PROFET(R) BTS 412B2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation * Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * CMOS diagnostic output * Open load detection in OFF-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 65 V 4.7 ... 42 V 220 m 1.8 A 5 A TO-220AB/5 5 5 5 1 Straight leads Standard 1 SMD Application * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. + V bb Voltage Overvoltage Current Gate source protection limit protection 3 V Logic 2 Voltage Charge pump sensor Level shifter Limit for unclamped ind. loads Rectifier IN OUT 5 Temperature sensor Open load ESD 4 Logic Load detection ST Short circuit detection GND PROFET 1 Signal GND 1) Load GND With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Semiconductor Group 1 03.97 BTS 412B2 Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT (Load, L) O Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 0.5 , RL= 6.6 , td= 400 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. IL = 1.8 A, ZL = 2.3 H, 0 : Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: Symbol Vbb VLoad dump4) IL Tj Tstg Ptot EAS VESD Values 65 100 Unit V V self-limited -40 ...+150 -55 ...+150 50 A C 4.5 1 2 J kV -10 ... +16 5.0 5.0 V mA Values typ max -2.5 -75 35 -- Unit W acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 VIN IIN IST Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 Thermal Characteristics Parameter and Conditions Thermal resistance 2) 3) 4) 5) Symbol chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5): min ---- K/W Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 BTS 412B2 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 1.6 A Tj=25 C: Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 Turn-on time IN to 90% VOUT: to 10% VOUT: Turn-off time IN RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Operating Parameters Operating voltage 6) Undervoltage shutdown Tj =-40...+150C: Tj =25C: Tj =-40...+150C: Tj =-40...+150C: Undervoltage restart Undervoltage restart of charge pump see diagram page 12 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150C: Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: Overvoltage protection7) Ibb=40 mA Standby current (pin 3), VIN=0, IST0 Tj=-40...+150C: 8) Operating current (Pin 1) , VIN=5 V 6) 7) 8) RON -- 190 220 390 440 IL(ISO) IL(GNDhigh) 1.6 -- 1.8 -- -1 A mA ton toff 15 5 --- 125 85 s dV /dton -- -- 3 V/s -dV/dtoff -- -- 6 V/s Vbb(on) Vbb(under) 4.7 2.9 2.7 --- ----5.6 42 4.5 4.7 4.9 6.0 V V Vbb(under) -- 0.1 -- V Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) 42 40 -65 --0.1 70 52 ---- V V V V Vbb(u rst) Vbb(ucp) IGND 3 V V A Ibb(off) --- 40 1 70 -- At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group m mA BTS 412B2 Parameter and Conditions Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Protection Functions Initial peak short circuit current limit (pin 3 to 5)9), IL(SCp) ( max 450 s if VON > VON(SC) ) Tj =-40C: Tj =25C: Tj =+150C: Overload shutdown current limit IL(SCr) VON= 8 V, Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC) Values min typ max 9 -4 -12 -- 23 -15 A -- 5 -- A -- -- 450 s VON(CL) 61 -- 68 -- 73 75 V VON(SC) Tjt Tjt -Vbb -150 --- 8.5 -10 -- ---32 V C K V 15 30 60 A 2 3 4 V min value valid only, if input "low" time exceeds 60 s Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150C: IL= 1 A, Tj =-40..+150C: Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 10) Diagnostic Characteristics Open load detection current (included in standby current Ibb(off)) Open load detection voltage 9) 10) Unit Tj=-40...+150C: IL(off) Tj=-40..150C: VOUT(OL) Short circuit current limit for max. duration of td(SC) max=450 s, prior to shutdown Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). Semiconductor Group 4 BTS 412B2 Parameter and Conditions Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Input and Status Feedback11) Input resistance see circuit page 6 Input turn-on threshold voltage Tj =-40..+150C: Tj =-40..+150C: Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 3.5 V Delay time for status with open load RI Values min typ max Unit -- 9 -- k VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST OL3) 1.5 1.0 -1 10 -- --0.5 -25 200 2.4 --30 70 -- V V V A A s td(ST SC) -- -- 450 s 4.4 ---- 5.1 ---- 6.5 0.4 0.25 1.6 V after Input neg. slope (see diagram page 11) Status invalid after positive input slope Tj=-40 ... +150C: (short circuit) Status output (CMOS) Tj =-40...+150C, IST= - 50 A: Tj =-40...+150C, IST = +1.6 mA: Max. status current for current source (out): valid status output, current sink (in) : Tj =-40...+150C 11) VST(high)12) VST(low) -IST +IST13) If a ground resistor RGND is used, add the voltage drop across this resistor. VSt high Vbb during undervoltage shutdown 13) No current sink capability during undervoltage shutdown 12) Semiconductor Group 5 mA BTS 412B2 Truth Table Input- Output level level 412 B2 410 D2 410 E2/F2 410 G2 410 H2 L H L H L H L H L H L H L H L H H H L H H L L H L L L16) L16) L L H H H L H L H H (L15)) L L L16) L16) L L H H H L H L H H (L15)) L L H H H H H H H L H H H H (L15)) L L H H H H H H L H H L L H L L H H H H Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level Status 14) H L L H H L L L L L L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11...12) Terms Status output Ibb I IN 2 IL V IN VST OUT PROFET 4 Logic Vbb IN I ST V V 3 ST VON 5 ST GND 1 bb R GND IGND VOUT ESDZD Zener diode: 6 V typ., max 5.0 mA, VLogic 5 V typ, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). GND Input circuit (ESD protection) Short circuit detection Fault Condition: VON > 8.5 V typ.; IN high R IN I + V bb ESD-ZD I I I V ON GND OUT ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). 14) Logic unit Short circuit detection Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for open load detection. 15) Low resistance short V to output may be detected in ON-state by the no-load-detection bb 16) No current sink capability during undervoltage shutdown Semiconductor Group 6 BTS 412B2 GND disconnect Inductive and overvoltage output clamp + V bb V 3 Z 2 IN VON PROFET 4 OUT PROFET GND Vbb V VON clamped to 68 V typ. V bb IN V OUT 5 ST GND 1 ST V GND Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. Overvolt. and reverse batt. protection GND disconnect with GND pull up + Vbb V R IN IN RI 3 Z2 2 IN Vbb Logic PROFET R ST OUT ST V 4 GND PROFET Z1 5 ST 1 GND R GND V V bb V IN ST V GND Signal GND VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 , RST= 15 k, RI= 9 k typ. Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load Open-load detection OFF-state diagnostic condition: VOUT > 3 V typ.; IN low 3 high 2 IN Vbb PROFET 4 OFF I Logic unit 5 ST GND 1 L(OL) Open load detection OUT V V bb OUT Normal load current can be handled by the PROFET itself. Signal GND Semiconductor Group 7 BTS 412B2 Vbb disconnect with charged external inductive load high 2 L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0 S 3 IN Vbb L [mH] 10000 OUT PROFET 4 Maximum allowable load inductance for a single switch off 5 D ST GND 1000 1 V bb If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. 100 Inductive Load switch-off energy dissipation E bb 10 E AS IN ELoad V bb 1 PROFET = 1 OUT ST ZL { 4 5 6 Typ. transient thermal impedance chip case ZthJC = f(tp, D), D=tp/T L RL 3 IL [A] EL GND 2 ER ZthJC [K/W] 10 Energy stored in load inductance: 2 EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is 1 EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : IL* L IL*RL *(V + |VOUT(CL)|)* ln (1+ EAS= ) |VOUT(CL)| 2*RL bb D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.1 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Semiconductor Group 8 BTS 412B2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150 in GND connection, protection against loss of ground Type Logic version BTS 412 B2 410D2 410E2 410G2 410H2 Overtemperature protection with hysteresis Tj >150 C, latch function17)18) Tj >150 C, with auto-restart on cooling Short circuit to GND protection B D X X E G X X X X X X X 308 H X switches off when VON>3.5 V typ. and Vbb> 8 V typ17) (when first turned on after approx. 210 s) switches off when VON>8.5 V typ.17) (when first turned on after approx. 210 s) 307 X X X Achieved through overtemperature protection X Open load detection in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X X X X X X X X X X X X X X X X X X X - X overtemperature X X X X X X X short circuit to GND X X X - X X X short to Vbb X -20) -20) -20) X X X open load X X X X X X X undervoltage X X - - - X - overvoltage X X - - - - - X X X X X X X X X X X X X X X X X X X Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart19) Status feedback for Status output type CMOS Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X Load current limit high level (can handle loads with high inrush currents) low level (better protection of application) Protection against loss of GND X 17) X X Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 18) With latch function. Reseted by a) Input low, b) Undervoltage 19) No auto restart after overvoltage in case of short circuit 20) Low resistance short V to output may be detected in ON-state by the no-load-detection bb Semiconductor Group 9 BTS 412B2 Timing diagrams Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN IN t d(bb IN) V bb ST V OUT V OUT A ST CMOS I L t A t in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s Figure 3a: Turn on into short circuit, Figure 2a: Switching a lamp, IN IN ST ST VOUT V OUT td(SC) I I L L t t td(SC) approx. -- s if Vbb - VOUT > 8.5 V typ. Semiconductor Group 10 BTS 412B2 Figure 3b: Turn on into overload, Figure 4a: Overtemperature, Reset if (IN=low) and (Tj<Tjt) IN IN IL I L(SCp) ST I L(SCr) V OUT ST T J t t Heating up may require several seconds, Vbb - VOUT < 8.5 V typ. *) ST goes high , when VIN=low and Tj<Tjt Figure 3c: Short circuit while on: Figure 5a: Open load: detection in OFF-state, turn on/off to open load IN IN ST t ST d(ST OL3) V OUT VOUT IL **) I L open normal t *) **) current peak approx. 20 s t in case of external capacity td(ST,OL3) may be higher due to high impedance *) IL = 30 A typ Semiconductor Group 11 BTS 412B2 Figure 5b: Open load: detection in OFF-state, open load occurs in off-state Figure 6b: Undervoltage restart of charge pump VON(CL) V on IN V bb(over) off-state V on-state off-state ST OUT V V bb(u rst) I L normal load open load V normal load *) *) bb(o rst) bb(u cp) V bb(under) V bb t charge pump starts at Vbb(ucp) =5.6 V typ. *) IL = 30 A typ Figure 7a: Overvoltage: Figure 6a: Undervoltage: IN IN Vbb VON(CL) V bb(over) V bb(o rst) V bb V bb(under) Vbb(u cp) Vbb(u rst) V OUT V OUT ST ST CMOS t if Vbb > Vbb(AZ) increase of VST due to GND resistor voltage. t Semiconductor Group 12 BTS 412B2 Figure 9a: Overvoltage at short circuit shutdown: IN Vbb V bb(o rst) Output short to GND V OUT short circuit shutdown I L ST t Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown. Semiconductor Group 13 BTS 412B2 SMD TO-220AB/5, Opt. E3062 Ordering code Package and Ordering Code BTS 412B2 E3062A T&R: All dimensions in mm Standard TO-220AB/5 BTS 412B2 Ordering code Q67060-S6109-A2 TO-220AB/5, Option E3043 Ordering code BTS 412B2 E3043 Semiconductor Group Q67060-S6109-A3 14 Q67060-S6109-A4