SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 MARCH 94 FMMT4124 PARTMARKING DETAIL ZC E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 200 mA Power Dissipation at Tamb=25C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter SaturationVoltage Static Forward Current Transfer Ratio Transistion Frequency Output Capacitance Input Capacitance Noise Figure Small Signal Current Transfer SYMBOL V(BR)CBO MIN. 30 V(BR)CEO V(BR)EBO MAX. UNIT V CONDITIONS. IC=10A 25 V IC=1mA* 5 V IE=10A ICBO IEBO VCE(sat) 50 50 0.3 nA nA V VCB=20V VEB=3V IC=50mA, IB=5mA* VBE(sat) 0.95 V IC=50mA, IB=5mA* MHz pF pF dB IC=2mA, VCE=1V* IC=50mA, VCE=1V* IC=10mA, VCE=20V, f=100MHz VCB=5V, IE=0, f=140KHz VBE=0.5V, IE=0, f=140KHz IC=200A, VCE=5V, Rg=2k f=30Hz to 15KHz at 3dB points IC=2mA, VCE=1V, f=1KHz hFE fT Cobo Cibo N hfe 120 60 300 360 4 8 6 120 480 SWITCHING CHARACTERISTICS (at Tamb = 25C). PARAMETER Delay Time Rise Time Storage Time Fall Time SYMBOL td tr ts tf TYP. 24 13 125 11 UNIT ns ns ns ns CONDITIONS VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA VCC=3V, IC=10mA IB1=IB2=1mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%