AQV453AX - Panasonic - Datasheet.Live

HE 1 Form B (AQV45❍, AQV454H)

TYPES

* Indicate the peak AC and DC values.

Note: The surface mount terminal indicator “A” and the packing style indicator “X” or “Z” are not marked on the relay.

RATING

Normally closed

DIP6-pin type

Low on-resistance with

250V/400V load voltage HE 1 F orm B

(AQV45❍, A QV454H)

I/O isolation

Output rating*

Package

Part No. Packing quantity

Load

voltage Load

current

Through hole

terminal Surface-mount terminal

Tube packing style Tape and reel packing style Tube Tape and reel

Pick ed from the

1/2/3-pin side Pick ed from the

4/5/6-pin side

AC/DC

dual use

1,500 V AC 250 V 200 mA

DIP6-pin

AQV453 AQV453A AQV453AX AQV453AZ 1 tube contains:

50 pcs.

1 batch contains:

500 pcs.

1,000 pcs.

400 V 150 mA AQV454 AQV454A AQV454AX AQV454AZ

Reinforced

5,000 V AC AQV454H AQV454HA AQV454HAX AQV454HAZ

TESTING (Standard type)(Standard type)

mm inch

FEATURES

1. 1 Form B (Normally-closed) type

with low on-resistance

This has been achieved thanks to the

built-in MOSFET processed by our

proprietary method, DSD (Double-

diffused and Selective Doping) method.

2. Controls low-level analog signals

PhotoMOS relays feature extremely low

closed-circuit offset voltage to enable

control of low-le vel analog signals without

distortion.

3. High sensitivity and low on-

resistance

Can control max. 0.2 A load current with

5 mA input current. Low on-resistance of

typ. 5.5 Ω (AQV453).

4. Reinforced insulation 5,000 V type

also available.

More than 0.4 mm .016 inch internal

insulation distance between inputs and

outputs. Conforms to IEC950 (reinforced

insulation).

TYPICAL APPLICATIONS

• Security equipment

• High-speed inspection machines

• Measuring instruments

• Telephone equipment

• Sensing equipment

8.8 6.4

3.9

8.8 6.4

3.6

.346 .252

.154

.346 .252

.142

Compliance with RoHS Directive

Source electrode

N–

N+

N+N+

P+N+N+

P+

Gate electrode

Passivation membrane

Cross section of the normally-closed type of

power MOS

Intermediate

insulating

membrane

Gate

oxidation

membrane

Drain

electrode

Height includes

standoff

1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)

Item Symbol Type of

connection AQV453(A) AQV454(A) AQV454H(A) Remarks

Input

LED forward current IF50 mA

LED reverse voltage VR5 V

Peak forward current IFP 1 A f = 100 Hz, Duty factor = 0.1%

Power dissipation Pin 75 mW

Output

Load voltage (peak AC) VL250 V 400 V

Continuous load current IL

A 0.2 A 0.15 A A connection: Peak AC, DC

B, C connection: DC

B 0.3 A 0.18 A

C 0.4 A 0.25 A

Peak load current IPEAK 0.6 A 0.5 A A connection: 100 ms (1 shot), VL = DC

Power dissipation POUT 360 mW

Total power dissipation PT410 mW

I/O isolation voltage Viso 1,500 V A C 5,000 V AC

Temperature

limits Operating Topr –40°C to +85°C –40°F to +185°FNon-condensing at low temperatures

Storage Tstg –40°C to +100°C –40°F to +212°F

PhotoMOS.book Page 227 Thursday, March 26, 2009 2:21 PM

HE 1 Form B (AQV45❍, AQV454H)

2. Electrical characteristics (Ambient temperature: 25°C 77°F)

*Operate/Reverse time

RECOMMENDED OPERATING CONDITIONS

Please obey the following conditions to ensure proper relay operation and resetting.

■ For Dimensions

■ For Schematic and Wiring Diagrams

■ For Cautions for Use

■ These products are not designed for automotive use.

If you are considering to use these products for automotive applications, please contact your local Panasonic Electric

Works technical representative.

For more information

Item Symbol Type of

connection AQV453(A) AQV454(A) AQV454H(A) Remarks

Input

LED operate (OFF) current Typical IFoff —1 mA 0.9 mA 1.4 mA IL = Max.

Maximum 3 mA

LED reverse (ON) current Minimum IFon —0.4 mA IL = Max.

Typical 0.9 mA 0.8 mA 1.3 mA

LED dropout voltage Typical VF—1.25 V (1.14 V at IF=5 mA) IF = 50 mA

Maximum 1.5 V

Output On resistance

Typical Ron A5.5

Ω

IF = 0 mA

IL= Max.

Within 1 s on time

Maximum 8

Ω

Typical Ron B2.7 Ω6.3 ΩIF = 0 mA

IL= Max.

Within 1 s on time

Maximum 4

Ω

Typical Ron C1.4 Ω3.1 ΩIF = 0 mA

IL = Max.

Within 1 s on time

Maximum 2

Ω

Off state leakage current Maximum ILeak — 1 µA 1 µA 10 µAIF= 5 mA

VL= Max.

Transfer

characteristics

Operate (OFF) time* Typical Toff —1.52 ms 1.2 ms 1.8 ms IF = 0 mA ➝ 5 mA

IL = Max.

Maximum 3 ms 2.0 ms 3.0 ms

Reverse (ON) time* Typical Ton —0.4 ms 0.36 ms 0.4 ms IF = 5 mA ➝ 0 mA

IL = Max.

Maximum 1 ms

I/O capacitance Typical Ciso —1.3 pF f = 1 MHz

VB = 0 V

Maximum 3 pF

Initial I/O isolation resistance Minimum Riso — 1,000 MΩ500 V DC

Item Symbol Recommended value Unit

Input LED current IFStandard type: 5

Reinforced insulation type: 5 to 10 mA

Toff

Input

Output 10%

90%

Ton

PhotoMOS.book Page 228 Thursday, March 26, 2009 2:21 PM

HE 1 Form B (AQV45❍, AQV454H)

REFERENCE DATA

1. Load current vs. ambient temperature

characteristics

Allowable ambient temperature: –40°C to +85°C

–40°F to +185°F

Type of connection: A

2. On resistance vs. ambient temperature

characteristics

Measured portion: between terminals 4 and 6;

LED current: 0 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

3. Operate (OFF) time vs. ambient temperature

characteristics

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

100

200

150

0 20 40 60

–20 8085100–40 Ambient temperature, °C

Load current, mA

AQV453

AQV454(H)

–40

0–20 20 40 60 8085

Ambient temperature, °C

On resistance, Ω

AQV454(H)

AQV453

–40

0–20 20 40 60 8085

4AQV454H

Ambient temperature, °C

Operate (OFF) time, ms

AQV453

AQV454

4. Reverse (ON) time vs. ambient temperature

characteristics

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

5. LED operate (OFF) current vs. ambient

temperature characteristics

Load voltage: Max. (DC);

Continuous load current: Max. (DC)

6. LED reverse (ON) current vs. ambient

temperature characteristics

Load voltage: Max. (DC);

Continuous load current: Max. (DC)

0.5

1.0

2.0

2.5

–40 0–20 20 40 60 8085

AQV454H

AQV454, AQV453

1.5

Ambient temperature, °C

Reverse (ON) time, ms

–40

0–20 20 40 60 8085

AQV454H

Ambient temperature, °C

LED operate (OFF) current, mA

AQV454

AQV453

–40

0–20 20 40 60 80

AQV454H

AQV454

AQV453

Ambient temperature, °C

LED reverse (ON) current, mA

7. LED dropout voltage vs. ambient

temperature characteristics

LED current: 5 to 50 mA

8. Current vs. voltage characteristics of output

at MOS portion

Measured portion: between terminals 4 and 6;

Ambient temperature: 25°C 77°F

9. Off state leakage current vs. load voltage

characteristics

Sample: AQV454;

Measured portion: between terminals 4 and 6;

Ambient temperature: 25°C 77°F

1.0

1.1

1.2

1.3

–40 0–20 20 40 60 8085

1.4

50mA

30mA

20mA

10mA

5mA

1.5

Ambient temperature, °C

LED dropout voltage, V

–3

200

160

120

–200

–160

–120

–80

–40

AQV453

AQV454(H)

1 2 3

–2 –1 0

Voltage, V

Current, mA

060 100

10–3

10–6

10–9

10–12

20 40 80

Load voltage, V

Off state leakage current, A

10. Operate (OFF) time vs. LED forward

current characteristics

Measured portion: between terminals 4 and 6;

Load voltage: Max. (DC); Continuous load current:

Max. (DC); Ambient temperature: 25°C 77°F

11. Re v erse (ON) time vs. LED forward current

characteristics

Measured portion: between terminals 4 and 6;

Load voltage: Max. (DC); Continuous load current:

Max. (DC); Ambient temperature: 25°C 77°F

12. Output capacitance vs. applied voltage

characteristics

Measured portion: between terminals 4 and 6;

Frequency: 1 MHz; Ambient temperature: 25°C 77°F

10 20 30 40 50 60

AQV454, AQV453

AQV454H

LED forward current, mA

Opperate (OFF) time, ms

0.2

0.4

0.8

0.6

10 20 30 40

1.0

50 60

AQV454H

LED forward current, mA

Reverse (ON) time, ms

AQV454, AQV453

Applied voltage, V

Output capacitance, pF

100

400

300

200

10 20 30 40 500

AQV453

AQV454(H)

PhotoMOS.book Page 229 Thursday, March 26, 2009 2:21 PM