TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
May 11, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
High Power Ka-Band SPDT Switch TGS4302-EPU
Key Features and Performance
• 27 - 46 GHz Frequency Range
• > 33 dBm Input P1dB @ VC = 7.5V
• On Chip Biasing Resistors
• On Chip DC Blocks
• < 0.9 dB Typical Insertion Loss
• < 4ns Switching Speed
• AP640R2-00 Replacement
• VPIN Technology
• Chip Dimensions:
1.09 x 1.09 x 0.10 mm
(0.043 x 0.043 x 0.004 inches)
Desription
The TriQuint TGS4302-EPU is a GaAs
single-pole, double-throw (SPDT) PIN
monolithic switch designed to operate
over the Ka-Band frequency range. This
switch maintains a low insertion loss with
high power handling of 33dBm or greater
input P1dB at VC = 7.5V. These
advantages, along with the small size of
the chip, make the TGS4302-EPU ideal
for use in communication and
transmit/receive applications.
Primary Applications
• Ka-Band Transmit / Receive
• Point-to-Point Radio
• Point-to-Multipoint Radio
Preliminary Data
VA = +5V, IA ≈ 0mA, VB = -5V, IB = 20mA
-4
-3
-2
-1
0
25 30 35 40 45 50
Frequency (GHz)
Gain (dB)
-30
-20
-10
0
10
Return Loss / Isolation (dB)
S21 S13
S11 S22
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
May 11, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TABLE I
MAXIMUM RATINGS
Symbol Parameter 1/ Value Notes
VCControl Voltage -5V to +25V 2/, 3/
ICControl Current 22.5 mA 2/ 3/
PIN Input Continuous Wave Power 38 dBm 3/
TMMounting Temperature (30 Seconds) 320 0C 4/, 5/
TSTG Storage Temperature -65 to 150 0C
1/ These ratings represent the maximum operable values for this device.
2/ VC and IC are both per bias pad.
3/ Operation above 30dBm requires control voltages above +5V.
4/ When operated at this bias condition with a base plate temperature of 70 0C, the
median life is TBD hours.
5/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels
TGS4302-EPU
TABLE II
DC PROBE TEST
(TA = 25 °C, Nominal)
LIMITS
NOTES SYMBOL
MIN MAX
UNITS
RFWD 3.5 6 Ω
VREV -30 -60 V
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
May 11, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGS4302-EPU
TABLE III
RF CHARACTERIZATION TABLE
(TA = 25°C, Nominal)
(VA = +5V, IA = 0mA, VB = -5V, IB = 20mA)
Symbol Parameter Test Conditions Typ Units Notes
IL Inserti on Loss
F = 27 – 30 GHz
F = 30 – 40 GHz
F = 40 – 46 GHz
1.3
0.9
1.3
dB
RL Return Loss F = 27 – 46 GHz 10 dB
P1dB
Output Power @
1dB Gain
Compression
VC = +5V
VC = +7.5V
VC = +10V
VC = +15V
31
33
35
38
dBm 1/ 2/
Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
1/ Frequency = 30GHz
2/ 10V & 15V points are extrapolated from the data
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
May 11, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGS4302-EPU
Preliminary Data
IA = 0mA, VB = -5V, IB = 20mA
-2
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-0.6
10 12 14 16 18 20 22 24 26 28 30 32 34 36
Pin (dBm)
Gain (dB)
+5V
+7.5V
+10V
+15V
+20V
F = 30GHz
-4
-3
-2
-1
0
25 30 35 40 45 50
Frequency (GHz)
Gain (dB)
-30
-20
-10
0
10
Return Loss / Isolation (dB)
S21 S31
S11 S22
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
May 11, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGS4302-EPU
Preliminary Data
IA = 0mA, VB = -5V, IB = 10mA, F = 30GHz
-2
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-0.6
10 12 14 16 18 20 22 24 26 28 30 32 34 36
Pin (dBm)
Gain (dB)
+5V
+7.5V
+10V
+15V
+20V
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
May 11, 2004
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Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Operation at RF power levels >30 dBm requires increasing the positive
voltage level to put a larger reverse bias on the diodes while the negative
voltage level remains at -5 V with a current of approximately 20mA.
Bond pads IA and IB bypass the on-chip series resistors to allow adjustment
of the current to the diodes in their forward biased state.
TABLE IV
TRUTH TABLE
Selected RF
Output VAVB
RF Out A ≥ +5V @
~0mA
-5V @
20mA
RF Out B -5V @
20mA
≥ +5V @
~0mA
TGS4302-EPU
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
May 11, 2004
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Mechanical Drawing TGS4302-EPU
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
May 11, 2004
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Chip Assembly & Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGS4302-EPU
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
May 11, 2004
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Alternate Chip Assembly & Bonding Diagram
TGS4302-EPU
Refer to Table V for values of R vs. control voltage
For single control line operation, an alternate on-chip diode configuration is
available for engineering prototype upon request.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
May 11, 2004
10
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TABLE V
BIAS RESISTOR VALUES
Maximum
Negative Bias
Voltage
R
-5V 190 Ohms
-7.5V 315 Ohms
-10V 440 Ohms
-15V 690 Ohms
-20V 940 Ohms
TGS4302-EPU
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
May 11, 2004
11
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 200°C.
Assembly Process Notes
TGS4302-EPU
