AFT18HW355SR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications requiring very wide instantaneous
bandwidth capability covering the frequency range of 1805 to 1880 MHz.
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQA = 1100 mA, VGSB =1.45Vdc,P
out = 63 Watts Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz 14.8 48.1 7.3 --27.2 -- 1 3
1840 MHz 15.3 48.9 7.4 --27.7 -- 1 2
1880 MHz 15.2 48.3 7.5 --29.2 -- 9
Features
Advanced High Performance In--Package Doherty
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
For R5 Tape and Reel option, see p. 15.
Document Number: AFT18HW355S
Rev. 1, 1/2013
Freescale Semiconductor
Technical Data
1805--1880 MHz, 63 W AVG., 28 V
AFT18HW355SR6
NI--1230S--4
(Top View)
RFoutA/VDSA
31
Figure 1. Pin Connections
42
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Carrier
Peaking
1. Pin connections 1 and 2 are DC coupled
and RF independent.
(1)
Freescale Semiconductor, Inc., 2013.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT18HW355SR6
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature Range TC--40 to +125 C
Operating Junction Temperature Range (1,2) TJ--40 to +225 C
CW Operation @ TC=25C
Derate above 25C
CW 259
0.64
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 77C, 63 W CW, 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc, 1840 MHz
Case Temperature 106C, 225 W CW(4),28Vdc,I
DQA = 1100 mA, VGSB = 1.45 Vdc, 1840 MHz
RJC
0.47
0.30
C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (5)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 5 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics -- Side A (5) (Carrier)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 146 Adc)
VGS(th) 1.6 2.1 2.6 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
DA = 1100 mAdc, Measured in Functional Test)
VGS(Q) 2.4 2.9 3.4 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.5Adc)
VDS(on) 0.1 0.2 0.3 Vdc
On Characteristics -- Side B (5) (Peaking)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 291 Adc)
VGS(th) 1.6 2.1 2.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2.9Adc)
VDS(on) 0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
5. Each side of device measured separately.
(continued)
AFT18HW355SR6
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1,2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 1100 mA, VGSB =1.45Vdc,P
out =63WAvg.,
f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 14.2 15.2 17.0 dB
Drain Efficiency D45.0 48.3 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.1 7.5 —dB
Adjacent Channel Power Ratio ACPR —--29.2 --26.0 dBc
Input Return Loss IRL — -- 9 -- 8 dB
Load Mismatch (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 1100 mA, VGSB = 1.45 Vdc, f1 = 1795 MHz, f2 = 1895 MHz,
2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. PAR = 9.9 dB @ 0.01% Probability on CCDF.
VSWR 10:1 at 32 Vdc, 252 W W--CDMA Output Power No Device Degradation
Typical Performances (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 1100 mA, VGSB =1.45Vdc,
1805--1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —350 (4,5) — W
Pout @ 3 dB Compression Point (6) P3dB —400 — W
AM/PM
(Maximum value measured at the P3dB compression point across the
1805--1880 MHz frequency range)
—22 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —150 —MHz
Gain Flatness in 75 MHz Bandwidth @ Pout =63WAvg. GF—0.63 —dB
Gain Variation over Temperature
(--30Cto+85C)
G — 0.01 —dB/C
Output Power Variation over Temperature
(--30Cto+85C) (5)
P1dB —0.013 —dB/C
1. Part internally matched both on input and output.
2. VDDA and VDDB must be tied together and powered by a single DC power supply.
3. Measurement made with device in an asymmetrical Doherty configuration.
4. Calculated from load pull P3dB measurements.
5. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
6. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4
RF Device Data
Freescale Semiconductor, Inc.
AFT18HW355SR6
Figure 2. AFT18HW355SR6 Test Circuit Component Layout
AFT18HW355S
Rev. 3
CUT OUT AREA
C5
C3
R1
C1
C2
R3
C4
C6
R2
C12
C14
C10
C16
C8
C7
C9
C11
C13 C15
C
P
VDDA
VDDB
VGGA
VGGB
Note 1: VDDA and VDDB must be tied together and powered by a single DC power supply.
Table 5. AFT18HW355SR6 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C3, C4, C7, C9, C10 18 pF Chip Capacitors GQM2195C2A180JB12D Murata
C5, C6 2.2 F Chip Capacitors C1206C225K4RAC Kemet
C8 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC
C11, C12 2.2 F Chip Capacitors C1825C225K5RAC Kemet
C13, C14 22 F Chip Capacitors C5750Y5V1H226Z TDK
C15, C16 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay
R3 50 , 10 W Chip Resistor 81A7031--50--5F Florida RF Labs
PCB 0.020,r=3.5 RO4350B Rogers
AFT18HW355SR6
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
1760
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 63 Watts Avg.
-- 1 2
-- 4
-- 6
-- 8
-- 1 0
12
17
16.5
16
-- 3 2
50
49
48
47
-- 2 7
-- 2 8
-- 2 9
-- 3 0
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
15.5
15
14.5
14
13.5
13
12.5
1780 1800 1820 1840 1860 1880 1900 1920
46
-- 3 1
-- 1 4
ACPR (dBc)
PARC
VDD =28Vdc,P
out =63W(Avg.)
IDQA = 1100 mA, VGSB =1.45Vdc
Single--Carrier W--CDMA
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 7 0
-- 2 0
-- 3 0
-- 4 0
-- 6 0
1 200
IMD, INTERMODULATION DISTORTION (dBc)
-- 5 0
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
VDD =28Vdc,P
out = 53 W (PEP), IDQA = 1100 mA
VGSB = 1.45 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
1
-- 1
-- 3
25
2
0
-- 2
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
10 40 55 85
0
60
50
40
30
20
10
DDRAIN EFFICIENCY (%)
-- 3 d B = 7 1 W
70
D
ACPR
PARC
ACPR (dBc)
-- 4 5
-- 1 5
-- 2 0
-- 2 5
-- 3 5
-- 3 0
-- 4 0
17
Gps, POWER GAIN (dB)
16.5
16
15.5
15
14.5
14
Gps
-- 1 d B = 1 5 W
-- 2 d B = 4 2 W
IRL
PARC (dB)
-- 3
-- 2 . 2
-- 2 . 4
-- 2 . 6
-- 2 . 8
-- 3 . 2
-- 4
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
100
VDD =28Vdc,I
DQA = 1100 mA
VGSB = 1.45 Vdc, f = 1840 MHz
Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
6
RF Device Data
Freescale Semiconductor, Inc.
AFT18HW355SR6
TYPICAL CHARACTERISTICS
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 2 0
-- 3 0
12
18
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
17
16
10 100 300
10
-- 7 0
ACPR (dBc)
15
14
13
-- 1 0
-- 4 0
-- 5 0
-- 6 0
1805 MHz
Figure 7. Broadband Frequency Response
9
21
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 1100 mA
VGSB =1.45Vdc
17
15
13
GAIN (dB)
19
11
1700 1750 1800 1850 1900 1950 2000 2050 2100
-- 1 5
15
10
5
0
-- 5
IRL (dB)
-- 1 0
Gain
IRL
1840 MHz
1880 MHz
1805 MHz
1880 MHz 3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
Gps
1840 MHz
VDD =28Vdc,I
DQA = 1100 mA
VGSB = 1.45 Vdc, Single--Carrier W--CDMA
1880 MHz
1840 MHz
1805 MHz
AFT18HW355SR6
7
RF Device Data
Freescale Semiconductor, Inc.
VDD =28Vdc,I
DQA = 1100 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Max
Linear
Gain (dB)
Max Output Power
P1dB P3dB
(dBm) (W)
D
(%)
AM/PM
()(dBm) (W)
D
(%)
AM/PM
()
1805 1.14 - j4.15 1.12 + j4.37 1.21 - j4.03 18.3 51.8 151 58.1 9.2 52.7 186 60.0 15
1840 1.14 - j4.41 1.32 + j4.55 1.24 - j4.24 18.4 51.6 145 57.4 9.1 52.6 182 59.4 16
1880 1.54 - j4.56 1.61 + j4.79 1.23 - j4.39 18.2 51.7 148 56.6 9.2 52.6 182 58.3 15
(1) Load impedance for optimum P1dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
Figure 8. Carrier Side Load Pull Performance — Maximum P1dB Tuning
VDD =28Vdc,I
DQA = 1100 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Max
Linear
Gain (dB)
Max Drain Efficiency
P1dB P3dB
(dBm) (W)
D
(%)
AM/PM
()(dBm) (W)
D
(%)
AM/PM
()
1805 1.14 - j4.15 1.08 + j4.44 2.56 - j3.08 21.1 49.9 98 69.8 15 50.6 115 71.8 24
1840 1.14 - j4.41 1.25 + j4.64 2.54 - j2.75 21.6 49.3 85 68.9 16 50.6 115 71.2 26
1880 1.54 - j4.56 1.53 + j4.87 2.30 - j3.10 21.3 49.6 91 68.1 16 50.6 115 70.1 26
(1) Load impedance for optimum P1dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
Figure 9. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
8
RF Device Data
Freescale Semiconductor, Inc.
AFT18HW355SR6
VDD =28Vdc,V
GSB =1.7Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Max
Linear
Gain (dB)
Max Output Power
P1dB P3dB
(dBm) (W)
D
(%)
AM/PM
()(dBm) (W)
D
(%)
AM/PM
()
1805 0.88 - j3.59 0.97 + j3.83 1.35 - j4.28 15.1 54.8 302 57.0 29 54.9 309 64.7 39
1840 1.07 - j3.87 1.25 + j4.16 1.37 - j4.53 15.0 54.7 295 55.3 29 55.2 331 61.4 38
1880 1.66 - j4.15 1.80 + j4.58 1.56 - j4.77 15.1 54.6 288 55.6 28 55.3 339 58.8 36
(1) Load impedance for optimum P1dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
Figure 10. Peaking Side Load Pull Performance — Maximum P1dB Tuning
VDD =28Vdc,V
GSB =1.7Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Max
Linear
Gain (dB)
Max Drain Efficiency
P1dB P3dB
(dBm) (W)
D
(%)
AM/PM
()(dBm) (W)
D
(%)
AM/PM
()
1805 0.88 - j3.59 0.86 + j3.78 2.24 - j2.33 16.7 52.4 174 72.4 36 53.2 209 72.0 45
1840 1.07 - j3.87 1.10 + j4.10 2.05 - j2.42 16.8 52.3 170 71.6 37 53.2 209 71.0 46
1880 1.66 - j4.15 1.59 + j4.49 2.08 - j2.52 16.6 52.1 162 70.4 36 53.1 204 70.0 44
(1) Load impedance for optimum P1dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
Figure 11. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
AFT18HW355SR6
9
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
-- 6
REAL ()
-- 1 . 5
-- 2 . 5
IMAGINARY ()
1.5 22.50.5 4
-- 2
-- 3
-- 3 . 5
-- 4
-- 4 . 5
33.5
-- 5
-- 5 . 5
1
-- 2 2
-- 1 4
-- 6
-- 1 6
-- 2 0
-- 1 0
-- 8
-- 1 2
P
E
-- 6
REAL ()
-- 1 . 5
-- 2 . 5
IMAGINARY ()
1.5 22.50.5 4
-- 2
-- 3
-- 3 . 5
-- 4
-- 4 . 5
33.5
-- 5
-- 5 . 5
1
20.5
21
18.5
P
E
20
19
18
19.5
-- 6
REAL ()
-- 1 . 5
-- 2 . 5
IMAGINARY ()
1.5 22.50.5 4
-- 2
-- 3
-- 3 . 5
-- 4
-- 4 . 5
33.5
-- 5
-- 5 . 5
1
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
-- 6
REAL ()
-- 1 . 5
-- 2 . 5
IMAGINARY ()
1.5 22.50.5 4
-- 2
-- 3
-- 3 . 5
-- 4
-- 4 . 5
33.5
-- 5
-- 5 . 5
1
P
48.5 47.5
48
49
47.5
E
48
50.5
50
49.5
51.5
P
E
49
Figure 12. P1dB Load Pull Output Power Contours (dBm) Figure 13. P1dB Load Pull Efficiency Contours (%)
Figure 14. P1dB Load Pull Gain Contours (dB) Figure 15. P1dB Load Pull AM/PM Contours ()
Power Gain
Drain Efficiency
Linearity
Output Power
51
68
66
64
62
60
58
56
54
52
17.5
-- 1 8
17
10
RF Device Data
Freescale Semiconductor, Inc.
AFT18HW355SR6
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
18.5
19
18
17
17.5
16
15 16.5
15.5
-- 6
-- 1 . 5
-- 2 . 5
IMAGINARY ()
1.5 22.50.5 4
-- 2
-- 3
-- 3 . 5
-- 4
-- 4 . 5
33.5
-- 5
-- 5 . 5
1
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Figure 16. P3dB Load Pull Output Power Contours (dBm)
-- 6
REAL ()
-- 1 . 5
-- 2 . 5
IMAGINARY ()
1.5 22.50.5 4
-- 2
-- 3
-- 3 . 5
-- 4
-- 4 . 5
33.5
-- 5
-- 5 . 5
1
Figure 17. P3dB Load Pull Efficiency Contours (%)
-- 6
REAL ()
-- 1 . 5
-- 2 . 5
IMAGINARY ()
1.5 22.50.5 4
-- 2
-- 3
-- 3 . 5
-- 4
-- 4 . 5
33.5
-- 5
-- 5 . 5
1
-- 6
-- 1 . 5
-- 2 . 5
IMAGINARY ()
1.5 22.50.5 4
-- 2
-- 3
-- 3 . 5
-- 4
-- 4 . 5
33.5
-- 5
-- 5 . 5
1
P
48.5
49
E
51
50.5
50 49.5
51.5
50.5
52
52.5
P
E
P
E
66
68
7070
66
64
62
60
58
56
54
Figure 18. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 19. P3dB Load Pull AM/PM Contours ()
REAL ()
-- 2 2
-- 1 6
-- 2 0
-- 1 8
P
E
-- 2 4
-- 2 6
Power Gain
Drain Efficiency
Linearity
Output Power
-- 2 8
-- 3 0
-- 3 2
AFT18HW355SR6
11
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
-- 4 0 -- 3 8
-- 2 4
-- 7
-- 1
REAL ()
-- 3
-- 4
-- 6
IMAGINARY ()
-- 2
1 1.5 2 2.50.5 5
-- 5
33.544.5
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
-- 7
-- 1
REAL ()
-- 3
-- 4
-- 6
IMAGINARY ()
-- 2
1 1.5 2 2.50.5 5
-- 5
33.544.5
-- 7
-- 1
REAL ()
-- 3
-- 4
-- 6
IMAGINARY ()
-- 2
1 1.5 2 2.50.5 5
-- 5
11.5
14
13
12.5
12
13.5
33.544.5
-- 7
-- 1
REAL ()
-- 3
-- 4
-- 6
IMAGINARY ()
-- 2
1 1.5 2 2.50.5 5
-- 5
3 3.5 4 4.5
Figure 20. P1dB Load Pull Output Power Contours (dBm) Figure 21. P1dB Load Pull Efficiency Contours (%)
Figure 22. P1dB Load Pull Gain Contours (dB) Figure 23. P1dB Load Pull AM/PM Contours ()
P
E
P
E
53
53.5 52.5
54
54.5
52.5
52
68
66
70 64
62 60
58
56
54
14.5
15
15.5
P
E
-- 3 0
-- 2 8-- 2 8
-- 3 6
Power Gain
Drain Efficiency
Linearity
Output Power
P
E
51
51.5
52
52.5
-- 2 6
-- 3 2
-- 3 4
50.5
12
RF Device Data
Freescale Semiconductor, Inc.
AFT18HW355SR6
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
-- 7
-- 1
REAL ()
-- 3
-- 4
-- 6
IMAGINARY ()
-- 2
1 1.5 2 2.50.5 5
-- 5
33.544.5
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
-- 7
-- 1
REAL ()
-- 3
-- 4
-- 6
IMAGINARY ()
-- 2
1 1.5 2 2.50.5 5
-- 5
33.544.5
-- 7
-- 1
REAL ()
-- 3
-- 4
-- 6
IMAGINARY ()
-- 2
1 1.5 2 2.50.5 5
-- 5
11.5
33.544.5
-- 7
-- 1
REAL ()
-- 3
-- 4
-- 6
IMAGINARY ()
-- 2
1 1.5 2 2.50.5 5
-- 5
3 3.5 4 4.5
Figure 24. P3dB Load Pull Output Power Contours (dBm) Figure 25. P3dB Load Pull Efficiency Contours (%)
Figure 26. P3dB Load Pull Gain Contours (dB) Figure 27. P3dB Load Pull AM/PM Contours ()
13
13.5
P
E
51.5 52
53
53.5
54
54.5
51
52.5
55
68 66
70
64
62
60
58
56
54
P
E
58
12
11
10.5
10
P
E
P
E
-- 5 0 -- 4 8 -- 3 4
-- 3 6
-- 4 4
-- 4 2
-- 4 0
-- 3 8
-- 4 6
Power Gain
Drain Efficiency
Linearity
Output Power
12.5
AFT18HW355SR6
13
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
14
RF Device Data
Freescale Semiconductor, Inc.
AFT18HW355SR6
AFT18HW355SR6
15
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
The R5 tape and reel option for AFT18HW355S part will be available for 2 years after release of AFT18HW355S. Freescale
Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the
2 year period customers who have purchased this device in the R5 tape and reel option will be offered AFT18HW355S in the R6
tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Jan. 2013 Initial Release of Data Sheet
1Jan. 2013 Typical Performance frequency table: updated values to show statistical broadband performance, p. 1
Maximum Ratings table: added CW operation showing 25C maximum CW rating limitation, p. 2
Functional Tests table: updated typical values to reflect 1880 MHz typical performance values from p. 1
Typical Performance frequency table, changed Power Gain minimum value from 42.0% to 45.0%, p. 3
Load Mismatch table: updated VSWR output power rating to a higher 2--carrier W--CDMA value, p. 3
Typical Performance table: added footnote 5 to align with data in table, p. 3
Fig. 10, Peaking Side Load Pull Performance — Maximum P1dB Tuning: corrected VGSB from 1.45 Vdc to
1.7 Vdc, p. 8
Fig. 11, Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning: corrected VGSB from
1.45 Vdc to 1.7 Vdc, p. 8
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RF Device Data
Freescale Semiconductor, Inc.
AFT18HW355SR6
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Document Number: AFT18HW355S
Rev. 1, 1/2013
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