(INTERSIL FEATURES @ Exceptionally high figure of merit Radiation Immunity @ Symmetrical devices for low-level choppers, data switches, multiplexers and low noise amplifiers Extremely low noise and capacitance High input impedance Zero offset High reliability silicon epitaxial planar construction ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted) Maximum Temperatures Storage Temperature -65C to +200C Operating Junction Temperature +200C Lead Temperature (Soldering, 10 sec time limit) +260C Maximum Power Dissipation Device Dissipation @ Free Air Temperature 300 mW. Linear Derating 1.7mw/c Maximum Voltages & Current Ves Gate to Source Voltage -50 V Veo Gate to Drain Voltage -50 V 'g Gate Current 50 mA 2N4338-2N4341 N-Channel JFET PIN CONFIGURATION TO-18 ac CHIP TOPOGRAPHY 5010 bia) /- ae FULL A = AY oF 0025 0025 | 0036 * (9035 te 904e 0080 yy oe] ORDERING INFORMATION we NOTE: SUBSTRATE 1S GATE. TO-18 WAFER DICE 2N4338 | 2N4398/W | 2N4338/D 2N4339 2N4339/W_ | 2N4339/D 2N4340 | 2N4340/W_ | 2N4340/D 2N4341 2N4341/W | 2N4341/D ELECTRICAL CHARACTERISTICS (25C uniess otherwise specified) 2N4338 2N4339 2N4340 2N4341 PARAMETER main] MAX | MIN | MAX | MIN | MAX] Min] max] UNITS TEST CONDITIONS 0.1 ~0.1 -0.1 -0.1 nA ee . . igss Gate Reverse Current 01 01 01 07 aA VGS = -30 V, Vps=0 bee BVGss Gate-Source Breakdown Voltage -50 -50 -50 -50 v Ig =-1HA, Vos =9 VGS(oft} Gate-Source Cutoff Voltage 0.3 -t -0.6 -1.8 ~1 -3 -2 - Vos =15V,Ip=0.1hA : 0.05 0.05 0.05 0.07 nA Wos=15V Ff ID(off) Drain Cutoff Current (-5) (-5) (-5) (10) (Vv) Ves=(} toss Saturation Drain Current 0.2 0.3 O56 15 1.2 3.6 3 9 mA Vps=18V, Vag =0 Ofs common Source Forward soo | 1800 | B00 | 2400 | 1300 | 3000 | 2000.| 4000 Common-Source Output 5 16 30 60 umho Vos = 15V. VGs=0 f=1kH Sos Conductance ce fds Drain-Source ON Resistance 2500) 1700 1500 800 ohm Vos = 0, VGs=0 Cormmon-Source Input Ciss : 7 7 7 ? Capacitance bean . = Gr Common Source Reverse 3 3 3 3 pF Vos = 18. Ves = 0 f= 1 Mig s Transfer Capacitance . . Nps = 15V,VGs=0 ~4b NF Noise Figure : 1 1 1 1 dB Rigen = 1 meg, BW = 200 Hz f=1kH2z 1-68