BAT46W
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88140 www.vishay.com
10-May-02 1
Schottky Diode
.022 (0.55)
.112 (2.85)
.152 (3.85)
.067 (1.70)
.053 (1.35)
max.
.010 (0.25)
min.
Cathode Band
.006 (0.15)
max.
Top View
.140 (3.55)
.100 (2.55)
.055 (1.40)
.004 (0.1)
max.
Dimensions in inches
and (millimeters)
Mechanical Data
Case: SOD-123 Plastic Package
Weight: approx. 0.01g
Marking Code: L6
Packaging Codes/Options:
D3/10K per 13” reel (8mm tape), 30K/box
D4/3K per 7” reel (8mm tape), 30K/box
SOD-123
0.094 (2.40) 0.055 (1.40)
0.055 (1.40)
Features
• For general pur pose applications
• This diode features very low turn-on voltage and
fast switching.
• This device is protected by a PN junction guard ring
against excessive voltage, such as electrostatic
discharges.
• This diode is also available in the DO-35 case
with the type designation BAT46 and in the
MiniMELF case with the type designation LL46.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 100 V
Forward Continuous Current at Tamb = 25°CI
F150(1) mA
Repetitve Peak Forward Current IFRM 350(1) mA
at tp< 1s, δ< 0.5, Tamb = 25°C
Surge Forward Current at tp< 10ms, Tamb = 25°CI
FSM 750(1) mA
Power Dissipation(1) at Tamb = 65°CP
tot 150(1) mW
Thermal Resistance Junction to Ambient Air RΘJA 300(1) °C/W
Junction Temperature Tj125 °C
Ambient Operating Temperature Range Tamb –55 to +125 °C
Storage Temperature Range TS–55 to +150 °C
Note: (1) Valid provided that electrodes are kept at ambient temperature
Mounting Pad Layout
BAT46W
Vishay Semiconductors
for mer ly General Semiconductor
www.vishay.com Document Number 88140
210-May-02
Electrical Characteristics (TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R IR = 100µA (pulsed) 100 ——V
VR = 1.5V ——0.5
VR = 1.5V, Tj= 60°C——5.0
VR = 10V ——0.8
Leakage Current(1) IRVR = 10V, Tj = 60°C——7.5 µA
VR = 50V ——2.0
VR = 50V, Tj = 60°C——15
VR = 75V ——5.0
VR = 75V, Tj = 60°C——20
IF = 0.1mA ——0.25
F orward Voltage(1) VFIF = 10mA ——0.45
IF = 250mA ——1.00 V
Capacitance Ctot VR= 0V, f = 1MHz —10 —pF
VR= 1V, f = 1MHz —6—
Note: (1) Pulse Test tp< 300µs, δ< 2%
