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FEATURES
• Double Side Cooling
• High Surge Capability
APPLICATIONS
• Rectification
• Free-wheel Diode
• DC Motor Control
• Power Supplies
• Welding
• Battery Chargers
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VDRM
V
Conditions
DS2106SY40
DS2106SY39
DS2106SY38
DS2106SY37
DS2106SY36
DS2106SY35
4000
3900
3800
3700
3600
3500
VRSM = VRRM+100V
Lower voltage grades available.
ORDERING INFOR MATION
When ordering, select the required part number
shown in the Voltag e Ratings selection table.
For example:
DS2106SY37 for a 3700V device in a Y outline
or
DS2106SV37 for a 3700V device in a V outline
Note: Please use the complete part num ber when ordering
and quote this number in any future correspondence
relating to your order.
KEY PARAMETERS
VRRM 4000V
IF(AV) 3830A
IFSM 62500A
(See Package Details for further information)
Fig. 1 Package outlines
DS2106SY/DS2106SV
Rectifier Diode
DS4182-6.1 June 2005 (LN23990)
SEMICONDUCTOR
DS2106SY/DS2106SV
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CURRENT RATINGS
Tcase = 75° C unless stated otherwise
Symbol
Parameter
Test Conditions Max. Units
Double Side Cooled
IF(AV) Mean forward current Half wave resistive load 3830 A
IF(RMS) RMS value -6016 A
IFContinuous (direct) on-state current -5597 A
Double Side Cooled (Anode side)
IF(AV) Mean forward current Half wave resistive load 2525 A
IF(RMS) RMS value -3966 A
IFContinuous (direct) on-state current -3421 A
Tcase = 100° C unless stated otherwise
Symbol
Parameter
Test Conditions Max. Units
Double Side Cooled
IF(AV) Mean forward current Half wave resistive load 2850 A
IF(RMS) RMS value -4475 A
IFContinuous (direct) on-state current -4190 A
Double Side Cooled (Anode side)
IF(AV) Mean forward current Half wave resistive load 1920 A
IF(RMS) RMS value -3014 A
IFContinuous (direct) on-state current -2500 A
SEMICONDUCTOR
DS2106SY/DS2106SV
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SURGE RATINGS
Symbol
Parameter
Test Conditions Max. Units
IFSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 150°C 50.0 kA
I2t I2t for fusing VR = 50% VRRM - ¼ sine 12.5 MA2s
IFSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 150°C 62.5 kA
I2t I2t for fusing VR = 0 19.6 MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions Min. Max. Units
Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.0095 °C/W
Single side cooled Anode DC - 0.019 °C/W
Cathode DC - 0.019 ° C/W
Rth(c-h) Thermal resistance – case to heatsink Clamping force 43kN Double side - 0.002 ° C/W
(with mounting co mpo und) Single side - 0.004 ° C/W
Tvj Virtual junction temperature On-state (conducting) -160 °C
Reverse (blocking) -150 °C
Tstg Storage temperat ure range -55 150 °C
FmClamping force 38.0 47.0 kN
SEMICONDUCTOR
DS2106SY/DS2106SV
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CHARACTERISTICS
Symbol
Parameter
Test Conditions Min. Max. Units
VFM Forward voltage At 3000A peak, Tcase = 25°C - 1.15 V
IRM Peak reverse current At VDRM, Tcase = 150°C -250 mA
QSTotal stored charg e IF = 2000A, dIRR/dt =3A/µs -5000 µC
Irr Peak reverse recovery current Tcase = 150°C, VR =100V -150 A
VTO Threshold voltage At Tvj = 150°C - 0.75 V
rTSlope resistance At Tvj = 150°C - 0.118 mΩ
CURVES
0
2000
4000
6000
8000
10000
02000 4000 6000 8000
Mean Power Dissipation - (W)
dc
1/2 wave
3 phase sq.
6 phase sq.
Fig.2 Maximum & minimum on-state characteristics Fig.3 Dissipation curves
VTM EQUATION Where A = - 0.15357
B = 0.177571
VTM = A + Bln (IT) + C.IT+D.√ITC = 0.000179
D = - 0.01294
these values are valid for Tj = 150° C for IF 500A to 5000A
SEMICONDUCTOR
DS2106SY/DS2106SV
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Fig.4 Total stored charge Fig.5 Maximum reverse recovery current
Fig.6 Surge (non-repetitive) forward current vs time
(with 50% VRRM at Tcase 150° C) Fig.7 Maximum (limit) transient thermal impedance-
junction to case
SEMICONDUCTOR
DS2106SY/DS2106SV
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PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Normal weight: 1600g
Clamping force: 43kN±10%
Pakage outline type code:Y
Note:
Some packages may be supplied with gate and or tags.
SEMICONDUCTOR
DS2106SY/DS2106SV
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PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Normal weight: 1100g
Clamping force: 43kN ± 10%
Package outline type code: V
Note:
Some packages may be supplied with gate and or tags.
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always
be followed.