Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE350184C
K-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
Super low noise figure and high associated gain
NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz
Micro-X ceramic (84C) package
APPLICATIONS
20 GHz-band DBS LNB
Other K-band communication systems
ORDERING INFORMATION
Part Number Order Number Package Quantity Marking Supplying Form
NE350184C-T1 NE350184C-T1-A 1 kpcs/reel A
NE350184C-T1A NE350184C-T1A-A
84C (Pb-Free)
5 kpcs/reel
• 12 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE350184C
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Drain to Source Voltage VDS 4 V
Gate to Source Voltage VGS 3 V
Drain Current ID IDSS mA
Gate Current IG 80
µ
A
Total Power Dissipation Ptot Note 165 mW
Channel Temperature Tch +150 °C
Storage Temperature Tstg 65 to +150 °C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Document No. PG10584EJ01V0DS (1st edition)
Date Published November 2005 CP(K)
NE350184C
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter Symbol MIN. TYP. MAX. Unit
Drain to Source Voltage VDS 1 2 3 V
Drain Current ID 5 10 15 mA
Input Power Pin 0 dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Gate to Source Leak Current IGSO VGS = 3 V 10
µ
A
Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 15 70 mA
Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100
µ
A 0.2 2.0 V
Transconductance gm VDS = 2 V, ID = 10 mA 40 mS
Noise Figure NF VDS = 2 V, ID = 10 mA, f = 20 GHz 0.7 1.0 dB
Associated Gain Ga 11 13.5 dB
Data Sheet PG10584EJ01V0S
2
NE350184C
TYPICAL CHARACTERISTICS (TA = +25°C)
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
250
200
150
100
50
050 100 150 200 250
80
60
40
20
0
–2.0 –1.0 0
Drain Current I
D
(mA)
Gate to Source Voltage V
GS
(V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
DS
= 2 V
10 150 5 20 25 30
Drain Current I
D
(mA)
Minimum Noise Figure NF
min
(dB)
Associated Gain G
a
(dB)
ASSOCIATED GAIN vs. DRAIN CURRENT
MINIMUM NOISE FIGURE,
f = 20 GHz
V
DS
= 2 V
NF
min
G
a
V
DS
= 2 V
I
D
= 10 mA
NF
min
G
a
Drain Current I
D
(mA)
Drain to Source Voltage V
DS
(V)
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
100
20
40
60
80
01.0 2.0
V
GS
= 0 V
0.2 V
0.4 V
0.6 V
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
Frequency f (GHz)
Minimum Noise Figure NF
min
(dB)
Associated Gain G
a
(dB)
ASSOCIATED GAIN vs. FREQUENCY
MINIMUM NOISE FIGURE,
2.0
1.2
1.4
1.6
1.8
0.6
0.8
1.0
0.2
0.4
0.0
2.0
1.2
1.4
1.6
1.8
0.6
0.8
1.0
0.2
0.4
0.0
20
12
14
16
18
6
8
10
2
4
0
25
15
10
5
20
0
10 150 5 20 25 30
Remark The graphs indicate nominal characteristics.
Data Sheet PG10584EJ01V0S 3
NE350184C
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] [Device Parameters]
URL http://www.ncsd.necel.com/
Data Sheet PG10584EJ01V0S
4
NE350184C
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
13.0
2.07
84C Ver. 2
2.11 mm/R.P.
1.78
1.0
1.78
2.11 2.11 Reference Plane
(Calibration Plane)
Reference Plane
(Calibration Plane)
6.0
0.5
0.74
1.0
0.5
0.3 TH
φ
ZO = 50 ZO = 50
RT/duroid 5880/ROGERS
t = 0.254 mm
εr = 2.20
tan delta = 0.0009 @10 GHz
Data Sheet PG10584EJ01V0S 5
NE350184C
PACKAGE DIMENSIONS
84C (UNIT: mm)
L = 1.0±0.2 (All leads)
PIN CONNECTIONS
1. Source
2. Drain
3. Source
4. Gate
1.7 MAX.
0.1
L
1.78±0.2
1.78±0.2
0.5 TYP.
L
4
2
3
1
0.5 TYP.
A
Data Sheet PG10584EJ01V0S
6
NE350184C
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
Partial Heating Peak temperature (terminal temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10584EJ01V0S 7
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS Concentration Limit per RoHS
(values are not yet fixed) Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 1000 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
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