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Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 9 13 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
IC(on) VGE = 15 V, VCE = 10 V 65 A
Cies 1800 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 1 60 p F
Cres 45 pF
Qg75 90 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 20 30 nC
Qgc 35 50 nC
td(on) 100 ns
tri 200 ns
td(off) 450 ns
tfi 24N60 500 ns
24N60A 275 ns
Eoff 24N60A 2.0 mJ
td(on) 100 ns
tri 200 ns
Eon 1.2 mJ
td(off) 475 ns
tfi 24N60 600 ns
24N60A 450 ns
Eoff 24N60 4 mJ
24N60A 3 mJ
RthJC 0.83 K/W
RthCK 0.25 K/W
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = 10 W
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = 10 W
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
IXSH 24N60
IXSH 24N60A
TO-247 AD (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025