DATA SH EET
Product specification
Supersedes data of 1999 Apr 26 2001 Oct 26
DISCRETE SEMICONDUCTORS
BC847BPN
NPN/PNP general purpose
transistor
a
ndbook, halfpage
MBD128
2001 Oct 26 2
Philips Semiconductors Product specification
NPN/PNP general purpose transistor BC847BPN
FEATURES
•Low collector capacitance
•Low collector-emitter saturation voltage
•Closely matched current gain
•Reduces number of components and boardspace
•No mutual interference between the transistors.
APPLICATIONS
•General purpose switching and amplification.
DESCRIPTION
NPN/PNP transistor pair in an SC-88; SOT363 plastic
package.
MARKING
PINNING
TYPE NUMBER MARKING CODE
BC847BPN 13t
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
Fig.1 Simplified outline (SC-88; SOT363)
and symbol.
handbook, halfpage
132
4
56
Top view
MAM341
132
TR1 TR2
64
5
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter −50 V
VCEO collector-emitter voltage open base −45 V
VEBO emitter-base voltage open collector −5V
I
Ccollector current (DC) −100 mA
ICM peak collector current −200 mA
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤25 °C−200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
Per device
Ptot total power dissipation Tamb ≤25 °C; note 1 −300 mW
2001 Oct 26 3
Philips Semiconductors Product specification
NPN/PNP general purpose transistor BC847BPN
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp≤300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per device
Rth j-a thermal resistance from junction to ambient note 1 416 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
ICBO collector cut-off current IE= 0; VCB =30V −−15 nA
IE= 0; VCB =30V; T
j= 150 °C−−5µA
I
EBO emitter cut-off current IC= 0; VEB =5V −−100 nA
hFE DC current gain IC= 2 mA; VCE = 5 V 200 −450
VCEsat collector-emitter saturation
voltage IC= 10 mA; IB= 0.5 mA −−100 mV
IC= 100 mA; IB= 5 mA; note 1 −−300 mV
VBEsat base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −755 −mV
VBE base-emitter voltage IC= 2 mA; VCE =5V
TR1 NPN 580 655 700 mV
TR2 PNP 600 655 750 mV
Cccollector capacitance IE=i
e= 0; VCB = 10 V; f = 1 MHz
TR1 NPN −−1.5 pF
TR2 PNP −−2.2 pF
Ceemitter capacitance IC=i
c= 0; VEB = 500 mV; f = 1 MHz
TR1 NPN −11 −pF
TR2 PNP −10 −pF
fTtransition frequency IC= 10 mA; VCE = 5 V; f = 100 MHz 100 −−MHz
2001 Oct 26 4
Philips Semiconductors Product specification
NPN/PNP general purpose transistor BC847BPN
handbook, full pagewidth
0
300
100
200
MBH724
10−210−1
hFE
1IC (mA)
10 103
102
VCE = 5 V
TR1: NPN.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
300
200
100
400
MBH727
−10−2−10−1
hFE
−1IC (mA)
−10 −103
−102
VCE = −5 V
Fig.3 DC current gain, typical values.
TR2: PNP.
2001 Oct 26 5
Philips Semiconductors Product specification
NPN/PNP general purpose transistor BC847BPN
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT363 SC-88
wBM
b
p
D
e
1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT363
UNIT A1
max bpcDEe
1H
E
L
p
Qywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28
2001 Oct 26 6
Philips Semiconductors Product specification
NPN/PNP general purpose transistor BC847BPN
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of anyoftheseproducts,conveysnolicence or title
under any patent, copyright, or mask work right to these
products,andmakesnorepresentations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Oct 26 7
Philips Semiconductors Product specification
NPN/PNP general purpose transistor BC847BPN
NOTES
© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613514/03/pp8 Date of release: 2001 Oct 26 Document order number: 9397 750 08984
