1
RFP45N02L,
RF1S45N02L, RF1S45N02LSM
45A, 20V, 0.022 Ohm, N-Channel
Logic Level Power MOSFETs
May 1997
Features
• 45A, 20V
•r
DS(ON) = 0.022Ω
•
Temperature Compensating
PSPICE Model
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Description
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are
N-Channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from inte-
grated circuits.
Formerly developmental type TA49243.
Symbol
Packaging
Ordering Information
PART NUMBER PA CKAGE BRAND
RFP45N02L TO-220AB FP45N02L
RF1S45N02L TO-262AA F45N02L
RF1S45N02LSM TO-263AB F45N02L
NOTE: When ordering, use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S45N02LSM9A.
G
D
S
JEDEC TO-220AB JEDEC TO-262AA
JEDEC TO-263AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
A
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
A
A
M
DRAIN
(FLANGE)
GATE
SOURCE
File Number 4342
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 |Copyright © Intersil Corporation 1999
2
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified RFP45N02L, RF1S45N02L,
RF1S45N02LSM UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 20 V
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 20 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±10 V
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 45
Refer to Peak Current Curve A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Refer to UIS Curve
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
0.606 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
STG -55 to 175 oC
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 20 - - V
Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA1-2V
Zero Gate Voltage Drain Current IDSS VDS = 20V,
VGS = 0V TC = 25oC--1µA
TC = 150oC--50µA
Gate to Source Leakage Current IGSS VGS = ±10V - - ±100 nA
Drain to Source On Resistance rDS(ON) ID = 45A, VGS = 5V - - 0.022 Ω
Turn-On Time tON VDD = 15V, ID≅ 45A,
RL = 0.33Ω, VGS = 5V,
RGS = 5Ω
- - 260 ns
Turn-On Delay Time td(ON) -15-ns
Rise Time tr- 160 - ns
Turn-Off Delay Time td(OFF) -20-ns
Fall Time tf-20-ns
Turn-Off Time tOFF - - 60 ns
Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 16V,
ID≅ 45A,
RL = 0.35Ω
-5060nC
Gate Charge at 5V Qg(5) VGS = 0V to 5V - 30 36 nC
Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 1.5 1.8 nC
Input Capacitance CISS VDS = 15V, VGS = 0V,
f = 1MHz - 1300 - pF
Output Capacitance COSS - 724 - pF
Reverse Transfer Capacitance CRSS - 250 - pF
Thermal Resistance Junction to Case RθJC - - 1.65 oC/W
Thermal Resistance Junction to Ambient RθJA --80
oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage VSD ISD = 45A - - 1.5 V
Reverse Recovery Time trr ISD = 45A, dISD/dt = 100A/µs - - 125 ns
RFP45N02L, RF1S45N02L, RF1S45N02LSM
3
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
00 25 50 75 100 175
0.2
0.4
0.6
0.8
1.0
1.2
125 150
20
10
025 50 75 100 125 150
40
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
50
175
30
t, RECTANGULAR PULSE DURATION (s) 101
10-3 10-2 10-1 100
1
10-5
PDM
t1
t2
SINGLE PULSE
.01
.02
.05
0.1
0.2
0.5
10-4
2
0.01
0.1
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x RθJC x ZθJC + TC
ZθJC, NORMALIZED
THERMAL IMPEDANCE
VDS, DRAIN TO SOURCE VOLTAGE (V)
10 50
1
500
10
1
ID, DRAIN CURRENT (A)
DC
100µs
100ms
1ms
LIMITED BY rDS(ON)
AREA MAY BE
OPERATION IN THIS
100
VDSS MAX = 20V
TC = 25oC, TJ = MAX RATED
10ms
t, PULSE WIDTH (s)
10
10-5 10-4 10-3 10-2 10-1 100101
100
IDM, PEAK CURRENT (A)
500
I = I25 175 - TC
150
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS = 10V
VGS = 5V
TC = 25oC
RFP45N02L, RF1S45N02L, RF1S45N02LSM
4
RFP45N02L, RF1S45N02L, RF1S45N02LSM
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0.01 0.1 10
10
0.001
200
1
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1]
IAS, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (ms)
STARTING TJ = 25oC
STARTING TJ = 150oC
100
1100 0
25
0123 5
50
75
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 4V
VGS = 10V
100
4
VGS = 3V
VGS = 5V
VGS = 4.5V
VGS = 3.5V
PULSE DURATION = 250µs, TC = 25oC
03.0 4.5 6.0 7.51.5
0
25
50
75
175oC
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
ID(ON), ON-STATE DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
100 -55oC
25oC
VDD = 15V
0
25
50
75
3.0 3.5 4.0 4.5
rDS(ON), DRAIN TO SOURCE
VGS, GATE TO SOURCE VOLTAGE (V)
5.0
100
ID = 2A
ID = 30A
ID = 15A ID = 45A
2.5
PULSE DURATION = 250µs
ON RESISTANCE (mΩ)
0
150
200
250
300
010
20 30 40
SWITCHING TIME (ns)
RGS, GATE TO SOURCE RESISTANCE (Ω)50
350
100
50
tr
tf
td(OFF)
td(ON)
VDD = 15V, ID = 45A, RL = 0.333Ω
0
0.5
1.0
1.5
2.0
-80 -40 0 40 80 120 160
NORMALIZED ON RESISTANCE
TJ, JUNCTION TEMPERATURE (oC) 200
PULSE DURATION = 250µs, VGS = 5V, ID = 45A
RFP45N02L, RF1S45N02L, RF1S45N02LSM
5
RFP45N02L, RF1S45N02L, RF1S45N02LSM
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING W A VEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
-80 -40 0 40 80 120 160
0
0.5
1.0
1.5
2.0
NORMALIZED GATE
THRESHOLD VOLTAGE
TJ, JUNCTION TEMPERATURE (oC) 200
VGS = VDS, ID = 250µA2.0
1.5
1.0
0.5
0
-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
200
ID = 250µA
2500
500
0
C, CAPACITANCE (pF)
1500
2000
1000
VGS = 0V, f = 1MHz
0 5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
COSS
CRSS
20IGREF()
IGACT()
----------------------t, TIME (µs) 80IGREF()
IGACT()
----------------------
5.00
2.50
1.25
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
3.75
20
10
5
0
15
VDD = BVDSS VDD = BVDSS
RL = 0.44Ω
IG(REF) = 0.5mA
VGS = 5V
VDD = 0.75 BVDSS
VDD = 0.50 BVDSS
VDD = 0.25 BVDSS
VDD = BVDSS
PLATEAU VOLTAGES IN
DESCENDING ORDER:
RFP45N02L, RF1S45N02L, RF1S45N02LSM
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RFP45N02L, RF1S45N02L, RF1S45N02LSM
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
FIGURE 18. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
FIGURE 20. GATE CHARGE TEST CIRCUIT FIGURE 21. GATE CHARGE WAVEFORMS
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
RL
VGS +
-
VDS
VDD
DUT
IG(REF)
VGS
RL
RG
DUT
+
-VDD
VDD
Qg(TH)
VGS = 1V
Qg(5)
VGS = 5V
Qg(TOT)
VGS = 10V
VDS
VGS
IG(REF)
0
0
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
RFP45N02L, RF1S45N02L, RF1S45N02LSM
7
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Temperature Compensated PSPICE Model for the
RFP45N02L, RF1S45N02L, RF1S45N02LSM
.SUBCKT RFP45N02L 2 1 3 ; rev 11/22/94
CA 12 8 2.55e-9
CB 15 14 2.64e-9
CIN 6 8 1.05e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 33.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.9e-9
LSOURCE 3 7 4.9e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 0.14e-3
RGATE 9 20 0.89
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 10.31e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.583
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/176,6))}
.MODEL DBDMOD D (IS = 3.61e-13 RS = 5.06e-3 TRS1 = 3.05e-3 TRS2 = 7.57e-6 CJO = 2.0e-9 TT = 2.18e-8)
.MODEL DBKMOD D (RS = 1.66e-1 TRS1 = -2.97e-3 TRS2 = 7.57e-6)
.MODEL DPLCAPMOD D (CJO = 1.25e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 2.313 KP = 53.82 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 8.95e-4 TC2 = -1e-7)
.MODEL RDSMOD RES (TC1 = 3.82e-3 TC2 = 1.17e-5)
.MODEL RSCLMOD RES (TC1 = 2.03e-3 TC2 = 0.45e-5)
.MODEL RVTOMOD RES (TC1 = -2.27e-3 TC2 = -5.75e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.82 VOFF= -2.82)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.82 VOFF= -4.82)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.67 VOFF= 2.33)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.33 VOFF= -2.67)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
1
GATE
LGATE RGATE
EVTO
+
12 13
814
13
13
15
S1A
S1B
S2A
S2B
CA CB
EGS EDS
RIN CIN
MOS1
MOS2
DBREAK
DBODY
LDRAIN
DRAIN
RSOURCE LSOURCE
SOURCE
RBREAK
RVTO
VBAT
IT
VTO
ESG
DPLCAP
6
10 5
16
21
11
8
14
73
17 18
19
2
+
+
+
+
+
20
RDRAIN
ESCL
RSCL1RSCL2 51
50
+
9
-
-5
51
18
8-
6
85
8
--
6
8EBREAK +
17
18 -
RFP45N02L, RF1S45N02L, RF1S45N02LSM
8
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnishe d by Intersil is believed to be accurate
and reliable . However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
RFP45N02L, RF1S45N02L, RF1S45N02LSM
