© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V-800V > BTA16-600CW3G, BTA16-800CW3G, Triac
• Blocking Voltage to 800 V
• On-State Current Rating
of 16 A RMS at 25°C
• Uniform gate trigger for
Quadrants I, II, and III.
• High Immunity to dv/dt
− 1000 V/µs minimum at
125°C
• Minimizes Snubber
Networks for Protection
• Industry Standard TO-
220AB Package
• High Commutating di/
dt − 8.5A/ms minimum at
125°C
• Internally Isolated (2500
VRMS)
• These components are
Pb−Free and are RoHS
Compliant
Features
Designed for high performance full−wave ac control
applications where high noise immunity and high
commutating di/dt are required.
Description
BTA16-600CW3G, BTA16-800CW3G,
Additional Information
Samples
Resources
Datasheet
Pin Out
RoHS
Schematic Symbol
MT2 MT1
G
CASE 221A
STYLE 4
12
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V-800V > BTA16-600CW3G, BTA16-800CW3G, Triac
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C) BTA16−600CW3G
BTA16−800CW3G VDRM,
VRRM
600
800 V
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT (RMS) 12 A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC= 25°C) ITSM 125 A
Circuit Fusing Consideration (t = 8.3 ms) I2t 78 A²sec
Non−Repetitive Surge Peak Off−State Voltage
(TJ = 25°C, t = 10 ms) VDSM/ VRSM
VDSM/ VRSM
+100 V
Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 W
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 20 W
Average Gate Power (TJ = 125°C) PG(AV) 1.0 W
Operating Junction Temperature Range TJ-40 to +125 °C
Storage Temperature Range Tstg -40 to +125 °C
RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) Viso 2500 V
Maximum Ratings (TJ = 25°C unless otherwise noted)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Case (AC)
Junction−to−Ambient RƟJC
RƟJA
2.5
60 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds TL260 °C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Ty p Max Unit
Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open) TJ = 25°C
TJ = 125°C IDRM,
IRRM
- - 0.005 mA
- - 2.0
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Characteristic Symbol Min Ty p Max Unit
Forward On-State Voltage (Note 2) (ITM = ±17 A Peak) VTM − − 1.55 V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω)
MT2(+), G(+)
IGT
2.0 − 35
mAMT2(+), G(−) 2.0 − 35
MT2(−), G(−) 2.0 − 35
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±500 mA) IH− − 50 mA
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+)
IL
− − 60
mAMT2(+), G(−) − − 65
MT2(−), G(−) − − 60
Gate Trigger Voltage (VD = 12 V, RL = 30 Ω)
MT2(+), G(+)
VGT
0.5 − 1.7
VMT2(+), G(−) 0.5 − 1.1
MT2(−), G(−) 0.5 − 1.1
Gate Non−Trigger Voltage (TJ = 125°C)
MT2(+), G(+)
VGD
0.2 − −
V
MT2(+), G(−) 0.2 − −
MT2(−), G(−) 0.2 − −
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V-800V > BTA16-600CW3G, BTA16-800CW3G, Triac
Voltage Current Characteristic of SCR
Quadrant Definitions for a Triac
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage
IHHolding Current
Dynamic Characteristics
Characteristic Symbol Min Ty p Max Unit
Rate of Change of Commutating Current, See Figure 9.
(Gate Open, TJ = 125°C, No Snubber) (dI/dt)c 8.5 − − A/ms
Critical Rate of Rise of On−State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt − − 50 A/µs
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 1000 − − V/µs
+C urrent
+V oltage
VTM
IH
IDR M at VDR M
on stat e
off stat e
IRR M at VRR M
Quadrant 1
Main Terminal 2 +
Quadrant 3
Main Terminal 2 VTM
IH
All polarities are referenced to MT1.
With in phase signals (using standard AC lines) quadrants I and III are used
MT 1
(+) IGT
GA TE
(+) MT 2
RE F
MT 1
() IGT
GA TE
(+) MT 2
RE F
MT 1
(+) IGT
GA TE
() MT 2
RE F
MT 1
() IGT
GA TE
() MT 2
RE F
MT2 NEGA TIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
VItnardauQIIItnardauQ
ItnardauQIItnardauQ
IGT +I GT
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V-800V > BTA16-600CW3G, BTA16-800CW3G, Triac
Figure 4. Thermal Response
Figure 5. Hold Current Variation
Figure 3. On−State Characteristics
r(t), TRANSIEN T THERMAL RESIST ANCE (NORMALIZED)
1
0.1
0.01 4
10001001010.1
IT
0.1
1
10
100
1000
°
°
°
°
°
°
125
120
46 81012
IT(RMS), RMS ON-STATE CURRENT (AMP)
115
110
105
100
95
90
85
80 161420
DC
= 30 and 60 °
= 90°
= 120°= 180°
TC, Case Temperature (ºC)
Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation
16141246 81020
20
18
16
14
12
10
8
6
4
2
0
DC 180°
120°
90°
60°
= 30°
IT(RMS), RMS ON-STATE CURRENT (AMP)
PAV, Average Power (Watts)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V-800V > BTA16-600CW3G, BTA16-800CW3G, Triac
°
1
10
100
L
I
110
Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation
°
0.6
1
1.2
1.6 L
110
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
LL1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE TRIGGER
CL
51
MT2
MT1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/26/19
Thyristors
Surface Mount – 600V-800V > BTA16-600CW3G, BTA16-800CW3G, Triac
Dimensions Part Marking System
A
K
L
V
G
D
N
Z
H
Q
FB
12 3
4
SEATING
PLANE
S
R
J
U
TC
Pin Assignment
1Main Terminal 1
2Main Terminal 2
3 Gate
4 No Connection
Ordering Information
Device Package Shipping
BTA16−600CW3G TO−220AB
(Pb−Free) 500 Units / Rail
BTA16−800CW3G TO−220AB
(Pb−Free) 500 Units / Rail
TO 220AB
CASE 221A
STYLE 12
123
4
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
Dim Inches Millimeters
Min Max Min Max
A0.590 0.620 14.99 15.75
B0.380 0.420 9.65 10.67
C0.178 0.188 4.52 4.78
D0.025 0.035 0.64 0.89
F0.142 0.147 3.61 3.73
G0.095 0.105 2.41 2.67
H0.110 0.130 2.79 3.30
J0.018 0.024 0.46 0.61
K0.540 0.575 13.72 14.61
L0.060 0.075 1.52 1.91
N0.195 0.205 4.95 5.21
Q0.105 0.115 2.67 2.92
R0.085 0.095 2.16 2.41
S0.045 0.060 1.14 1.52
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.
Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
BTB16-xCWG
YMAXX
x =6 or 8
Y =Year
M =Month
A =Assembly Site
XX =Lot Serial Code
G =Pb-Free Package
