HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004. 06.18
Page No. : 1/4
HBF421 HSMC Product Specification
HBF421
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Video B-class Power stages in TV-receivers
Absolute Maximum Ratings
• Maximum Temperatures
Storage Te mperature........................................................................................................................... -55 ~ +150 °C
Junction Temperature........................................................................................................... ........ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................................... 830 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage........................................................................................................................ -300 V
VCEO Collector to Emitter Voltage ..................................................................................................................... -300 V
VEBO Em itter to Base Voltage............................................................................................................................... -5 V
IC Collector Current ........................................................................................................................................ -50 mA
IBM Peak Base Current ................................................................................................................................... -50 mA
ICM Peak Collector Current ........................................................................................................................... -100 mA
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -300 - - V IC=-100uA, IE=0
BVCEO -300 - - V IC=-1mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -100 nA VCB=-200 V, IE=0
IEBO - - -100 nA VEB=-5V, IE=0
*VCE(sat) ---0.6VI
C=-30mA, IB=-3mA
*hFE 50 - - VCE=-20 V, IC=-25mA
fT60 - - MHz IE=-10mA, VCE=-10V, f=100MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
TO-92
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004. 06.18
Page No. : 2/4
HBF421 HSMC Product Specification
Characteristics Curve
Curren t Gain & Collect or Cur ren t
100
1000
1 10 100
Collector Curren t-I
C
(mA)
hFE
hFE @ VCE=20V
25oC
75oC
125oC
Satur ation Volta ge & Collector Cu rr ent
10
100
1000
1 10 100
Collector Curren t-I
C
(mA)
Sat u r ation Volt ag e ( mV)
25
o
C75
o
C
125
o
C
V
CE(sat)
@ I
C
=6I
B
Satur ation Volta ge & C ollect or Cur rent
10
100
1000
1 10 100
Collec tor Current- I
C
(mA)
Saturation Voltage (mV)
25oC
75oC
125oC
VCE(sat) @ IC=10IB
Satur ation Voltage & C ollect or Curren t
100
1000
1 10 100
Collector Cur rent -I
C
(mA)
Saturation Voltage (mV)
25oC
75oC125oC
VBE(sat) @ IC=10IB
Capacitan ce & Reverse- B i ased Volt age
1
10
100
0.1 1 10 100
Re ver se Biased Voltage ( V)
Capacitan ce ( p F)
Cob
PD - Ta
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0 50 100 150 200
Amb ien t T em peratur e- Ta (
o
C )
PD(W), Power Dissipation
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004. 06.18
Page No. : 3/4
HBF421 HSMC Product Specification
TO-92 Dimension
TO-92 Taping Dimension
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Pa rk Hsi n-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
31
A
D
B
C
Iα1
E
α2
α3
G
H
2
F
H2AH2A
H2H2 D2
A
H
W
W1
H3
H4
H1
L1
L
P2
P
P1
F1F2 D1 D
T2
T
T1
DIM Min. Max.
A 4.33 4.83
B 4.33 4.83
C 12.70 -
D 0.36 0.56
E-*1.27
F 3.36 3.76
G 0.36 0.56
H-*2.54
I-*1.27
α1-*5°
α2-*2°
α3-*2°
*: Typical, Unit: mm
3-Lead TO-92 Plastic Package
HSMC Package Code: A
DIM Min. Max.
A 4.33 4.83
D 3.80 4.20
D1 0.36 0.53
D2 4.33 4.83
F1,F2 2.40 2.90
H 15.50 16.50
H1 8.50 9.50
H2 - 1
H2A - 1
H3 - 27
H4 - 21
L-11
L1 2.50 -
P 12.50 12.90
P1 5.95 6.75
P2 50.30 51.30
T - 0.55
T1 - 1.42
T2 0.36 0.68
W 17.50 19.00
W1 5.00 7.00
Unit: mm
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
Control Code
Date Code
HF
421B
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Ep oxy resin family,
flammability solid burning class: UL94V-0
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004. 06.18
Page No. : 4/4
HBF421 HSMC Product Specification
Solderi ng Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidit y=65%±1 5%
2. Reflow soldering of surface-mount devices
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
oC/sec <3oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100oC
150oC
60~120 sec
150oC
200oC
60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
T ime mai n tained above:
- Temperature (TL)
- Ti me (tL)183oC
60~150 sec 217oC
60~150 sec
Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (tP)10~30 sec 20~40 sec
Ramp- down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245oC ±5oC 5sec ±1sec
Pb-Free de vic es . 260oC +0/-5oC5sec ±1sec
Figure 1: Temperature prof ile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25 t 25
o
C to Peak
Time
Temperature
