COMCHIP Small Signal Transistor (NPN) www.comchiptech.com MMBT2222A Features NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. TO-236AB (SOT-23) .122 (3.1) .110 (2.8) Mechanical Data .016 (0.4) Case: SOT-23 Plastic Package Weight: approx. 0.008g Top View .056 (1.43) .052 (1.33) 3 Pin Configuration 1 = Base 2 = Emitter 3 = Collector 0.035 (0.9) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 2 .045 (1.15) .037 (0.95) 1 Mounting Pad Layout 0.079 (2.0) .016 (0.4) Dimensions in inches and (millimeters) 0.037 (0.95) 0.037 (0.95) Maximum Ratings & Thermal Characteristics Parameter .102 (2.6) .094 (2.4) .016 (0.4) Ratings at 25C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 600 mA Collector Current (1) Power Dissipation on FR-5 Board TA = 25C Derate above 25C Ptot 225 1.8 mW mW/C Power Dissipation on Alumina Substrate(2) TA = 25C Derate above 25C Ptot 300 2.4 mW mW/C RJA 556 417 C/W Junction Temperature Tj 150 C Storage Temperature Range TS -55 to +150 C Thermal Resistance Junction to Ambient Air FR-5 Board Alumina Substrate Notes: (1) FR-5 = 1.0 x 0.75 x 0.062 in. (2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Page 1 COMCHIP Small Signal Transistor (NPN) www.comchiptech.com Electrical Characteristics (T = 25C unless otherwise noted) Parameter Symbol J Test Condition Min Typ Max VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA TA = -55C VCE = 10 V, IC = 150 mA(1) VCE = 10 V, IC = 500 mA(1) VCE = 1.0 V, IC = 150 mA(1) 35 50 75 -- -- -- -- -- -- 35 -- -- 100 40 50 -- -- -- 300 -- -- V(BR)CBO IC = 10 A, IE = 0 75 -- -- V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA, IB = 0 40 -- -- V Emitter-Base Breakdown Voltage V(BR)EBO IC = 10 A, IC = 0 6.0 -- -- V Collector-Emitter Saturation Voltage(1) VCEsat IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA -- -- -- -- 0.3 1.0 V Base-Emitter Saturation Voltage(1) VBEsat IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.6 -- -- -- 1.2 2.0 V Collector Cut-off Current ICEX VEB = 3 V, VCE = 60 V -- -- 10 nA -- 10 nA ICBO VCB = 60 V, IE = 0 VCB = 50 V, IE = 0 V TA = 125C -- Collector Cut-off Current -- -- 10 A IBL VEB = 3 V, VCE = 60 V -- -- 20 nA IEBO VEB = 3 VDC, IC = 0 -- -- 100 nA fT VCE = 20 V, IC = 20 mA f = 100 MHz 300 -- -- MHz Output Capacitance Cobo VCB = 10 V, f = 1 MHz, IE = 0 -- -- 8 pF Input Capacitance Cibo VEB = 0.5 V, f = 1 MHz, IC = 0 -- -- 25 pF Noise Figure NF VCE = 10 V, IC = 100 A, RS = 1 k, f = 1 kHz -- -- 4.0 dB VCE = 10 V, IC = 1 mA f = 1 kHz 2 -- 8.0 VCE = 10 V, IC = 10 mA f = 1 kHz 0.25 -- 1.25 VCE = 10 V, IC = 1 mA, f = 1 kHz 50 -- 300 VCE = 10 V, IC = 10 mA, f = 1 kHz 75 -- 375 VCE = 10 V, IC = 1 mA, f = 1 kHz 50 75 -- -- 300 375 VCE = 10 V, IC = 1 mA, f = 1 kHz 5.0 -- 35 VCE = 10 V, IC = 10 mA, f = 1 kHz 25 -- 200 DC Current Gain hFE Collector-Base Breakdown Voltage (1) Base Cut-off Current Emitter Cut-off Current Current Gain-Bandwidth Product Input Impedance hie Small Signal Current Gain hfe Voltage Feedback Ratio hre Output Admittance hoe Unit -- k -- -- S Note: (1) Pulse Test: Pulse width 300 s - Duty cycle 2% Page 2 COMCHIP Small Signal Transistor (NPN) www.comchiptech.com Electrical Characteristics Parameter (TJ = 25C unless otherwise noted) Symbol Test Condition Min Typ Max Unit rb'CC IE = 20 mA, VCB = 20 V, f = 31.8 MHz -- -- 150 ps Delay Time (see fig. 1) td IB1 = 15 mA, IC = 150 mA, VCC = 30V, VBE = -0.5 V -- -- 10 ns Rise Time (see fig. 1) tr IB1 = 15 mA, IC = 150 mA, VCC = 30V, VBE = -0.5 V -- -- 25 ns Storage Time (see fig. 2) ts IB1 = IB2 = 15 mA, IC = 150 mA, VCC = 30V -- -- 225 ns Fall Time (see fig. 2) tf IB1 = IB2 = 15 mA, IC = 150 mA, VCC = 30V -- -- 60 ns Collector Base Time Constant Switching Time Equivalent Test Circuit Figure 1. Turn-ON Time 1.0 to 100 s, DUTY CYCLE 2% +30V 200 +16 V 0 C S* < 10 pF 1k -2 V Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope < 2 ns Figure 2. Turn-OFF Time 1.0 to 100 s, DUTY CYCLE 2% +30V 200 +16 V 0 C S* < 10 pF 1k -14 V < 20 ns -4 V Page 3