HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004. 06.18
Page No. : 1/4
HBF421 HSMC Product Specification
HBF421
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Video B-class Power stages in TV-receivers
Absolute Maximum Ratings
Maximum Temperatures
Storage Te mperature........................................................................................................................... -55 ~ +150 °C
Junction Temperature........................................................................................................... ........ +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................................... 830 mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage........................................................................................................................ -300 V
VCEO Collector to Emitter Voltage ..................................................................................................................... -300 V
VEBO Em itter to Base Voltage............................................................................................................................... -5 V
IC Collector Current ........................................................................................................................................ -50 mA
IBM Peak Base Current ................................................................................................................................... -50 mA
ICM Peak Collector Current ........................................................................................................................... -100 mA
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -300 - - V IC=-100uA, IE=0
BVCEO -300 - - V IC=-1mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -100 nA VCB=-200 V, IE=0
IEBO - - -100 nA VEB=-5V, IE=0
*VCE(sat) ---0.6VI
C=-30mA, IB=-3mA
*hFE 50 - - VCE=-20 V, IC=-25mA
fT60 - - MHz IE=-10mA, VCE=-10V, f=100MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
TO-92
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004. 06.18
Page No. : 2/4
HBF421 HSMC Product Specification
Characteristics Curve
Curren t Gain & Collect or Cur ren t
100
1000
1 10 100
Collector Curren t-I
C
(mA)
hFE
hFE @ VCE=20V
25oC
75oC
125oC
Satur ation Volta ge & Collector Cu rr ent
10
100
1000
1 10 100
Collector Curren t-I
C
(mA)
Sat u r ation Volt ag e ( mV)
25
o
C75
o
C
125
o
C
V
CE(sat)
@ I
C
=6I
B
Satur ation Volta ge & C ollect or Cur rent
10
100
1000
1 10 100
Collec tor Current- I
C
(mA)
Saturation Voltage (mV)
25oC
75oC
125oC
VCE(sat) @ IC=10IB
Satur ation Voltage & C ollect or Curren t
100
1000
1 10 100
Collector Cur rent -I
C
(mA)
Saturation Voltage (mV)
25oC
75oC125oC
VBE(sat) @ IC=10IB
Capacitan ce & Reverse- B i ased Volt age
1
10
100
0.1 1 10 100
Re ver se Biased Voltage ( V)
Capacitan ce ( p F)
Cob
PD - Ta
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0 50 100 150 200
Amb ien t T em peratur e- Ta (
o
C )
PD(W), Power Dissipation
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004. 06.18
Page No. : 3/4
HBF421 HSMC Product Specification
TO-92 Dimension
TO-92 Taping Dimension
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its produc ts without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Pa rk Hsi n-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
31
A
D
B
C
Iα1
E
α2
α3
G
H
2
F
H2AH2A
H2H2 D2
A
H
W
W1
H3
H4
H1
L1
L
P2
P
P1
F1F2 D1 D
T2
T
T1
DIM Min. Max.
A 4.33 4.83
B 4.33 4.83
C 12.70 -
D 0.36 0.56
E-*1.27
F 3.36 3.76
G 0.36 0.56
H-*2.54
I-*1.27
α1-*5°
α2-*2°
α3-*2°
*: Typical, Unit: mm
3-Lead TO-92 Plastic Package
HSMC Package Code: A
DIM Min. Max.
A 4.33 4.83
D 3.80 4.20
D1 0.36 0.53
D2 4.33 4.83
F1,F2 2.40 2.90
H 15.50 16.50
H1 8.50 9.50
H2 - 1
H2A - 1
H3 - 27
H4 - 21
L-11
L1 2.50 -
P 12.50 12.90
P1 5.95 6.75
P2 50.30 51.30
T - 0.55
T1 - 1.42
T2 0.36 0.68
W 17.50 19.00
W1 5.00 7.00
Unit: mm
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
Control Code
Date Code
HF
421B
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Ep oxy resin family,
flammability solid burning class: UL94V-0
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004. 06.18
Page No. : 4/4
HBF421 HSMC Product Specification
Solderi ng Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidit y=65%±1 5%
2. Reflow soldering of surface-mount devices
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
oC/sec <3oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100oC
150oC
60~120 sec
150oC
200oC
60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
T ime mai n tained above:
- Temperature (TL)
- Ti me (tL)183oC
60~150 sec 217oC
60~150 sec
Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (tP)10~30 sec 20~40 sec
Ramp- down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245oC ±5oC 5sec ±1sec
Pb-Free de vic es . 260oC +0/-5oC5sec ±1sec
Figure 1: Temperature prof ile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25 t 25
o
C to Peak
Time
Temperature