.08 −dB
IF= 5 mA; f = 1800 MHz 0.11 −dB
IF= 5 mA; f = 2450 MHz 0.13 −dB
|s21|2insertion loss IF= 10 mA; f = 900 MHz 0.07 −dB
IF= 10 mA; f = 1800 MHz 0.1 −dB
IF= 10 mA; f = 2450 MHz 0.13 −dB
|s21|2insertion loss IF= 100 mA; f = 900 MHz 0.07 −dB
IF= 100 mA; f = 1800 MHz 0.1 −dB
IF= 100 mA; f = 2450 MHz 0.128 −dB
τLcharge carrier life time whenswitchedfrom IF=10mAto
I
R= 6 mA; RL= 100 Ω;
measured at IR=3mA
0.17 −µs
L
Sseries inductance IF= 100 mA; f = 100 MHz 0.6 −nH
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 85 K/W
Rev. 04 - 8 January 2008
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NXP Semiconductors Product specification
Silicon PIN diode BAP65-02
GRAPHICAL DATA
handbook, halfpage
10
1
10−1
MLD499
10−11IF (mA)
rD
(Ω)
10 102
Fig.2 Forward resistance as a function of forward
current; typical values.
f = 100 MHz; Tj=25°C.
handbook, halfpage
020
1000
0
200
400
600
800
4
Cd
(fF)
VR (V)
81216
MLD500
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
0 1000
(1) (2) (3) (4)
(5)
2000 f (MHz) 3000
0
−0.5
−0.1
−0.2
−0.3
−0.4
MLD501
s21 2
(dB)
Fig.4 Insertion loss (|s21|2) of the diode as a
function of frequency; typical values.
Diodeinsertedinserieswitha50 Ωstriplinecircuitandbiased
via the analyzer Tee network. Tamb =25°C.
(1) IF= 0.5 mA.
(2) IF= 1 mA.
(3) IF= 5 mA.
(4) IF=10mA.
(5) IF= 100 mA.
handbook, halfpage
0 1000 2000 f (MHz) 3000
0
−10
−30
−40
−20
MLD502
s21 2
(dB)
Fig.5 Isolation (|s21|2) of the diode as a function of
frequency; typical values.
Diode zero biased and inserted in series with a 50 Ωstripline circuit.
Tamb =25°C.
Rev. 04 - 8 January 2008
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NXP Semiconductors Product specification
Silicon PIN diode BAP65-02
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD523 SC-79 02-12-13
06-03-16
Plastic surface-mounted package; 2 leads SOD523
0 0.5 1 mm
scale
D
12
HE
Ebp
A
c
vMA
A
UNIT bpcDEv
mm
AH
E
DIMENSIONS (mm are the original dimensions)
Note
1. The marking bar indicates the cathode.
(1) 0.34
0.26 0.17
0.11 0.1
0.85
0.75
1.25
1.15
0.65
0.58 1.65
1.55
Rev. 04 - 8 January 2008
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NXP Semiconductors BAP65-02
Silicon PIN diode
Legal information
Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
Rev. 04 - 8 January 2008
6 of 7
NXP Semiconductors BAP65-02
Silicon PIN diode
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 January 2008
Document identifier: BAP65-02_N_4
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
Revision history
Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAP65-02_N_4 20080108 Product data sheet - BAP65-02_3
Modifications: •Package outline drawing on page 5 changed
BAP65-02_3
(9397 750 08364) 20010511 Product specification - BAP65-02_2
BAP65-02_2
(9397 750 08237) 20010507 Product specification - BAP65-02_1
BAP65-02_1
(9397 750 07724) 20001220 Product specification - -
