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May 2016
FDWS86369_F085 N-Channel PowerTrench® MOSFET
©2016 Fairchild Semiconductor Corporation
FDWS86369_F085 Rev. 1.0
www.fairchildsemi.com
1
N-Channel PowerTrench® MOSFET
80 V, 65 A, 7.5 mΩ
Features
Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 65 A
Typical Qg(tot) = 35 nC at VGS = 10V, ID = 65 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Wettable flanks for automatic optical inspection (AOI)
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol Parameter Ratings Units
VDSS Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage ±20 V
ID
Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 65 A
Pulsed Drain Current TC = 25°C See Figure 4
EAS Single Pulse Avalanche Energy (Note 2) 27 mJ
PD
Power Dissipation 107 W
Derate Above 25oC0.71W/
oC
TJ, TSTG Operating and Storage Temperature -55 to +175 oC
RθJC Thermal Resistance, Junction to Case 1.4 oC/W
RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) 50 oC/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDWS86369 FDWS86369_F085 Power56 13” 12mm 3000units
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 20uH, IAS = 52A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
Forcurrentpackagedrawing,pleaserefertotheFairchildweb‐
siteathttps://www.fairchildsemi.com/package‐drawings/PQ/
PQFN08M.pdf
FDWS86369_F085
FDWS86369_F085 N-Channel PowerTrench® MOSFET
©2016 Fairchild Semiconductor Corporation
FDWS86369_F085 Rev. 1.0
www.fairchildsemi.com2
Electrical Characteristics TJ = 25°C unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage ID = 250μA, VGS = 0V 80 - - V
IDSS Drain-to-Source Leakage Current VDS
= 8 0 V T J = 25oC --1μA
VGS = 0V TJ = 175oC (Note 4) - - 1 mA
IGSS Gate-to-Source Leakage Current VGS = ±20V - - ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA234V
RDS(on) Drain to Source On Resistance ID = 65A,
VGS= 10V
TJ = 25oC -5.97.5mΩ
TJ = 175oC (Note 4) - 12.2 15.5 mΩ
Ciss Input Capacitance VDS = 40V, VGS = 0V,
f = 1MHz
- 2470 - pF
Coss Output Capacitance - 400 - pF
Crss Reverse Transfer Capacitance - 14 - pF
RgGate Resistance f = 1MHz - 1.8 - Ω
Qg(ToT) Total Gate Charge VGS = 0 to 10V VDD = 64V
ID = 65A
-3546nC
Qg(th) Threshold Gate Charge VGS = 0 to 2V - 4.5 - nC
Qgs Gate-to-Source Gate Charge - 12.5 - nC
Qgd Gate-to-Drain “Miller“ Charge - 8 - nC
Switching Characteristics
Drain-Source Diode Characteristics
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
ton Turn-On Time
VDD = 40V, ID = 65A,
VGS = 10V, RGEN = 6Ω
- - 39 ns
td(on) Turn-On Delay - 15 - ns
trRise Time - 11 - ns
td(off) Turn-Off Delay - 24 - ns
tfFall Time - 8 - ns
toff Turn-Off Time - - 48 ns
VSD Source-to-Drain Diode Voltage ISD =65A, VGS = 0V - - 1.4 V
ISD = 32.5A, VGS = 0V - - 1.2 V
trr Reverse-Recovery Time IF = 65A, dISD/dt = 100A/μs
VDD = 64V
-4974ns
Qrr Reverse-Recovery Charge - 44 68 nC
FDWS86369_F085 N-Channel PowerTrench® MOSFET
©2016 Fairchild Semiconductor Corporation
FDWS86369_F085 Rev. 1.0
www.fairchildsemi.com3
Typical Characteristics
Figure 1. Normalized Power Dissipation vs. Case
Temperature
0 25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
POWER DISSIPATION MULTIPLIER
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
25 50 75 1 00 125 150 175 20 0
0
20
40
60
80
100
CURRENT LIMITED
BY SI LICON
CURREN T LI MITED
BY PACKAGE
VGS = 10V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE(oC)
Figure 3.
10-5 10-4 10-3 10-2 10-1 100101
0.01
0.1
1
SINGLE PULSE
D = 0.50
0.20
0.10
0.05
0.02
0.01
NORMALIZED THERMAL
IMPEDANCE, ZθJC
t, RECTANGULAR PULSE DURATION(s)
DUTY CYCLE - DESCENDING ORDER
2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
PDM
t1
t2
Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
10-5 10-4 10-3 10-2 10-1 100101
10
100
1000
VGS = 10V
SINGLE PULSE
IDM
, PEAK CURRENT (A)
t, RECTANGULAR PULSE DURATION(s)
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
FDWS86369_F085 N-Channel PowerTrench® MOSFET
©2016 Fairchild Semiconductor Corporation
FDWS86369_F085 Rev. 1.0
www.fairchildsemi.com4
Figure 5.
0.1 1 10 100 500
0.01
0.1
1
10
100
1000
100us
1ms
10ms
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
100ms
Forward Bias Safe Operating Area
0.001 0.01 0.1 1 10 10 0
1
10
100
500
STARTING TJ = 150oC
STARTING TJ = 25oC
IAS, A VALA NCH E CU RREN T (A )
tAV, TIM E IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
2345678910
0
50
100
150
200
TJ = -55oC
TJ = 25oCTJ = 175oC
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VDD = 5V
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics Figure 8.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10
100
200
TJ = 25 oC
TJ = 175 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Forward Diode Characteristics
Figure 9.
012345
0
50
100
150
200
5V
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
80μs PULSE WIDTH
Tj=25oC
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Saturation Characteristics Figure 10.
012345
0
50
100
150
200
5V
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
80μs PULSE WIDTH
Tj=175oC
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Saturation Characteristics
Typical Characteristics
FDWS86369_F085 N-Channel PowerTrench® MOSFET
©2016 Fairchild Semiconductor Corporation
FDWS86369_F085 Rev. 1.0
www.fairchildsemi.com5
Figure 11.
45678910
0
20
40
60
80
100
ID = 65A PU LSE DU RAT ION = 80μs
DUTY CYCLE = 0.5% MAX
rDS( on) , DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
VGS , GATE TO SOURCE VOLTAGE (V)
TJ = 25oCTJ
= 175oC
RDSON vs. Gate Voltage Figure 12. Normalized RDSON vs. Junction
Temperature
-80 -40 0 40 80 120 160 200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 65A
VGS = 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ
, JUNCTION TEMPERATURE(oC)
Figure 13.
-80 -40 0 40 80 120 160 200
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS = VDS
ID = 250μA
NORMALIZED GATE
THRESHOLD VOLTAGE
TJ, JUNCTION TEMPERATURE(oC)
Normalized Gate Threshold Voltage vs.
Temperature
Figure 14.
-80 -40 0 40 80 120 160 200
0.90
0.95
1.00
1.05
1.10
ID = 5mA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
TJ, JUNCTION TEMPERATURE (oC)
Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 15.
Capacitance vs. Drain to Source
Voltage
Figure 16.
0 5 10 15 20 25 30 35
0
2
4
6
8
10
VDD = 40V
VDD =3 2V
ID = 65A
VDD = 48V
Qg, GATE CHARGE( nC)
VGS , GATE TO SOURCE VOLTAGE(V)
Gate Charge vs. Gate to Source
Voltage
Typical Characteristics
FDWS86369_F085 N-Channel PowerTrench® MOSFET
©2016 Fairchild Semiconductor Corporation
FDWS86369_F085 Rev. 1.0
www.fairchildsemi.com6
Detailed Package Outline Drawings
©2016 Fairchild Semiconductor Corporation
FDWS86369_F085 Rev. 1.0
www.fairchildsemi.com
7
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