Advance Product Information May 11, 2004 High Power Ka-Band SPDT Switch TGS4302-EPU Key Features and Performance * * * * * * * * * 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss < 4ns Switching Speed AP640R2-00 Replacement VPIN Technology Chip Dimensions: 1.09 x 1.09 x 0.10 mm (0.043 x 0.043 x 0.004 inches) Primary Applications * * * Preliminary Data VA = +5V, IA 0mA, VB = -5V, IB = 20mA 10 S21 S11 S13 S22 Gain (dB) -1 0 -2 -10 -3 -20 -4 -30 25 30 35 40 Frequency (GHz) 45 50 Return Loss / Isolation (dB) 0 Ka-Band Transmit / Receive Point-to-Point Radio Point-to-Multipoint Radio Desription The TriQuint TGS4302-EPU is a GaAs single-pole, double-throw (SPDT) PIN monolithic switch designed to operate over the Ka-Band frequency range. This switch maintains a low insertion loss with high power handling of 33dBm or greater input P1dB at VC = 7.5V. These advantages, along with the small size of the chip, make the TGS4302-EPU ideal for use in communication and transmit/receive applications. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information May 11, 2004 TGS4302-EPU TABLE I MAXIMUM RATINGS Symbol Parameter 1/ Value Notes VC Control Voltage -5V to +25V 2/, 3/ IC Control Current 22.5 mA 2/ 3/ Input Continuous Wave Power 38 dBm 3/ PIN TM TSTG 0 Mounting Temperature (30 Seconds) 320 C 4/, 5/ 0 Storage Temperature -65 to 150 C 1/ These ratings represent the maximum operable values for this device. 2/ VC and IC are both per bias pad. 3/ Operation above 30dBm requires control voltages above +5V. 4/ When operated at this bias condition with a base plate temperature of 70 C, the median life is TBD hours. 5/ Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels 0 TABLE II DC PROBE TEST (TA = 25 C, Nominal) NOTES LIMITS SYMBOL UNITS RFWD MIN 3.5 MAX 6 VREV -30 -60 V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information May 11, 2004 TGS4302-EPU TABLE III RF CHARACTERIZATION TABLE (TA = 25 C, Nominal) (VA = +5V, IA = 0mA, VB = -5V, IB = 20mA) Symbol Parameter Test Conditions Typ Units 1.3 0.9 1.3 dB IL Insertion Loss F = 27 - 30 GHz F = 30 - 40 GHz F = 40 - 46 GHz RL Return Loss F = 27 - 46 GHz 10 dB VC = +5V VC = +7.5V VC = +10V VC = +15V 31 33 35 38 dBm P1dB Output Power @ 1dB Gain Compression Notes 1/ 2/ Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. 1/ Frequency = 30GHz 2/ 10V & 15V points are extrapolated from the data Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information May 11, 2004 TGS4302-EPU Preliminary Data IA = 0mA, VB = -5V, IB = 20mA 10 S21 S31 S11 S22 -1 0 -2 -10 -3 -20 -4 -30 25 30 35 40 Frequency (GHz) 45 Return Loss / Isolation (dB) Gain (dB) 0 50 -0.6 -0.8 Gain (dB) -1 -1.2 -1.4 +5V +7.5V +10V +15V +20V -1.6 -1.8 F = 30GHz -2 10 12 14 16 18 20 22 24 26 Pin (dBm) 28 30 32 34 36 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information May 11, 2004 TGS4302-EPU Preliminary Data IA = 0mA, VB = -5V, IB = 10mA, F = 30GHz -0.6 -0.8 Gain (dB) -1 -1.2 -1.4 +5V +7.5V +10V +15V +20V -1.6 -1.8 -2 10 12 14 16 18 20 22 24 26 Pin (dBm) 28 30 32 34 36 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information May 11, 2004 TGS4302-EPU TABLE IV TRUTH TABLE Selected RF Output RF Out A RF Out B VA VB +5V @ ~0mA -5V @ 20mA -5V @ 20mA +5V @ ~0mA Operation at RF power levels >30 dBm requires increasing the positive voltage level to put a larger reverse bias on the diodes while the negative voltage level remains at -5 V with a current of approximately 20mA. Bond pads IA and IB bypass the on-chip series resistors to allow adjustment of the current to the diodes in their forward biased state. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information May 11, 2004 Mechanical Drawing TGS4302-EPU Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information May 11, 2004 Chip Assembly & Bonding Diagram TGS4302-EPU GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information May 11, 2004 TGS4302-EPU Alternate Chip Assembly & Bonding Diagram Refer to Table V for values of R vs. control voltage For single control line operation, an alternate on-chip diode configuration is available for engineering prototype upon request. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information May 11, 2004 TGS4302-EPU TABLE V BIAS RESISTOR VALUES Maximum Negative Bias Voltage -5V -7.5V -10V -15V -20V R 190 Ohms 315 Ohms 440 Ohms 690 Ohms 940 Ohms Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information May 11, 2004 TGS4302-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 11 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com