61312 TKIM/12109QA MSIM TC-00001833 No. A1405-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
July, 2013
ATP404
N-Channel Power MOSFET
60V, 95A, 7.2mΩ, ATPAK
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
0.7
0.4
0.55
9.5
7.3 0.5
1.7
4.6
6.05
13
2
6.5
0.6
4
0.8
0.5
1.5
0.4 2.6
4.6
0.4
0.1
2.3 2.3
ATP404-TL-H
Features
• ON-resistance RDS(on)1=5.5mΩ (typ.) • Input capacitance Ciss=6400pF (typ.)
• 4.5V drive • Halogen free compliance
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID95 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 380 A
Allowable Power Dissipation PDTc=25°C70W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 214 mJ
Avalanche Current *2 IAV 48 A
Note :
*1 VDD=30V, L=100μH, IAV=48A
*2 L≤100μH, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
Ordering number : ENA1405A
Product & Package Information
• Package : ATPAK
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
TL
ATP404
LOT No.
1
3
2,4
ATP404
No. A1405-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 60 V
Zero-Gate Voltage Drain Current IDSS V
DS=60V, VGS=0V 10 μA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transfer Admittance | yfs |VDS=10V, ID=48A 100 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=48A, VGS=10V 5.5 7.2 mΩ
RDS(on)2 ID=48A, VGS=4.5V 7.5 10.5 mΩ
Input Capacitance Ciss VDS=20V, f=1MHz 6400 pF
Output Capacitance Coss 490 pF
Reverse Transfer Capacitance Crss 380 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
53 ns
Rise Time tr 640 ns
Turn-OFF Delay Time td(off) 380 ns
Fall Time tf520 ns
Total Gate Charge Qg VDS=30V, VGS=10V, ID=95A 120 nC
Gate-to-Source Charge Qgs 25 nC
Gate-to-Drain “Miller” Charge Qgd 25 nC
Diode Forward Voltage VSD IS=95A, VGS=0V 0.95
1.2
V
Switching Time Test Circuit Avalanche Resistance Test Circuit
Ordering Information
Device Package Shipping memo
ATP404-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free
50Ω
10V
0V
≥50Ω
VDD
L
ATP404
PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID=48A
RL=0.625Ω
VDD=30V
VOUT
ATP404
VIN
10V
0V
VIN
ATP404
No. A1405-3/7
2
0
14
103456789
6
10
2
8
12
4
| yfs | -- ID
RDS(on) -- VGS RDS(on) -- Tc
ID -- VDS ID -- VGS(off)
IS -- VSD
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Cutoff Voltage, VGS(off) -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Forward T ransfer Admittance, | yfs | -- S
Ciss, Coss, Crss -- VDS
0305 15202510
IT14384
IT14383
IT14382
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.001
0.01
7
5
3
2
IT14381
25
°
C
--25°C
f=1MHz
Coss
Crss
Tc=75°C
0.1 1.0 223 100 223 5757 10
357
5
VGS=0V
Single pulse
1000
100
3
2
3
2
5
7
3
2
5
7
0.1 1.0 23 57723 5 100
VDD=30V
VGS=10V
td(off)
tf
td(on)
tr
IT14379 IT14380
--50 --25 0 25 50 75 100 125 150
0
16
10
6
2
14
12
8
4
ID=48A
Single pulse
Tc=25°CVDS=10V
Tc=75
°
C
IT14377 IT14378
0 5.51.5
0
0
200
160
120
20
40
80
140
100
180
60
2.00.5 1.51.0 0
200
180
140
160
120
100
80
3.0 4.51.0 2.5 4.00.5 2.0 3.5 5.0
60
40
20
4.5V
VGS=3.0V
--25°C
25
°
C
Tc=75°C
Single pulse
6.0V
2
0.1
7
5
3
2
10 23 57
Ciss
8.0V
10.0V
VGS=4.5V, ID=48A
VGS=10.0V, ID=48A
Tc= --25
°
C
75°C
25
°
C
VDS=10V
1.0
7
5
7
5
7
3
2
10
100
3
2
3
21.0
7
5
3
2
10
7
5
3
2
100
7
5
3
2
3
75°C
25°C
Tc= --25°C
1000
10000
7
5
5
3
2
7
3
2
2
25
°
C
--25
°
C
ATP404
No. A1405-4/7
A S O
VGS -- Qg
PD -- Tc
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
EAS -- Ta
Avalanche Energy derating factor -- %
Ambient Temperature, Ta -- °C
0
025 50 75 100 125 150
100
80
60
20
40
120
175
IT10478
IT14385
0
0
1
2
3
4
5
6
7
8
15050 100
10
9VDS=30V
ID=95A
0
IT14387
0
020 40 60
10
20
50
70
60
30
40
80 100 120
80
140 160
2
3
2
3
5
5
7
2
0.01
0.1
3
5
7
2
1.0
2
3
5
7
10
223 57 23 57
0.1 1.0 357
10 100
IT14386
Operation in this area
is limited by RDS(on).
10
μ
s
100μs
ID=95A
IDP=380A
DC operation
1ms
10ms
100ms
3
5
7
7
100
1000 PW≤10μs
Tc=25°C
Single pulse
ATP404
No. A1405-5/7
Taping Specifi cation
ATP404-TL-H
ATP404
No. A1405-6/7
Outline Drawing Land Pattern Example
ATP404-TL-H
Mass (g) Unit
0.266
* For reference
mm Unit: mm
6.5
6.71.6 2
2.3 2.3
1.5
ATP404
PS No. A1405-7/7
Note on usage : Since the ATP404 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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