LVXYU-ZX% LVX Series Power MOSFET 25K1810 Vv (F10V30) 1X7 ~-MOSFET N-F + BRAT Y FYI RIL, LYINYAAY bh Mth tiAR OUTLINE DIMENSIONS 300V 10A [Unit : mm] 4.6402 oy hae) | deh z Date code ~f_ Y ae @ANBE (Ciss) DAT. a & @ vs IC VO 4 PABOANB EDA, EIAT No P1810 = Os ViEMNVNAL. rq O44 VFY IFA LDR 14 +01 WAH * . 9.4 03 0.74 01 % 06 +08 OxneaEE @ Gate Hii} @Et hss. HMRESOOC/DCIVIN-F @) Drain @0C 12~48VA DOSER @) Source 2.54 2.54 DO Metis RATINGS @HHRATH Absolute Maximum Ratings OCU ae & fF aaa Hy, Item Symbo! Conditions Ratings Unit Pee ont Storage Temperature Tstg 55-~150 Channel Te Teh 150 C Fea4y-Vv-ARE Orain Source Voltage Voss 300 v Yb DARE Gate Source Voltage Vass +30 Vv KU ve bc Ib 10 Continuous Drain Current A Peak Ibp 20 J ABR AH) Continuous Source Current (DC) Is 10 A BRK Pr | Te=25C Ww Total Power Dissipation T c= 50 MOT be D GHESMA . 3kg cm) Mounting Torque TOR (Recommended torque 1 3kg + om) 5 kg-cm @BRH) - MH Electrical Characteristics (Tc=25C) Bq A als & # ARE Ratings | Bifz Item Symbol Conditions min. | typ. | max. | Unit brain Souce Beane Voltage Vieripss| Io>=1mA, Vas=0V 300 Vv FU 4 eR = = Zero Gate Voltage Drain Current Ibss Vos=300V, Vos=0V 250 vad A 7 FAT Ri Io a = + Gate - Source Leakage Current OSS Vos=30V, Vos=0V +100} nA ees Tronsconductence Sfs ID=5A, Vos=1OV 2 4 s FL4y- vO ARs yi Static OrainSource On state Resistance Rosoni| Ib=5A, Vos=10V 0.46 0.7 9 Gare Thvenhoe Venage Vm | Ib=1mA, Vos=10V 2/3 ]4]v YrR: FUTUR YT 4 FRE _ Source + Drain Diode Forward Voltage Vsp Is=5A, Vas=0V 15 Vv Rit . RAG - 7-2 5 Thermal Resistance 9 Je junction and case 2.5 "C/W Cota Chote Ch tteriatis Qe | Vos=10V, Io=10A, Voo=200V, 24 nc ANSE : input Capacitance Ciss 700 pF AREE Cc _ _ _ Reverse Transfer Capacitance tss | Vos=10V, Vos=0V, f=1MHz 85 pF He Output Capacitance Coss 245 pF Foyva fon 75 150 ns _ oars rT IbD=5A, Vas=10V, Ri=300 Turn-off Time loft 100 200 ns SHINDENGEN ELECTRIC MFG. CO., LTD. M 6219348? OO0245b 75) me M@ StH CHARACTERISTIC DIAGRAMS 2SK1810(F10V30) ate Transfer Characteristics Ft + Y2M4 HE Static Drain-Source On-state Resistance FbL& MRE Gate Threshold Voltage Safe Operating Area KUT > Bim In(A) (tee Oy FL y+ /AMMBE Vos(V) Transient Thermal Impedance i = = x & z a R bs 4 gl REA t (s) T mn a z a 2 > $ 2 S e g 3 81 x # e h bc A = 3 + "2 3s x > fe | a > | N BS < _ i Vos =25V 3 Ves =10V Vos=10V pulse test om pulse test lo= I mA typical a typical typical 7h VOARMBE Ves(v) 77iBE TolT) 72ABE Tc(TC) REwran AiR Feeie gra Capacitance FrNI+R Ciss Coss Crss (pF) Te=25t typical S FU4 +-Y2ANBE Vos(V] SRERDR7-AA Power Derating I SRRBPR (%) 472BE Tcl('C) FbhF + tt Gate Charge Characteristics KL4v-VAMMBE Vos(V) 7b JANNBE Ves(V) FMB Og(nC) 3219387 OOO249? bw8 SHINDENGEN ELECTRIC MFG. CO.,LTD. #147