SPECIFICATIONS General ios PIC9OOO, DENS FTE COOL PTC9002 NPN Silicon Power Darlington Transistors 20 Amperes 750, 850 and 900 Volts FEATURES @ High Voltage Rating 900 Volts Sustaining @ Fast-Switching Capabilities/Fast Turn-Off Time Glass Passivated Die to Provide Excellent High Temperature Stability e@ Thermally Stable Structure for Reliability in Power Cycling No Parasitic Diode on Output Transistor APPLICATIONS High Voltage Switching Power Supplies @ Inverters/Regulators @ Deflection Circuits @ Pulse-Width-Modulated (PWM) System Control Circuitry Electrical The PTC 9000, PTC 9001 and PTC 9002, Powerlithic series of silicon NPN darlington transistors are designed for high voltage, high speed, high power switching applications. These high voltage darlington transistors are ideally suited for applications in switching power supplies, pulse-width-modulated regulators and inverter or converter circuits operating off 480 volt lines. 1.050 0.161 (4.09) nin _ 0.450 (11.43) (26.68) MAX. 0.151 (3.84) 0.195 [rmax. (e283) 0.250 (6.35) I 210 5.33 -190 4.83 DIA. ~ 0.675 (17.65)f 1.197 (30.40) 1.573 0.655 (16.64) 1.177 (29.90) (39.96) MAX. EMITTER BASE 0.225 (5.72)t | 0.205 (5.21) 0.440 (11.18)t __ 270 Conforms to JEDEC TO-3 { ] SEATING - | PLANE Ld nn Arora L__ 9.92 (8.13) MIN. 0.043 (1.09) 0.038 (0.97) Basic dimensions in inches. Dimensions shown in PARENTHESES are in millimeters. 0.420 (10.67) TMEASURED AT SEATING PLANE Package outline JEDEC TO-3 SERIES PTC 9000/9001/9002 Fast-Switching, High Voltage Darlingtons Absolute maximum ratings Description PTC 9000 PTC 9001 PTC 9002 Unit Conditions VCBO Collector-Base Voltage 800 900 950 Vv VCEO Collector-Emitter Voltage 800 900 950 V Ic Collector Current Continuous 20 A Ic Collector Current Peak 40 A IB Base Current - Continuous 10 A IB Base Current ~ Peak 15 A Pp Maximum Power Dissipation 125 Ww Tc = 25C Tj, Tstg Junction Operating and 65to +150 C Storage Temperature Range Measured 0.0625 + 0.0312 in. (1.588 Lead Temperature 300 Cc + 0.794 mm) from case for 10 sec. Electrical characteristics at TC = 25C (unless otherwise specified) Description Type Min. Max. Unit Conditions VCEO(sus) Collector-Emitter PTC 9000 750 V Ic = 1.0A Sustaining Voltage PTC 9001 "B50 V L = 2mH, PTC 9002 900 Vv See Figure 2 ICEO All 0.25 mA At rated Collector Voltage IEBO All 375 mA VEBO = 5.0V FRSOA _ Forward Bias All Safe Operating Area hee DC Current Gain @ All 20 Ic = 10A; VcE = 5V VCE(sat) Collector-Emitter 9 = 10A-Ip = Saturation Voltage B All 2.0 Vv Ic = 10A; 1p = 1.08 VBE(sat) Base-Emitter : _ Tp = Saturation Voltage All 2.5 Vv Ic = 104; Ip = 1.04 Switching characteristics resistive load Description Type Min. Max. Unit Conditions td Delay Time All 0.5 BS Vcc = 250V; Ic = 10A See ty Rise Time All 3.0 BS Ip] = 1.0A Ipg = 2.0A Figure 1 ts Storage Time All 6.0 BS VBE(off) = ~6V; PW 2 25u5 tf Fall Time All 3.0 BS DUTY CYCLE = 2% Therma! and mechanical characteristics Description Type Typ. Unit Conditions ReJc Thermal Resistance All 10 CAN Junction-to-Case , abe Wo 0.5 oz Approximate Weight All 14 gm Darlington Circuit All M PULSE TEST: PW = 300 ps, DUTY CYCLE = 2% Voc, *250V 5 reusyaeT aan av 1 REQUIRED |B1 BI SCOPE \ AND Ig2 - ] wl 100 ev FL | 3 ame vce hsbc o A Pog en el E al Bo LO a Ww | | tr tf< 10 ns = = xf | | 020 ! DUTY CYCLE 1% VaRy Ro TO OBTAIN THE 5 INPUT PULSE 135) VCEsus DESIRED IC LEVEL AND VARY a o - @ - ball VCE Rig TO GIVE THE DESIRED a \B2 AT V2 = -6V 9 Figure 1 Switching Circuit Figure 1a Switching Waveform Figure 2 Sustaining Voltage Test Circuit 271