R07DS1049EJ0300 Rev.3.00 Page 1 of 6
Apr 09, 2013
Preliminary Datasheet
RJK0454DPB
40V, 40A, 4.9m max.
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Low drive current
Low on-resistance
RDS(on) = 3.9 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
High densit y mounting
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
G
D
SSS
4
123
5
1, 2, 3 Source
4 Gate
5 Drain
1234
5
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 40 V
Gate to source voltage VGSS 20 V
Drain current ID 40 A
Drain peak current ID(pulse)Note1 160 A
Body-drain diode reverse drain current IDR 40 A
Avalanche current IAP Note 2 40 A
Avalanche energy EAS Note 2 13 mJ
Channel dissipation Pch Note3 55 W
Channel to Case Thermal Resistance ch-C 2.27 C/W
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L=10uH, Tch = 25 C, Rg 50
3. Tc = 25C
R07DS1049EJ0300
(Previous: REJ03G1877-0200)
Rev.3.00
Apr 09, 2013
RJK0454DPB Preliminary
R07DS1049EJ0300 Rev.3.00 Page 2 of 6
Apr 09, 2013
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 40 — — V ID = 10 mA, VGS = 0 V
Gate to source leak current IGSS — — 0.1 A VGS = 20 V, VDS = 0 V
Zero gate voltage drain current IDSS — — 1 A VDS = 40 V, VGS = 0 V
Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V VDS = 10 V, ID = 1 mA
Static drain to source on state resistance RDS(on) — 3.9 4.9 m I
D = 20 A, VGS = 10 V Note4
Forward transfer admittance |yfs| — 40 — S ID = 20 A, VDS = 10 V Note4
Input capacitance Ciss — 2000 — pF
Output capacitance Coss — 620 — pF
Reverse transfer capacitance Crss — 150 — pF
VDS = 10 V, VGS = 0 V,
f = 1 MHz
Gate Resistance Rg — 0.5 —
Total gate charge Qg — 25 — nC
Gate to source charge Qgs — 9.0 — nC
Gate to drain charge Qgd — 3.0 — nC
VDD = 10 V, VGS = 10 V,
ID = 40 A
Turn-on delay time td(on) — 10 — ns
Rise time tr — 5.2 — ns
Turn-off delay time td(off) — 30 — ns
Fall time tf — 6.5 — ns
VGS = 10 V, ID = 20 A,
VDD 10 V, RL = 0.5 ,
Rg = 4.7
Body–drain diode forward voltage VDF — 0.8 1.1 V IF = 40 A, VGS = 0 V Note4
Body–drain diode reverse recovery time trr — 37 — ns
IF = 40 A, VGS = 0 V
diF/ dt = 100 A/ s
Notes: 4. Pulse test
RJK0454DPB Preliminary
R07DS1049EJ0300 Rev.3.00 Page 3 of 6
Apr 09, 2013
Main Characteristics
0.1 1 10 100
10
100
1000
1
0.1
Drain to Source Voltage VDS (V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Typical Output Characteristics
Drain Current ID (A)
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
VDS (on) (mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
50
40
30
20
10
0246810
50
40
30
20
10
012 34 5
Tc = 75°C
25°C
–25°C
80
60
40
20
050 100 150 200
V
DS
= 10 V
Pulse Test
V
GS
= 3.6 V
10
1
1 10 100 1000
200
160
120
80
40
04 8 12 16 20
Pulse Test
I
D
= 20 A
10 A
100
V
GS
= 10 V
4.2 V
4.6 V
10 V
Pulse Test
PW = 10 ms
DC Operation
1 ms
Operation in
this area is
limited by R
DS(on)
Tc = 25°C
1 shot Pulse
5 A
4.4 V
Pulse Test
3.8 V
4.8 V
4.0 V
RJK0454DPB Preliminary
R07DS1049EJ0300 Rev.3.00 Page 4 of 6
Apr 09, 2013
Case Temperature Tc (
°
C)
Static Drain to Source on State Resistance
vs. Temperature
10
8
6
4
2
–25 0 25 50 75 100 125 150
0
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch ( °C)
Avalanche Energy EAS (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
16
12
8
4
25 50 75 100 125 150
0
50
40
30
20
10
00.4 0.8 1.2 1.6 2.0
Pulse Test
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
010 4020
10000
1000
100
10
V
GS
= 0 V
f = 1 MHz
Crss
Coss
Ciss
Gate Charge Qg (nC)
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
30
40
50
20
10
0
20
16
12
8
4
10 20 30 40 50
00
I
D
= 40 A V
GS
V
DS
V
GS
= 10 V
V
GS
= 0 V
10 V
30
Pulse Test
I
D
= 20 A
V
DD
= 25 V
10 V
V
DD
= 25 V
10 V
I
AP
= 40 A
V
DD
= 15 V
duty < 0.1 %
Rg ≥ 50 Ω
RJK0454DPB Preliminary
R07DS1049EJ0300 Rev.3.00 Page 5 of 6
Apr 09, 2013
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AS
= L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
Avalanche Test Circuit Avalanche Waveform
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DS
= 10 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor 90%
10%
tf
Switching Time Test Circuit Switching Time Waveform
Rg
3
1
0.3
0.1
0.03
0.01
1 m 10 m 100 m 1 10
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Tc = 25°C
P
DM
PW
T
D = PW
T
RJK0454DPB Preliminary
R07DS1049EJ0300 Rev.3.00 Page 6 of 6
Apr 09, 2013
Package Dimensions
0.25
M
1.3 Max
1.0
3.95
1.1 Max
4.9
5.3 Max
4.0 ± 0.2
14
5
4.2
3.3
0° – 8°
0.07
+0.03
–0.04
0.20
+0.05
–0.03
0.6
+0.25
–0.20
0.25
+0.05
–0.03
6.1
+0.1
–0.3
Previous Code
PTZZ0005DA-ALFPAKV
MASS[Typ.]
0.080gSC-100
RENESAS CodeJEITA Package Code
1.27
0.40 ± 0.06
0.75 Max
0.10
(Ni/Pd/Au plating)
Unit: mm
Package Name
LFPAK
Ordering Information
Part No. Quantity Shipping Container
RJK0454DPB-00-J5 2500 pcs Taping
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