3875081 GE SOLID STATE QO1E 17415 D7. 33-7) " File Number 676 Epitaxial-Base, Silicon -N-P-N and P-N-P VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications Features: s Low saturation voltages = Complementary n-p-n and p-n-p types . = Maximum safe-area-ol-operation curves specitied for de operation The RCA-2N6106-2N6111, 2N6286-2N6293, and 2N6473- 2N6476 are epitaxial-base silicon transistors supplied in a VERSAWATT package. The 2N6288-2N6293, 2N6473, and 2N6474* are n-p-n complements of p-n-p types 2N6106- 2N6111, 2N6475, and 2N6476", respectively. All these transistors are Intended for a wide variety of medium-power switching and amplifier applications, such as series and shunt regulators and driver and output stages of high- fidelity amplifiers. The 2N6289, 2N6291, and 2N6293 n-p-n types and 2N6106, 2N6108, and 2N6110 p-n-p devices fit into TO-213AA sockets. The remaining types are supplied in tha JEDEC TO-220A8B straight-lead version of the VERSAWATT pack- age. Ail of these devices are also available on special order in a variety of lead-form configurations. Formerly RCA Dev. Nos. TA7784, TA8323, TA7783, TA8232, TA7782, TA8231, TAB444, and TA8723, respectively. Formerly RCA Dev. Nos. TA8210, TA7741, TA8211, TA7742, TA8212, TA7743, TA8445, and TA8722, respectively. MAXIMUM RATINGS, Absolute-Maximum Values: _ (FLANGE) *__, (FLANGE) C "JO General-Purpose Power Transistors T 43-19 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 TERMINAL DESIGNATIONS TOP VIEW f2Cs-39069 JEDEC TO-220AB c ToP VIEW 9208-40186 i JEDEC TO-220AA_ i 2N6288 2N6290 2N6292 N-P-N 2N6289 2N6291 2N6293 2N6473 2N6474 P-N-P 2N6110 2N6108 2N6106 2N6475 2N6476} 2N6111 2N6109$ 2N6107 "Vega secs eceneeeseesere nearest veneeeeesnene avec eneneares 40 60 80 110 130 v * Vecex(sus) Rue = 1000, Vest OVi vc cceeccseeneaes evens nneeeeeteees 40 60 80 110 130 v Vceo(Sus) ....cseeee beet eenaseennes 30 60 70 100 120 v "VERO tees ee eaeee 5 Vv * Ie (Te S$ 106C) ...... 7 4 A He (ToS 130C) .cceccscceeveuveecnes 3 2 A Py * Te S 25C vicccsseceenvenes Deedee eae ceeeeteenteneesanens 40 Ww Te > 25C S 100C ....... seveens 16 Ww Te > 25C viecccccneseeeees tune Derate linearly 0.32 WIG Ta S 25C ., 4.8 Ww Ta> 25C ., Derate linearly 0.0144 WC Tota, These cceceeeversecserscceauaceeeeees ~65 to 150 C Th At distances = 1/8 in. (3.17 mm) from case for 10s max. .... 235 C In accordance with JEDEC registration data. $For p-n-p devices, voltage and current values are negative. 419 F-013875081 GE SOLID STATE. General-Purpose Power Transistors Ol DEW 38750a1 onizyi, 2 I O1E 17416 2N61 06-2N61 11, 2N6288-2N6293, 2N6473-2N6476 ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25C Unless Otherwise Specified Tr 34-) TEST CONDITIONS LIMITS 2N6292 2N6290 2N6288 CHARAC- VOLTAGE| CURRENT | 2N6293 2N6291 2N6289 UNITS TERISTIC Vide Adc 2N6106 | 2N6108 2N6110 2N6107* | 2N6109 2N6111 Vce Vee] 'c Ig |MIN.|MAX. | MIN.) MAX. | MIN.JMAX, . IcER 75 | 0.1 _- - - - (Reg = 1002) 55 -|- -) 0.41 -| - 35 -|- -| - - 101 (Rpg = 1002, 70 - 2 -| - -j- Tc = 150C) 50 -~|- - 2]; -| - 30 -|- -| - - 2 * licex 75 |-1.5 -{ 01 ~| - -j - (Reg = 1002) 56 |-1.5 -|- -| 0.4 -}| - 37.5 |-1.5 -|- -j| - | 0.1 mA (Rpg = 1002, 70 |-1.5 | 2 -{| - ~{- Tc = 150C} 50 |-1.5 -|- - 2, -| - 30 |-1.5 -j- -| - - 2 * lcEO 60 Oo; - 1 - - - _ 40 oj ~-|] - - 1 ~{| - 20 o| ~| - -| - - 1 * lego 5 it) - 1 - 1 - 1 * | Vogolsus) 0.18 o|70 |} 50 | - 30} - V 5 Vcerisuslb 0.18 80 | - 60 | - 40) - # (Ree = 1002) be * hee 4 2a 30/ 150] ~]j -| - 4 2.58 -~|- 30 | 150 - 4 3a - - - - 30 150 4 7a 23] - 23) - 231 - *lVee 4 2a - | 15 -|- -| - 4 2.58 -|- -| 15] -| - 4 3a -|- -~|- -} 15 4 7a _ 3/ - 3] - 3 V *1Vcel(satl 2a} 0.2] 1 -j - -j - 2.52 10.25, -} - - 1 -{| - 3a} o3f - |] - -| - - 1 * 7 3} -| 35] -| 35 -} 35 *| [nhggl (f = 1 MHz) 2N6288-93 4 0.5 4} - 4} - 4] - 2N6106-11 -4 -0.5 to | - wo | - 10} - ' * | hee ( f= 50 kHz) 4 0.5 20 | - 20 | - 20} - fy . 2N6288-93 4 0.5 10 | - 10 | - 1} - MHz 2N6106-11 4 -0.5 10 | - 10} - 10 | - *1 Cobo (f= 1 MH2) 104 0 | 250 -{| 250] ]| 250 i pF Reuc 13.125 | - 13.125] | 3.125 ee Raga -| 7o; -| 70} -| 70 yon * In accordance with JEDEC registration data. 6 Ves value, Pulsed: Pulse duration = 300 us, duty factor = 0.018. 5 CAUTION: The sustaining voltage Veggisus) and VogRlsus) MUST NOT be measured on a curve tracer. @ For p-n-p devices, voltage and current values are negative. 337! 9 az"3875081 G E SOLID STATE OL DE 3875081 oo17417 y fT QO1E 17417 General-Purpose Power Transistors 0960 0 Ts 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 ELECTRICAL CHARACTERISTICS At Case Temperature (Tol = 25C Unless Otherwise Specifiea T DF - (Fj TEST CONDITIONS LIMITS VOLTAGE! CURRENT | 2N6474 2N6473 CHARACTERISTIC Vide Ade 2N6476 2N6475 __| UNITS VcelVBe| 'c Ig |Min.| Max. | Min.| Max. IcER 120 - 0.1 -| - (Ree = 100 22) 100 -| - -| of (Ree = 1002 120 - 2] -| - Te = 100C) 100 -| - = 2 *} IcEX 120 |--1.5 -| o1f7 -] - (Ree = 100 9) 100 |-1.5 -| - -| 0.4 mA (Age = 100, 120 }-1.5 - 2} -| - Te = 100C} 100 |~1.5 -| - - 2 *lIcEO 60 o | - 4] -} - 50 o | -| - - 1 *!leBo 5 o |] - 1} - 1 . * | Vceolsus)b 0.18 | oO 120} - 100 | Voerisus)b v| (Rag = 1002} 0.14 130} - |110] - *Ihee 4 1.58 15| 150 | 15| 150 I 2.5 4a 2], - 2} ~ : *|Vee 4 1.58 -~ 2] - 2 2.5 4a -~| 35 | - | 35 Vv * |Voglsat) 1.54 70.151 -] 1.2] -] 1.2 43 2j,-] 25] -]} 25 : * TIhgel (f= 1 MHz) 2N6473-74 4 0.5 - - 2N6475-76 -4 0.5 - - * lhe (f= 50 kHz) 4 0.5 20 | - 20 | - fr 2N6473-74 4 0.5 - 4|- MHz 2N6475-76 ~4 -0.5 - 4| - * ICobo (f= 1 MHz) 106 0 - | 250 | ~ | 250 pF Rouc 43.126 | |3.125 CAV Roa ~| 70 | -j 70 * In accordance with JEDEC registration data c Ves value, 4 Pulsed: Pulse duration = 300 us, duty factor = 0.018, b CAUTION: The sustaining voltage Voeolsus) are Veer(sus! MUST NOT be measured on a curve tracer. * For p-n-p devices, voltage 4nd current values are negative. he 421 F-03 s-// .OL DE W38750481 0017418 & I 3875081 GE SOLID STAT O1 17418 Dd 7 BR-1) TBS NG 2N61 06-2N6111 , 2N6288-2N6293, 2N6473-2N6476 CASE TEMPERATURE (To l *C OCS 284s Fig. 1 ~ Current derating curves for all types. ceo {2n64 Yoeo MAK 100 V(2N6473) COLLECTOR -TO-EMITTER VOLTAGE (Vcgl- eres-22526 Fig, 3 -Maximum operating areas for 2N6473 2N6474 (To = 100 Ch, COLLECTOR- i | -o.01 -04 + -t0 COLLECTOR CURAENT (Tc)A pics-16008 Fig. 5 - Typical dc beta characteristics for 2N6106 2N6111, 422 F-04 TEMPERATURE Vero MAX.130 (2N6z68 6 26269) Vero MAK.*S0V (2N8290 6 Veeg MAX. TOV (zne292 & 5 i : i COLLECTOR -TO-EMITTER VOLTAGE (Veg)- V 8209-22826 Fig. 2 ~ Maximum operating areas for 2N6288 2N6293 (T= 100 C}. r i 1 + Voce MAX. 120 Vv (2H64 Vero MAK sf00V (2N64 . t et -10 100 +T0-EMIT TAS = COLLECTOR -TO-EMITTER VOLTAGE (Vcel- szcs-zasze Fig. 4 ~- Maximum operating areas for 2N6476 and 2N6476 (To = 100 Ci. TO-EMITTER VOLTAGE E 2 3 5 $ a Ez e 8 z 2 t 8 oo OW 1 10 COLLECTOR CURRENT {IglA $2C8-I96aaRt Fig. 6 - Typical de beta characteristics for 2N6288 2N6293. 0961O1 DE 3875081 OOL74149 8 i 3875081 GE SOLID STATE ~~ O1E 17419 D0? SS*// General-Purpose Power Transistors be i , 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 oO faye TSS ~19 EMITTER td TEMPERATURE - OC FORWARD- CURRENT TRANSFER RATIO thee) DC FORWARO-CURRENT TRANSFER RATIO 0.01 Ot 1 to =O: =1 - COLLECTOR CURRENT {Igtna COLLECTOR CURRENT iTelma NaCs-72530 92CS-2Z5S9R Fig. 7 - Typical de beta characteristics for Fig. 8- Typical de beta characteristics for 2N6473 and 2N6474, 2N6475 and 2N6476, CASE TEMPERATURE = 25C CONTINUOUS Voeo (MAX.}=-30V (2NGIIO, 2NEIN) -1 Voeo (MAX.)-50V (2N6108, 2N6IO9) ~ | Vogg (MAK) = 70 V "|{2N6106, 2NGIO7) = COLLECTOR-TO-EMITTER VOLTAGE (Vce)V 92C8-18001 Fig. 9 - Maximum operating areas for 2N6106 2NG111 To? 25C). 423ae. OL DE 93875081 oouzuag y gq oer ene G E SOLID STATE O1E 17420. pias ll eneral-Purpose Power Transistors oe Z : : . : 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 : A G CASE TEMPERATURE (Tc) 25 10 : MAX (CONTINUOUS) (2N6286, 2N6269) COLLECTOR CURRENT (Ig )-A 270V (2N6292, 2N6293) { too COLLECTOR-TO-EMITTER VOLTAGE (Vce}V 92cs-19662 Fig. 10 - Maximum operating areas for 2N62882N6293 (To = 25C). cl-A COLLECTOR CURRENT (I VcEo . Vceo . (2N6473) ! 2 4 6al 2 alee 2 4 eal t to 35 1000 COLLECTOR -TO-EMITTER VOLTAGE {Vog)- V 9208-22524 Fig. 11 - Maximum operating areas for 2N6473 and 2N6474 (To = 26C). 424 9.963 F 06OL DEM 3875041 o017421 & I 3875081 GE SOLID STATE _ O1E 17421 dT Sl] bh General-Purpose Power Transistors 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 _ TBO ~19 c)-A + a @ 4 COLLECTOR CURRENT Ny 22 MAX. -120V t MAX #=(00V (2NG6475} 2 4 8 2 4 6 8 2 4 1 ~1000 COLLECTOR -TO-EMITTER VOLTAGE (VcEI-V goes nasay Fig. 12 - Maximum operating areas for 2N6475 2N6476 ( To* 25C). COLLECTOR TO EMITTER VOLTAGE (Voge -4 COLLECTOR + TO-EMITTER VOLTAQE @ASE CURRENT 0.5 1 ! 2 BASE = TO-EMITTER VOLTAGE {Veet -v BASE~7O- EMITTER VOLTAGE (Veel-V b2ce-1doiz 9208-27531 Fig. 13 -Typical input characteristics for 2NG106 -- Fig. 14 - Typical inpue charecteristics for 2N6288 2N6111, 2NG475, and 2N6476. 2N6293. *TO-EMITTER VOLTAGE iVeele4v COLLECTOR~TO~EMITTER VOLTASE (Vcg}o-4 > COLLECTOR CURRENT [Ie }A 1 1s =0.8 =t =2 BASE-TO- EMITTER VOLTAGE (Vagv BASE -TO-EMITTER VOLTAGE (Vee) -v 9209-22532 etcs-isois Fig. 18 - Typical input characteristics for 2N6473 Fig. 16 - Typical transfer characteristics for 2NG106 ~ 2N6474, , 2N6111, 425 a3875081 GE SOLID STATE General-Purpose Power Transistors 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 O1E 17422 COLLECTOR~TO-EMITTER VOLTAGE (Vogle4v < vu HW E z rn < x a o 3 - oO w 3 06 os i 12 L@ 16 BASE -TO-EMITTER VOLTAGE (Vag) vV 9205-22535 Fig. 17 - Typical transfer characteristics for 2N6G288 2N6293, COLLECTOR-TO~EMITTER VOLTAGE (Vcple-4 4 a * COLLECTOR CURRENT (I 1A e BASE -TO~EMITTER VOLTAGE [Vgg) V 9209-22537 Fig. 19 ~ Typical transfer characteristics for 2N6475 and 2N6476, CASE TEMPERATURE (T.) o2aee 2 4 6 8 10 {2 4 6 COLLECTOR TOEMITTER VOLTAGE [VcpiV 92CS~1967 SAI Fig. 21 - Typical output characteristics for 2N6288 2N6293, COLLECTOR CURRENT (Ip } A COLLECTOR CURRENT (I)A COLLECTOR CURRENT {I)A COLLECTOR-TO-EMITTER VOLTAGE ye ay QASE-TO-EMITTER VOLTAGE Woe? _v O08 22536 Fig, 18 - Typical transfer characteristics for 2N6473 and 2N6474, CASE TEMPERATURE (Te 1*25C COLLECTOR-TO-EMITTER VOLTAGE icp) OICE-1SOIERT Fig. 20 - Typical output characteristics far 2N6106 2N6T11. CASE TEMPERATURE (Tee 25C COLLECTOR-TO- EMITTER VOLTAGE (Vcel B208-27539 Fig. 22 ~ Typical output characteristics for 2N6473 and 2N6474,x. nn nN vo epee OL DEM 3875081 0017423 O i E SOLID STATE O1E 17423 Dr ssl) Gieneral-rurpose rower Transistors 3875081 : , 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 COLLECTOR -TO-EMITTER VOLTAGE (VcE}e-4V T- AD 9 CASE TEMPERATURE {Tp 1525C CASE TEMPERATURE h 0 : z 3 o o w J x 8 GAIN~ SANOWIOTH PRODUCT (fy) MHr COLLECTOR-T0-EMITTER VOLTAGE (cE)V 0.01 ol t 10 ezes-tanye COLLECTOR CURRENT (Igla e2cs-22528 Fig, 23 - Typical output characteristics for Fig. 24 - Typical gain-bandwidth product 2N6106 2N6475 and 2N6476, 2N6111, 2N6475, and 2N6476, COLLECTOR-TO-EMITTER VOLTAGE iVce}=4V CASE TEMPERATURE (Tche25c GAIN-BANDWIDTH PRODUCT (t7)-MHz COLLECTOR -TO-EMITTER VOLTAGE (VcE)<-4 CASE TEMPERATURE (Te, )5 25C z 2 I - s 3 z a x a = < a : zZ < 6 COLLECTOR CURRENT licl-& S2CS~ 19674 ARENT A COLLECTOR CURRENT (Te) 9208-22530 Fig. 25 - Typical gain-bandwidth product for 2N6288 ~ 2N6293. Fig. 26 - Typical gain-bandwidth product tor 2N6473 and 2N6474, t Zz w = 50 omy 3 rr 120) aw e t iw | 25 mH el JW MLLER He. 4533, ge OR EQUIVALENT we cr0. 2 @ 10 ev \ 10.1%, 172 w COLLECTOR-TO-EMITTER VOLTAGE 60H: (NOM -INDUCTIVE) Wegl- . bom |- oscixLoscore Sacg-22841 groreca rape, HEWLETT-PACKARD. Note: Curve will be inverted and polarity reversed P&B IML 81308, Device On an eeee for p-n-p types. The sustaining voltage, ee i028. OR Test VcER(sus), is accepatble when the traces fall to the right and above the designated points: Point A: 2N6110,2N6111,2N6288,2N6289 Point B: 2N6108,2N6109,2N6290,2N6291 oon vow Veeolsust Veen ton) ne, Point C: 2N6106,2N6107,2N6292,2N6293 NOTES FOR p-n-p TYPES,REVEASE POLARITY OF Vcc" Point DB: 2N6475,2N6473 vacatasao Point E: 2N6476,2N6474 Fig. 28 - Oscilloscope delay for measurement of Fig. 27 - Circuit used to measure sustaining sustaining voltage {test circuit shown in voltage Veg plsus} for all types. Fig, 27). ; 427 0966 F-09