TDA8547TS/N1/02,11 - NXP SEMICONDUCTORS

DATA SH EET

Product specification

Supersedes data of 1997 Oct 14 1998 Apr 01

INTEGRATED CIRCUITS

TDA8547TS

2×0.7 W BTL audio amplifier with

output channel switching

1998 Apr 01 2

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

FEATURES

•Selection between output channels

•Flexibility in use

•Few external components

•Low saturation voltage of output stage

•Gain can be fixed with external resistors

•Standby mode controlled by CMOS compatible levels

•Low standby current

•No switch-on/switch-off plops

•High supply voltage ripple rejection

•Protected against electrostatic discharge

•Outputs short-circuit safe to ground, VCC and across the

load

•Thermally protected.

APPLICATIONS

•Telecommunication equipment

•Portable consumer products

•Personal computers

•Motor-driver (servo).

GENERAL DESCRIPTION

The TDA8547TS is a two ch annel audio power amplifier

for an output power of 2 ×0.7 W with a 16 Ω load at a 5 V

supply. At a low supply voltage of 3.3 V an output power of

0.6 W with an 8 Ω load can be obtained. The circuit

contains two BTL amplifiers with a complementary

PNP-NPN output stage and standby/mute logic.

The operating conditio n of all channels of the device

(standby, mute or on) is externally controlled by the

MODE pin. With the SELECT pin one of the output

channels can be switched in the standby condition. This

feature can be used for loudspeaker selection and also

reduces the quiescent current consumption.

When only one channel is used the maximum outp ut

power is 1.2 W.

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCC supply voltage 2.2 5 18 V

Iqquiescent current VCC = 5 V; 2 channels −15 22 mA

VCC = 5 V; 1 channel −812mA

Istb standby current −−10 μA

Pooutput power

two channels THD = 10%; RL=8Ω; VCC = 3.3 V 0.5 0.6 −W

THD = 10%; RL=16Ω; VCC =5V 0.6 0.7 −W

one channel THD = 10%; RL=8Ω; VCC =5V 1 1.2 −W

THD = 10%; RL=4Ω; VCC =3.3V 1 1.2 −W

THD total harmonic distortion Po=0.4W −0.15 −%

SVRR supply voltage ripple rejection 50 −−dB

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

TDA8547TS SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

1998 Apr 01 3

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

BLOCK DIAGRAM

Fig.1 Block diagram.

handbook, full pagewidth

MGK984

STANDBY/MUTE LOGIC

20 kΩ

IN1−

IN1+

VCC1

OUT1−

OUT1+

−

STANDBY/MUTE LOGIC

20 kΩ

IN2−

IN2+

VCC2

SVRR

MODE

OUT2−

OUT2+

−

SELECT

GND1 GND2

CC1 VCC2

20 11

110

n.c. 2, 7, 9, 12, 19

TDA8547TS

1998 Apr 01 4

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

PINNING

SYMBOL PIN DESCRIPTION

GND1 1 ground, channel 1

n.c. 2 not connected

OUT1+ 3 positive loudspeaker terminal,

channel 1

MODE 4 operati ng mo de se lect (standby, mute,

operating)

SVRR 5 half supply voltage, decoupling ripple

rejection

SELECT 6 input for selection of operating channel

n.c. 7 not connected

OUT2+ 8 positive loudspeaker terminal,

channel 2

n.c. 9 not connected

GND2 10 ground, channel 2

VCC2 11 supply voltage, channel 2

n.c. 12 not connected

OUT2−13 negative loudspeaker terminal,

channel 2

IN2−14 negative input, channel 2

IN2+ 15 positive input, channel 2

IN1+ 16 positive input, channel 1

IN1−17 negative input, channel 1

OUT1−18 negative loudspeaker term inal,

channel 1

n.c. 19 not connec ted

VCC1 20 supply voltage, channel 1 Fig.2 Pin configuration.

handbook, halfpage

GND1

n.c.

OUT1+

MODE

SVRR

SELECT

n.c.

OUT2+

n.c.

GND2

VCC1

n.c.

OUT1−

IN1−

IN2+

IN2−

IN1+

OUT2−

n.c.

VCC2

10 11

TDA8547TS

MGK998

FUNCTIONAL DESCRIPTION

The TDA8547TS is a 2 ×0.7 W BTL audio power amplifier

capable of delivering 2 ×0.7 W output po we r to a 16 Ω

load at THD = 10% using a 5 V power supply. Using the

MODE pin the device can be switched to standby and

mute condition. The device is protected by an internal

thermal shutdo wn protection mechanism. The g ain can be

set within a range from 6 to 30 dB by external feedback

resistors.

Power amplifier

The power amplifier is a Bridge-Tied Load (BTL) amplifie r

with a complementary PNP-NPN output stage.

The voltage loss on the positive supply line is the

saturation voltage of a PNP power transistor, on the

negative side the sat ur ation voltage of a NPN power

transistor. The total voltage loss is <1 V and with a 5 V

supply voltage and a 16 Ω loudspeaker an output power of

0.7 W can be delivered, when two channels are operating.

If only one channel is operatin g then an output power of

1.2 W can be delivered (5 V, 8 Ω).

MODE pin

The whole device (both channels) is in the standby mode

(with a very low current consumption) if the voltage at the

MODE pin is >(VCC −0.5 V), or if this pin is floating. At a

MODE voltage level of less than 0.5 V the amplifier is fully

operational. In th e range between 1.5 V an d VCC −1.5 V

the amplifier is in mute condition. The mute condition is

useful to su ppress plop noise at the output caused by

charging of the input capacitor.

1998 Apr 01 5

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

SELECT pin

If the voltage at the SELECT pin is in the range between

1.5 V and VCC −1.5 V, or if it is kept floating, then both

channels can be operational. If the SELECT pin is set to a

LOW voltage or gr ounded, then only channel 2 can

operate and the power amplifier of channel 1 will be in the

standby mode. In this case o nly the loudspeaker at

channel 2 can operate and th e loudspeaker at channel 1

will be switched off. If the SELECT pin is set to a

HIGH level or connected to VCC, then only channel 1 can

operate and the power amplifier of channel 2 will be in the

standby mode. In this case o nly the loudspeaker at

channel 1 can operate and th e loudspeaker at channel 2

will be switched off. Setting the SELECT pin to a LOW or

a HIGH voltage results in a redu ction of quiesce nt curr ent

consumption by a fac tor of approximately 2.

Switching with the SELECT pin during operating is not

plop-free, beca use the input capacito r of the ch annel

which is coming out of standby needs to be charged first.

For plop-free channel selecting the device has first to be

set in mute condition with the MODE pin (between 1.5 V

and VCC −1.5 V), then set the SELECT pin to the new

level, after a delay set the MOD E pin to a LOW level.

The delay needed depends on the values of the input

capacitor and the feedback resistors. Time ne eded is

approx. 10 ×C1 ×(R1 + R2), so approximately 0.6 s. for

the values in Fig.4.

Table 1 Control pins MODE and SELECT versus status of output chan nels

Voltage levels at control p i ns at VP= 5 V; for other supply voltages see Figs. 1 4 and 15.

Notes

1. HIGH = Vpin >V

CC −0.5 V.

2. NC = not connected or floating.

3. X = don’t care.

4. HVP = 1.5 V < Vpin <V

CC −1.5 V.

5. LOW = Vpin <0.5V.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

CONTROL PIN STATUS OF OUTPUT

CHANNEL TYP. Iq

(mA)

MODE SELECT CHANNEL 1 CHANNEL 2

HIGH(1)/NC(2) X(3) standby standby 0

HVP(4) HVP(4)/NC(2) mute mute 15

LOW(5) HVP(4)/NC(2) on on 15

HVP(4)/LOW(5) HIGH(1) mute/on standby 8

HVP(4)/LOW(5) HVP(4)/NC(2) mute/on mute/on 15

HVP(4)/LOW(5) LOW(5) standby mute/on 8

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCC supply voltage operating −0.3 +18 V

VIinput voltage −0.3 VCC +0.3 V

IORM repetitive peak output current −1A

Tstg storage temperature −55 +150 °C

Tamb operating ambient temperature −40 +85 °C

VPsc AC and DC short-circuit safe voltage −10 V

Ptot power dissipation −1.1 W

1998 Apr 01 6

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

QUALITY SPECIFICATION

In accordance with “SNW-FQ-611-E”.

THERMAL CHARACTE RISTICS

Table 2 Maximum ambient temperature at different conditions

Note

1. At THD = 10 %.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient in free air 110 K/W

VCC

(V) RL

(Ω)APPLICATION Po

(W)(1)

CONTINUOUS SINE WAVE DRIVEN

Pmax

(W) Tamb(max)

(°C)

3.3 4 1 channel 1.2 0.58 86

3.3 4 2 channels 2 ×1.2 1.12 27

3.3 8 1 channels 0.6 0.3 117

3.3 8 2 channels 2 ×0.6 0.60 84

5 8 1 channel 1.2 0.67 76

5 8 2 channels 2 ×1.2 1.33 −

5 16 1 channel 0.7 0.35 112

5 16 2 channels 2 ×0.7 0.70 73

Fig.3 Power derating curve.

handbook, halfpage

0 40 80 160

2.0

120

1.6

1.2

0.8

0.4

MGK987

Tamb (°C)

(W)

1998 Apr 01 7

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

DC CHARACTERISTICS

VCC =5V; T

amb =25°C; RL=8Ω; VMODE = 0 V; gain = 20 dB; measured in BTL application circuit Fig.4; unless

otherwise specified.

Notes

1. Measured with RL=∞. With a load connected at the outputs the quiescent current will increas e, the maximum of this

increase being equal to the DC output offset voltage divide d by RL.

2. The DC output voltage with respect to ground is approximately 0.5VCC.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCC supply voltage operating 2. 2 5 18 V

Iqquiescent current BTL 2 channels;

note 1 −15 22 mA

BTL 1 channel;

note 1 −812mA

Istb standby current VMODE =V

CC −−10 μA

VODC output voltage note 2 −2.2 −V

⎪VOUT+ −VOUT−⎪differential output voltage

offset −−50 mV

IIN+, IIN−input bias current −−500 nA

VMODE input voltage MODE pin operating 0 −0.5 V

mute 1.5 −VCC −1.5 V

standby VCC −0.5 −VCC V

IMODE input curren t MODE pin 0 V < VMODE <V

CC −−20 μA

VSELECT input voltage SEL E CT pin channel 1 = standby;

channel 2 = on 0−1V

channel 1 = on;

channel 2 = standby VCC −1−VCC V

ISELECT input current SELECT pin VSELECT =0V −−100 μA

1998 Apr 01 8

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

AC CHARACTERISTICS

VCC =5V; T

amb =25°C; RL=8Ω; f = 1 kHz; VMODE = 0 V; gain = 20 dB; measured in BTL application circuit Fig.4;

unless otherwise sp ecified.

Notes

1. Gain of the amplifier is in BTL application circuit Fig.4.

2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a

source impedance of RS=0Ω at the input.

3. Supply voltage ripple rejection is measured at th e output, with a source impedance of RS=0Ω at the input.

The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to

the positive supply rail.

4. Supply voltage ripple rejection is measured at th e output, with a source impedance of RS=0Ω at the input.

The ripple vo ltage is a sine wave with a f requency betw een 100 Hz and 20 kHz and an amplitud e of 100 mV (RMS),

which is applied to the positive supply rail.

5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 Hz to 20 kHz,

so including noise.

6. Channel separation is measured at the output with a source impedance of RS=0Ω at the input and a frequency of

1 kHz. The output power in the operating channel is set to 0.5 W.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Pooutput power, one channel THD = 10% 1 1.2 −W

THD = 0.5% 0.6 0.9 −W

THD total harmonic distortion Po=0.4W −0.15 0.3 %

Gvclosed loop voltage gain note 1 6 −30 dB

Zidifferential input impedance −100 −kΩ

Vno noise output voltage note 2 −−100 μV

SVRR supply voltage ripple rejection note 3 50 −−dB

note 4 40 −−dB

Vooutput voltage note 5 −−200 μV

αcs channel separation VSELECT =0.5V

CC; note 6 40 −−dB

2R2

--------

1998 Apr 01 9

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

TEST AND APPLICATION INFORMATION

Test conditions

Because the application can be either Bridge-Tied Load

(BTL) or Single-Ended (SE) , the curves of each

application are shown separately.

The thermal resistance = 110 K/W for the SSOP20; the

maximum sine wave power dis sip ation for Tamb =25°C

is:

For Tamb =60°C the maximum total power dissipation is:

Thermal Design Considerations

The ‘measured’ therma l res i stance of the IC packag e is

highly depend ent on the configura tion and size of the

application boar d. Data may not be comp arable between

different Semiconductor manufacturers because the

application boards an d test methods are not (y et)

standardized. Also, the thermal performance of packages

for a specific application may be differ ent than prese nted

here, because the configuration of the application boards

(copper area!) may be different. NXP Semiconductors

uses FR-4 type application boards with 1 oz copper

traces with solder coating.

The SSOP package has improved thermal conductivity

which reduces the thermal resistan ce. Using a practic al

PCB layout (see Fig.24) with wider copper tracks to the

corner pins and just under the IC, the thermal resistance

from junction to ambient can be reduced to about 80 K/W.

For Tamb =60°C the maximum total power dissipation at

this PCB layout is:

Please note that this two channel IC is mentioned for

application with only one channel active. For that reason

the curves for worst case power dissipation are given for

the condition of only one of the both channels driven with

a 1 kHz sine wave signal.

BTL application

Tamb =25°C if not specially mentioned, VCC =5V,

f=1kHz, R

L=8Ω, Gv= 20 dB, audio band-pass

22 Hz to 22 kHz.

The BTL application circuit is illustrated in Fig.4.

150 25–

110

---------------------- 1.14 W=

150 60–

110

---------------------- 0.82 W=

150 60–

---------------------- 1.12 W=

The quiescent curr ent has been measured without any

load impedance and both channels drive n. When one

channel is active the quiescent current will be halved.

The total harmonic distortion as a function of frequency

was measured us ing a low-pass filter of 80 kHz.

The value of capacitor C3 influences the behaviour of the

SVRR at low frequencies: increasing the value of C3

increases the performance of the SVRR.

The figure of the MODE voltage (VMODE) as a function of

the supply vo ltage shows three areas; operating, mute

and standby. It shows, that the DC-switching levels of the

mute and standb y respectively depend on the supply

voltage level. The figure of the SELECT voltage (VSELECT)

as a function of the supp ly voltage shows the voltage

levels for switching the channels in the active, mute or

standby mode.

SE application

Tamb =25°C if not specially mentioned, VCC =7.5V,

f=1kHz, R

L=4Ω, Gv= 20 dB, audio band-pass

22 Hz to 22 kHz.

The SE application circuit is illustrated in Fig.16.

Increasing the value of electrolytic capacitor C3 will result

in a better channel s ep ar at i on . Because the positi ve

output is not designed for high output current (2 ×Io) at

low load impedance (≤16 Ω), the SE application with

output capacito rs connected to ground is advised.

The capacitor value of C6/C7 in combination with the load

impedance deter mines the low fr equency behaviour.

The THD as a fun ction of frequ ency was measur ed using

a low-pass filter of 80 kHz. The value of capacitor C3

influences the behaviour of the SVRR at lo w frequencies:

increasing th e value of C3 increases the performance of

the SVRR.

General remark

The frequency characteristic can be adap ted by

connecting a small capacitor across the feedback

resistor. To imp rove the immunit y to HF radiati on in radi o

circuit applications, a small capacitor can be connected in

parallel with the fe edba ck re sist or (56 kΩ); this creates a

low-pass filter.

1998 Apr 01 10

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

BTL APPLICATION

Fig.4 BTL application.

handbook, full pagewidth

MGK985

VCC

Vi1

OUT1−

IN1−

IN1+

OUT1+

100 nF C5

100 μF

20 11

110

TDA8547TS

OUT2−

GND

RL1

IN2−14

IN2+

SVRR 15

MODE

SELECT

OUT2−

OUT2+

RL2

47 μF

1 μF

1 μFR1

10 kΩ

50 kΩ

Vi2

Gain channel 1 2 R2

--------

×=

Gain channel 2 2 R4

--------

×=

Fig.5 Iq as a function of VCC.

RL=∞.

handbook, halfpage

(mA)

VCC (V)

0420

81216

MGD890

Fig.6 THD as a function o f Po.

f=1kHz; G

v=20dB.

(1) VCC =5V; R

L=8Ω.

handbook, halfpage

THD

(%)

10−2

10−1

MGK988

10−210−11Po (W) 10

(1)

1998 Apr 01 11

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

Fig.7 THD as a function of frequency.

Po=0.5W; G

v=20dB.

(1) VCC =5V; R

L=8Ω.

handbook, halfpage

−1

−2

MGK989

10 10

THD

(%)

f (Hz) 10

(1)

Fig.8 Channel separation as a function of

frequency.

VCC =5V; V

o=2V; R

L=8Ω.

(1) Gv=30dB.

(2) Gv=20dB.

(3) Gv=6dB.

ndbook, halfpage

−100

−90

−80

−70

−60 MGK699

10 102103104105

f (Hz)

αcs

(dB) (1)

(2)

(3)

Fig.9 SVRR as a function of frequency.

VCC =5V; R

S=0Ω; Vr= 100 mV.

(1) Gv=30dB.

(2) Gv=20dB.

(3) Gv=6dB.

handbook, halfpage

−80

−60

−40

−20 MGD894

10 10

SVRR

(dB)

f (Hz)

(1)

(2)

(3)

Fig.10 Po as a function of VCC.

THD = 10%.

(1) RL=8Ω.

(2) RL=16Ω.

handbook, halfpage

048

(W)

VCC (V) 12

1.5

(1) (2)

0.5

MGK990

1998 Apr 01 12

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

Fig.11 Worst case power dissipation as a function

of VCC (one channel active).

(1) RL=8Ω.

(2) RL=16Ω.

handbook, halfpage

1.5

(1) (2)

1.0

VCC (V)

0.5

04812

MGK991

(W)

Fig.12 Power dissipation as a func tion of Po

(one channel active).

Sine wave of 1 kHz.

(1) VCC =5V; R

L=8Ω.

handbook, halfpage

(1)

0.5

1.5

00.5 1 1.5

Po (W)

MGK992

(W)

Fig.13 Vo as a function of VMODE.

Band-pass = 22 Hz to 22 kHz.

(1) VCC =3V.

(2) VCC =5V.

(3) VCC =12V.

handbook, halfpage

10−2

10−1

10−3

10−4

10−6

10−5

MGL211

10−11

(V)

VMODE (V)

10 102

(1) (2) (3)

Fig.14 VMODE as a fu nction of VP.

handbook, halfpage

048

VMODE

(V)

12 V

(V)

MGL210

operating

mute

standby

1998 Apr 01 13

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

Fig.15 VSELECT as a function of VP.

handbook, full pagewidth

02468 12141618

MGK700

channel 2

standby

channel 1

standby

channel 2

channel 1

channel 1 + 2

VP (V)

VSELECT

(V)

SE APPLICATION

Fig.16 SE application.

handbook, full pagewidth

MGK986

VCC

Vi1 OUT1−

IN1−

IN1+

OUT1+

100 nF

470 μF

100 μF

20 11

110

TDA8547TS

OUT2−

GND

RL1

RL2

IN2−14

IN2+

SVRR 15

MODE

SELECT

OUT2−

OUT2+

47 μF

1 μF

1 μFR1

10 kΩ

100 kΩ

Vi2

Gain channel 1 R2

--------

Gain channel 2 R4

--------

1998 Apr 01 14

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

Fig.17 THD as a function of Po.

f=1kHz; G

v=20dB.

(1) VCC =7.5V; R

L=4Ω.

(2) VCC =9V; R

L=8Ω.

(3) VCC =12V; R

L=16Ω.

handbook, halfpage

Po (W)

THD

(%)

10−1

10−2

MGD899

10−210−11

(1)

(2)

(3)

Fig.18 THD as a function of frequency.

Po=0.5W; G

v=20dB.

(1) VCC =7.5V; R

L=4Ω.

(2) VCC =9V; R

L=8Ω.

(3) VCC =12V; R

L=16Ω.

handbook, halfpage

THD

(%)

f (Hz)

10−1

10−2

MGD900

10 102103104105

(1)

(2)

(3)

Fig.19 Channel separ ation as a function of

frequency.

Vo=1V; G

v=20dB.

(1) VCC =7.5V; R

L=4Ω.

(2) VCC =9V; R

L=8Ω.

(3) VCC =12V; R

L=16Ω.

(4) VCC =5V; R

L=32Ω.

handbook, halfpage

−100

−80

−60

−40 MGK993

(1)

102103104f (Hz) 105

(3)

(4)

(2)

αcs

(dB)

Fig.20 SVRR as a function of frequency .

VCC =7.5V; R

L=4Ω; RS=0Ω; Vr=100mV.

(1) Gv=24dB.

(2) Gv=20dB.

(3) Gv=0dB.

handbook, halfpage

−80

−60

−40

−20 MGD902

10 102103

SVRR

(dB)

f (Hz)

104105

(1)

(2)

(3)

1998 Apr 01 15

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

Fig.21 Po as a function of VCC.

THD = 10%.

(1) RL=4Ω.

(2) RL=8Ω.

(3) RL=16Ω.

handbook, halfpage

(1) (2) (3)

(W)

VCC (V)16

1.6

1.2

0.8

0.4

MGK994

Fig.22 Worst case power dissipation as a function

of VCC (one channel active).

(1) RL=4Ω.

(2) RL=8Ω.

(3) RL=16Ω.

handbook, halfpage

1.5

1.0

VCC (V)

0.5

048

(1) (2) (3)

1612

MGK995

(W)

Fig.23 Power dissipation as a func tion of Po

(one channel active).

Sine wave of 1 kHz.

(1) VCC =12V; R

L=16Ω.

(2) VCC =7.5V; R

L=4Ω.

(3) VCC =9V; R

L=8Ω.

handbook, halfpage

(2)

(1)

(3)

1.2

0.8

0.4

00.4 0.8 1.6

1.2

(W)

Po (W)

MGK996

1998 Apr 01 16

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

handbook, full pagewidth

−OUT1 +OUT1

−OUT2 +OUT2

+VCC

IN1

IN2 CIC

Nijmegen

MODE

11 10

GND TDA

8542TS

8547TS

SELECT

11 kΩ

10 kΩ

11 kΩ

56 kΩ

1 μF

47 μF

100 μF

100 nF

TDA

8542/47TS

MGK997

Fig.24 Printed- circ uit board layout (BTL).

b. Top view components layout.

a. Top view copper lay out.

1998 Apr 01 17

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

PACKAGE OUTLINE

UNIT A1A2A3bpcD

(1) E(1) (1)

ELL

pQZywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.15

01.4

1.2 0.32

0.20 0.20

0.13 6.6

6.4 4.5

4.3 0.65 1 0.2

6.6

6.2 0.65

0.45 0.48

0.18 10

0.13 0.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

0.75

0.45

SOT266-1 MO-152 99-12-27

03-02-19

detail X

vMA

(A )

0.25

110

20 11

pin 1 index

0 2.5 5 mm

scale

SOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266

-1

max.

1.5

1998 Apr 01 18

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

SOLDERING

Introduction

There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when

through-hole and surface mounted components are mixed

on one printed-circuit board. However, wave soldering is

not always suitable for surface mounted ICs, or for

printed-circuits with high population densities. In these

situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.

A more in-depth acco un t of sold er ing ICs can be found in

our “IC Package Databook” (order cod e 9398 652 90011).

DIP

SOLDERING BY DIPPING OR BY WAVE

The maximum permissible temperatur e of the s old er is

260 °C; solder at this temperature must not be in contact

with the joint for more than 5 seconds. The total contact

time of successive solder waves must not exceed

5 seconds.

The device may be mounted up to the seating plane, but

the temperature of the plastic bod y mus t not ex ceed the

specified maximum storage temperature (Tstg max). If the

printed-circuit board has been pre-heated, forced cooling

may be necessary immediately after soldering to keep the

temperature with in the permissible limit.

REPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the

lead(s) of the package, below the seating plane or not

more than 2 mm above it. If the temperature of the

soldering iron bit is less than 300 °C it may remain in

contact for up to 10 seconds . If the bit temper ature is

between 300 and 400 °C, contact may be up to 5 seconds.

REFLOW SOLDERING

Reflow soldering techniques are suitable for all SO

packages.

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

to the printed-circuit board by screen printing, stencilling or

pressure-s yringe dispensing before package placement.

Several techniques exist for reflowing; for example,

thermal conduction by heated belt. Dwell times vary

between 50 and 300 seconds dependin g on heating

method. Typical reflow temperatures range from

215to250°C.

Preheating is necessary to dry the paste and evapor ate

the binding agent. Preheating dura tio n: 45 minutes at

45 °C.

WAVE SOLDERING

Wave soldering techniques can be used for all SO

packages if the following conditions are observ ed:

•A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave) soldering

techniqu e sh ould be used.

•The longitudinal ax is of the package foo tprint must be

parallel to the solder flow.

•The package footprint must incorporate solder thieves at

the downstream end.

During placement and before soldering, the package must

be fixed with a droplet of adh esive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Maximum permissible solder temp erature is 260 °C, and

maximum duration of pack age immersion in solder is

10 seconds, if cooled to less than 150 °C within

6 seconds. Typical dwell time is 4 seconds at 25 0 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

REPAIRING SOLDERED JOINTS

Fix the component by first so ldering two diagonally-

opposite end leads. Use only a low voltage solder in g iron

(less than 24 V) applied to the flat part of the lead. Contact

time must be limit ed to 10 seconds at up t o 300 °C. When

using a dedicated tool, all other leads can be soldered in

one operatio n wi th in 2 to 5 seconds bet we en

270 and 320 °C.

1998 Apr 01 19

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or co mpleting a design.

2. The product s ta tus of device(s) described in this do cument may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective s pecification for product

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product s pecification.

DISCLAIMERS

Limited warranty and liability ⎯ Information in this

document is believed to be accurate and reliable.

However, NXP Semiconduc tors does not give any

representations or warranties, expressed or implied, as to

the accuracy or completeness of such information and

shall have no liability for the consequences of use of such

information.

In no event shall NXP Semiconductors be liable for any

indirect, incidental, punitive, special or consequential

damages (including - without limitation - lost profits, lost

savings, busin es s interru ption, costs related to the

removal or replacement of any products or rework

charges) whether or not such damages are based on tort

(including negligence), warranty, breach of contract or any

other legal theory.

Notwithstanding any damages that customer might incur

for any reason whatsoever, NXP Semiconductors’

aggregate and cu mulative liability towards customer for

the products described herein shall be limited in

accordance with the Terms and conditio ns of commercial

sale of NXP Semiconductors.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconduct ors pr oduc ts are

not designed, au thorized or warran ted to be suitable for

use in life support, life-critical or safety-critical systems or

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductor s pr oducts in such equi pme nt or

application s and therefor e such inclusion and / o r use is at

the customer’s own risk.

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of

their applications and products using NXP

Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or

customer product design. It is customer’s sole

responsibility to determine whether the NXP

Semiconductors pro du ct is su itable and fit for the

customer’s applications and products planned, as well as

for the planned a pplication and use of custom er’s third

party customer(s). Customers should provide appropriate

design and opera t ing saf eg ua rd s to minimize the risks

associated with their applications and products.

NXP Semiconduc tors does n ot a ccept any liabil ity rela ted

to any default, damage, costs or problem which is based

on any weakne ss or default in t he customer’s applic ations

or products, or the application or use by customer’s third

party customer( s) . C us to m er is responsible for doing all

necessary testing for the customer’s applications and

products using NXP Semiconductors products in order to

avoid a default of the applic ations and the products or of

the application or use by customer’s third party

customer(s). NXP does not accept any liability in this

respect.

1998 Apr 01 20

NXP Semiconductors Product specification

2×0.7 W BTL audio amplifier with

output channel switching TDA8547TS

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) will cause permanent damage to

the device. Limiting values are stress ratings only and

(proper) operation of the device at these or any other

conditions abo ve those given in th e Recommended

operating conditions section (if present) or the

Characteristics sections of this document is not warranted.

Constant or repeated exposure to limiting values will

permanently and irreversibly affect the qua l ity and

reliability of the device.

Terms and conditions of commercial sale ⎯ NXP

Semiconductors products are sold subject to the general

terms and conditio ns of commercial sale, as published at

http://www.nxp.com/profile/terms, unless other wise

agreed in a valid written ind i vidual agreement. In case an

individual agreeme nt is co nc luded only the terms and

conditions of the resp ective agreement shall apply. NXP

Semiconductors hereby expressly objects to applying the

customer’s general terms and conditions with regard to the

purchase of NXP Semicon ductors products by customer.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for acceptance or the grant, conveyan ce or

implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)

described he re in may be subject to export control

regulations. Export might require a prior authorization from

national auth or itie s.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

Non-automotive qualified products ⎯ Unless this data

sheet expressly states that this specific NXP

Semiconductors product is au tomotive qualified, the

product is not suitable for automotive use. It is neither

qualified nor te sted in accordanc e with automot ive testing

or application requirements. NXP Semiconductors accepts

no liability for inclusion and/or use of non-automotive

qualified prod ucts in automotive eq uip ment or

applications.

In the event that customer uses the product for design-in

and use in automotive applications to automotive

specifications and standards, customer (a) shall use the

product without NXP Semiconductors’ warranty of the

product for such au t omo tive application s, use and

specifications, and (b) whenever customer uses the

product for automotive applications beyond NXP

Semiconductors’ specifications such use shall be solely at

customer’s own ris k, and (c) customer fully inde m nifies

NXP Semiconductors for any liability, damages or failed

product clai ms r esult ing fr om custo mer desi gn an d us e o f

the product for automotive ap plic ations beyond NXP

Semiconductors ’ st andard warranty and NXP

Semiconductors’ product specifications.

NXP Semiconductors

provides High Performance Mixed Signal and Standard Product

solutions that leverage its leading RF, Analog, Power Management,

Interface, Security and Digital Processing expertise

Contact information

For additional information p lease visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this documen t d oes not form part o f an y q uot ation or contract, is b elieve d to be accurate a nd re li a ble and may be change d

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other ind ustrial or intellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the tech nical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands 545102/00/02/pp21 Date of releas e : 1998 Apr 01 Document order number: 9397 750 03347