2N5883 2N5884 2N5885 2N5886 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current CContinuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N5883 2N5885 60 60 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEO VCE=1/2Rated VCEO ICEX VCE=Rated VCEO, VBE=1.5V ICEX VCE=Rated VCEO, VBE=1.5V, TC=150C IEBO VEB=5.0V BVCEO IC=200mA (2N5883, 2N5885) 60 BVCEO IC=200mA (2N5884, 2N5886) 80 VCE(SAT) IC=15A, IB=1.5A VCE(SAT) IC=25A, IB=6.25A VBE(SAT) IC=25A, IB=6.25A VBE(ON) VCE=4.0V, IC=10A hFE VCE=4.0V, IC=3.0A 35 hFE VCE=4.0V, IC=10A 20 hFE VCE=4.0V, IC=25A 4.0 fT VCE=10V, IC=1.0A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=1.0MHz (2N5883, 2N5885) Cob VCB=10V, IE=0, f=1.0MHz (2N5884, 2N5886) hfe VCE=4.0V, IC=3.0A, f=1.0kHz 20 tr VCC=30V, IC=10A, IB1=IB2=1.0A ts VCC=30V, IC=10A, IB1=IB2=1.0A tf VCC=30V, IC=10A, IB1=IB2=1.0A 2N5884 2N5886 80 80 UNITS V V V A A A W C C/W 5.0 25 50 7.5 200 -65 to +200 0.875 MAX 1.0 2.0 1.0 10 1.0 1.0 4.0 2.5 1.5 UNITS mA mA mA mA mA V V V V V V 100 1000 500 MHz pF pF 0.7 1.0 0.8 s s s R1 (4-December 2012) 2N5883 2N5884 2N5885 2N5886 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (4-December 2012) w w w. c e n t r a l s e m i . c o m