TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 1
Product Data Sheet
August 5, 2008
18 - 20 GHz 5-Bit Phase Shifter TGP1439
Key Features and Performance
• 0.5um pHEMT Technology
• 18-20 GHz Frequency Range
• 3º Typical RMS Phase Shift Error
• -5 dB Typical Insertion Loss
• Control Voltage: -2.5 V to -5.0 V
• Compact 1.27 mm2 Die Area
Primary Applications
• Phased Arrays
• Satellite Communication Systems
The TriQuint TGP1439 is a 5-Bit Digital Phase
Shifter MMIC design using TriQuint’s proven 0.5 µm
Power pHEMT process to support a variety of K-Band
phased array applications including satellite
communication systems.
The 5-bit design utilizes a compact topology that
achieves a 1.27 mm2 die area, high performance and
good tolerance to control voltage variation
The TGP1439 provides a 5-Bit digital phase shift
function with a nominal -5 dB insertion loss and 3º
RMS phase shift error over a bandwidth of 18-20 GHz.
The TGP1439 requires a minimum of off-chip
components and operates with a -5.0 V to -2.5 V
control voltage range. Each device is RF tested on-
wafer to ensure performance compliance. The device
is available in chip form.
Note: Datasheet is subject to change without notice.
TGP1439 Typical RF Performance (Fixtured)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
17 18 19 20 21
Frequency (GHz)
Return Loss (dB)
Input
Output
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
17 18 19 20 21
Frequency (GHz)
Insertion Loss (dB)
-10
-5
0
5
10
15
20
25
30
35
40
Phase Shift Error (deg)
Insertion Loss
Phase Error
TGP1439 Typical RF Performance (Fixtured) TGP1439 Typical RF Performance (Fixtured)
-12
-9
-6
-3
0
3
6
9
12
0 4 8 1216202428
Phase State
Phase Shift Error (deg)
18 GHz
19 GHz
20 GHz
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 2
Product Data Sheet
RECOMMENDED MAXIMUM RATINGS
Symbol Parameter Value Notes
V-Control Voltage -8 V
I+Control Current 1 mA 3/
PDPower Dissipation 0.1 W
PIN Input Continuous Wave Power 20 dBm
TCH Operating Channel Temperature 150 °C1/, 2/
TMMounting Temperature (30 seconds) 320 °C
TSTG Storage Temperature -65 °C to 150 °C
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/ Total current for the entire MMIC
Electrical Characteristics
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Symbol Parameter Test Condition
Vctnl=0V / -2.5V
Limit
Min Nom Max
Units
IL Insertion Loss F = 18, 19, 20 GHz
States 0 and 31
-5.5 -4.6 -4.0 dB
IRL Input Return
Loss
F = 18, 19, 20 GHz
States 0 and 31
-16 -11 dB
ORL Output Return
Loss
F = 18, 19, 20 GHz
States 0 and 31
-14 -10dB
PS Phase Shift F = 18, 19, 20 GHz
State 31
342 344 350 deg
0
200
400
600
800
1000
1200
-5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0
19 GHz Reference State Insertion Loss (dB)
Number of Devices
TGP1439
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 3
Product Data Sheet
Typical Fixtured Performance Over the 18-20 GHz Band
0
200
400
600
800
1000
1200
1400
-5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0
19 GHz State 31 Phase Shift (deg)
Number of Devices
19 GHz State 31 Insertion Loss (dB)
Number of Devices
0
100
200
300
400
500
600
700
800
340 341 342 343 344 345 346 347 348 349 350
Parameter Unit -5.0 V -2.5 V
Mean Insertion Loss dB -4.9 -5.0
Mean Loss Flatness dB 0.3 0.6
Peak Amplitude Error dBpp 1.2 1.3
RMS Amplitude Error dB 0.25 0.30
Peak Phase Shift Error deg -3 / +7 -3 / +7
RMS Phase Shift Error deg 3.0 2.7
Loss Temp. Variation dB/°C -0.0048 -0.0052
Ave Input Return Loss dB -16 -15
Ave Output Return Loss dB -15 -15
TGP1439
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 4
Product Data Sheet
Mechanical Characteristics
Units: millimeters
Thickness: 0.1016
Chip size tolerance: +/- 0.0508
Vcntl = -5.0 V to -2.5 V
Passive device, RF IN and RF OUT designators for reference only
Bond Pad #1 (RF IN) 0.100 x 0.150
Bond Pad #2 (RF OUT) 0.100 x 0.150
Bond Pad #3 (180º Bit ON: V= Vcntl) 0.100 x 0.100
Bond Pad #4 (180º Bit ON: V= 0.0V) 0.100 x 0.100
Bond Pad #5 (90º Bit ON: V= Vcntl) 0.100 x 0.100
Bond Pad #6 (90º Bit ON: V= 0.0V) 0.100 x 0.100
Bond Pad #7 (45º Bit ON: V= Vcntl) 0.100 x 0.100
Bond Pad #8 (45º Bit ON: V= 0.0V) 0.100 x 0.100
Bond Pad #9 (22.5º Bit ON: V= Vcntl) 0.100 x 0.100
Bond Pad #10 (22.5º Bit ON: V= 0.0V) 0.100 x 0.100
Bond Pad #11 (11.25º Bit ON: V= Vcntl) 0.100 x 0.100
0.000
0.000
0.354
0.750
1.693
0.639
0.354
0.769
1.020
1.150
1.490
0.412
0.542
1.102
1.234
12
4
35
6810
7911
TGP1439
Note: To turn phase bits off, apply the opposite condition. For example to
turn Phase bit 180° OFF, Bond Pad 3 = 0.0V and Bond Pad 4 = Vcntl.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 5
Product Data Sheet
Chip Assembly and Bonding Diagram
Reflow process assembly notes:
•=AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
•=alloy station or conveyor furnace with reducing atmosphere
•=no fluxes should be utilized
•=coefficient of thermal expansion matching is critical for long-term reliability
•=storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
•=vacuum pencils and/or vacuum collets preferred method of pick up
•=avoidance of air bridges during placement
•=force impact critical during auto placement
•=organic attachment can be used in low-power applications
•=curing should be done in a convection oven; proper exhaust is a safety concern
•=microwave or radiant curing should not be used because of differential heating
•=coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
•=thermosonic ball bonding is the preferred interconnect technique
•=force, time, and ultrasonics are critical parameters
•=aluminum wire should not be used
•=discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
•=maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Recommend 500
Ω
ΩΩ
Ω
series resistance
on the control lines
TGP1439
