BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor KTC3265
Document number: BL/SSSTC109 www.galaxycn.com
Rev.A 1
Pb
Lead-free
FEATURES
z High DC current gain: hFE:100-320
z Low saturation voltage.
z Suitable for driver stage of small motor.
z Complementary to KTC1298.
z Small package.
APPLICATIONS SOT-23
z Low frequency power amplifier application.
z Power switching application.
ORDERING INFORMATION
Type No. Marking Package Code
KTC3265 EO/EY SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current -Continuous 800 mA
IBBBase Current 160 mA
PCCollector Power Dissipation 200 mW
Tj,Tstg Junction and Storage Temperature -55~150 ℃