MMBD4148/CA/CC/SE
Taiwan Semiconductor
1 Version: D1903
200mA, SMD Switching Diode
FEATURES
Designed for mounting on small surface
Low Capacitance
Low forward voltage drop
Moisture sensitivity level: level 1, per J-STD-020
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
Case: SOT-23
Molding compound meets UL 94 V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Weight: 8 mg (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
IF 200 mA
VRRM 100 V
IFSM 2 A
VF at IF=10mA 1 V
TJ Max. 150 °C
Package SOT-23
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Marking code on the device
MMBD4148 5D
MMBD4148CA A1
MMBD4148CC A4
MMBD4148SE A7
Repetitive peak reverse voltage VRRM 100 V
Forward current IF 200 mA
Repetitive peak forward surge current IFRM 700 mA
Non-repetitive peak forward surge current at t=1μs IFSM 2 A
at t=1s 1
Junction temperature range TJ -55 to +150 °C
Storage temperature range TSTG -55 to +150 °C
MMBD4148/CA/CC/SE
Taiwan Semiconductor
2 Version: D1903
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance RӨJA 357 °C/W
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL MIN MAX UNIT
Forward voltage per diode (1) IF= 10mA, TJ = 25°C VF - 1.0 V
Reverse current @ rated VR per
diode (2)
VR= 20V ,TJ = 25°C
IR
- 25.0 nA
VR= 75V ,TJ = 25°C - 5.0
μA
VR= 20V ,TA = 150°C - 50.0
Reverse breakdown voltage
IR= 5μA ,TJ = 25°C
V(BR)
75 -
V
IR= 100μA ,TJ = 25°C 100 -
Junction capacitance 1 MHz, VR=0V CJ - 4.0 pF
Reverse recovery time IF=10mA,IR=1mA,
RL=100ῼ, VR=6V trr - 4.0 ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING
INFORMATION
ORDERING CODE
(Note 1) PACKAGE PACKING
MMBD414xx RFG SOT-23 3K / 7" Reel
MMBD414xx R5G SOT-23 10K / 13" Reel
Note:
1. "xx" defines part no. from "8" to "8SE”
MMBD4148/CA/CC/SE
Taiwan Semiconductor
3 Version: D1903
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 1 Power Derating Curve
Fig.2 Forward Characteristics
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Capacitance vs. Reverse Voltage
0
100
200
300
400
500
0 100 200
0.001
0.01
0.1
1
0 0.5 1 1.5
TA=150oC
TA=75oC
TA=25oC
TA=0oC
TA= -40oC
0.1
1
10
100
1000
10000
0 20 40 60 80 100
TA=-40oC
TA=0oC
TA=25oC
TA=75oC
TA=150oC
TA=125oC
0.0
0.4
0.8
1.2
1.6
2.0
0 10 20 30 40
f=1.0MHz
IF, Instantaneous Forward Current (A)
T
A
- Ambient Temperature (
o
C)
IR, Instantaneous Reverse Current (nA)
VR, Instantaneous Reverse Voltage (V)
CT, Total Capacitance (pF)
VR, Reverse Voltage (V)
VF, Instantaneous Forward Voltage (V)
PD, Power Dissipation (mW)
MMBD4148/CA/CC/SE
Taiwan Semiconductor
4 Version: D1903
PACKAGE OUTLINE DIMENSION
SOT-23
SUGGEST PAD LAYOUT
PIN CONFIGURATION
MMBD4148/CA/CC/SE
Taiwan Semiconductor
5 Version: D1903
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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