NE851M03
NEC's NPN SILICON TRANSISTOR
• NEW MINIATURE M03 PACKAGE:
– Small transistor outline
– Low profile / 0.59 mm package height
– Flat lead style for better RF performance
• IDEAL FOR ≤ 3 GHz OSCILLATORS
• LOW 1/f NOISE
• LOW PUSHING FACTOR
FEATURES OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
PART NUMBER NE851M03
EIAJ1 REGISTERED NUMBER 2SC5800
PACKAGE OUTLINE M03
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
fT Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz GHz 3.0 4.5 –
fT Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz GHz 5.0 6.5
|S21E|2 Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz dB 3.0 4.0 –
|S21E|2 Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz dB 4.5 5.5 –
NF Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz, Zs = Zopt dB – 1.9 2.5
CRE Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz pF – 0.6 0.8
ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 nA – – 600
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA – – 600
hFE DC Current Gain2 at VCE = 1 V, IC = 5 mA 100 120 145
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
3. Collector to base capacitance when the emitter is grounded
DESCRIPTION
NEC's NE851M03 transistor is designed for oscillator appli-
cations up to 3 GHz. The NE851M03 features low voltage
operation, low phase noise, and high immunty to pushing ef-
fects. NEC's low profile/flat lead style "M03" package is ideal
for today's portable wireless applications.
1
3
2
1.2±0.05
0.8±0.1
+0.1
-0.05
+0.1
-0
+0.1
-0
0.15
1.4 ±0.1
(0.9)
0.59±0.05
0.2
0.45
0.45
0.3
80
1. Emitter
2. Base
3. Collector
PIN CONNECTIONS
California Eastern Laboratories
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.0 mm (t) glass epoxy
board.
SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V 9.0
VCEO Collector to Emitter Voltage V 5.5
VEBO Emitter to Base Voltage V 1.5
IC Collector Current mA 100
PT2 Total Power Dissipation mW 200
TJ Junction Temperature °C 150
TSTG Storage Temperature °C -65 to +150
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
Ambient Temperature, TA (°C)
Total Power Dissipation, Ptot (mW)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Collector to Base Voltage, VCB (V)
Reverse Transfer Capacitance, Cre (pF)
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
NE851M03
Base to Emitter Voltage, VBE (V)
Collector Current, IC (mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
PART NUMBER QUANTITY
NE851M03-T1-A 3 k pcs./reel
ORDERING INFORMATION
Collector Current, IC (mA)
Collector to Emitter Voltage, VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
300
250
200
150
100
50
0 25 50 75 100 125 150
Mounted on Glass Epoxy PCB
(1.08 cm2 x 1.0 mm(t) )
f = 1 MHz
1.0
0.8
0.6
0.4
0.2
0123456789
V
CE
= 1 V
100
80
60
40
20
00.2 0.4 0.6 0.8 1.0
60
30
40
50
10
20
0 1 2 3 45 6 7
IB = 40 A
µ
320 A
µ
280 A
µ
240 A
µ
200 A
µ
160 A
µ
120 A
µ
80 A
µ
360 A
µ
400 A
µ
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE851M03
Collector Current, IC (mA)
Gain Bandwidth Product, fT (GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product, fT (GHz)
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Frequency, f (GHz)
Insertion Power Gain, |S21e|2 (dB)
INSERTION POWER GAIN vs.
FREQUENCY
Frequency, f (GHz)
Insertion Power Gain, |S21e|2 (dB)
INSERTION POWER GAIN vs.
FREQUENCY
INSERTION POWER GAIN vs.
FREQUENCY
Frequency, f (GHz)
Insertion Power Gain, |S21e|2 (dB)
INSERTION POWER GAIN vs.
FREQUENCY
Frequency, f (GHz)
Insertion Power Gain, |S21e|2 (dB)
V
CE
= 1 V
f = 2 GHz
10
8
6
4
2
0
101 100
V
CE = 2 V
f = 2 GHz
10
8
6
4
2
0
101 100
VCE = 1 V
IC = 5 mA
35
20
25
30
5
10
15
0
0.1 1 10
VCE = 2 V
IC = 5 mA
35
20
25
30
5
10
15
0
0.1 1 10
V
CE
= 1 V
I
C
= 15 mA
35
20
25
30
5
10
15
0
0.1 1 10
VCE = 2 V
IC = 15 mA
35
20
25
30
5
10
15
0
0.1 1 10
NE851M03
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Collector Current, IC (mA)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
Collector Current, IC (mA)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Collector Current, IC (mA)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
INSERTION POWER GAIN and MAG
vs. COLLECTOR CURRENT
Collector Current, IC (mA)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
INSERTION POWER GAIN and MAG
vs. COLLECTOR CURRENT
Collector Current, IC (mA)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Collector Current, IC (mA)
Insertion Power Gain, |S21e|2 (dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN, MSG vs.
COLLECTOR CURRENT
VCE = 2 V
f = 1 GHz
20
15
5
10
0
1 10 100
MAG
MSG
|S21e|2
VCE = 1 V
f = 2 GHz
15
10
0
5
-5
1 10 100
MAG
|S21e|2
VCE = 2 V
f = 2 GHz
15
10
0
5
-5
1 10 100
MAG
|S21e|2
VCE = 1 V
f = 4 GHz
10
5
-5
0
-10
1 10 100
MAG
MSG
|S21e|2
VCE = 2 V
f = 4 GHz
10
5
-5
0
-10
1 10 100
MSG
|S21e|2
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE851M03
Collector Current, IC (mA)
Noise Figure, NF (dB)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain, Ga (dB)
Noise Figure, NF (dB)
Collector Current, IC (mA)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain, Ga (dB)
Collector Current, IC (mA)
Noise Figure, NF (dB)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain, Ga (dB)
Noise Figure, NF (dB)
Collector Current, IC (mA)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain, Ga (dB)
Input Power, PIN (dBm)
Output Power, POUT (dBm)
OUTPUT POWER AND
COLLECTOR CURRENT vs.
INPUT POWER
Collector Current, IC (mA)
Input Power, PIN (dBm)
Output Power, POUT (dBm)
OUTPUT POWER AND
COLLECTOR CURRENT vs.
INPUT POWER
Collector Current, IC (mA)
4
3
2
1
0
16
12
8
4
0
1 10 100
VCE = 1 V
f = 1 GHz
NF
Ga
4
3
2
1
0
16
12
8
4
0
1 10 100
VCE = 2 V
f = 1 GHz
NF
Ga
4
3
2
1
0
18
12
8
4
0
1 10 100
V
CE
= 1 V
f = 2 GHz
NF
Ga
4
3
2
1
0
18
12
8
4
0
1 10 100
VCE = 2 V
f = 2 GHz
NF
Ga
25
20
15
10
5
0
-5
-10
-15
-15 -10 -5 0 5 10-20
80
70
60
50
40
Pout
IC
30
20
10
0
VCE = 2 V, f = 1 GHz
ICq = 5 mA (RF OFF)
25
20
15
10
5
0
-5
-10
-15
-15 -10 -5 0 5 10-20
80
70
60
50
40
P
out
I
C
30
20
10
0
V
CE
= 2 V, f = 2 GHz
I
Cq
= 5 mA (RF OFF)
NE851M03
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
FREQUENCY S11 S21 S12 S22 K MAG1
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
NE851M03
VC = 1 V, IC = 5 mA
0.100 0.824 -46.13 13.999 152.23 0.033 66.48 0.903 -21.08 0.089 26.32
0.200 0.748 -80.11 11.531 131.89 0.051 52.70 0.745 -34.82 0.187 23.51
0.300 0.705 -104.73 9.279 118.04 0.062 43.78 0.620 -42.24 0.283 21.75
0.400 0.679 -121.76 7.580 108.36 0.067 39.96 0.537 -46.40 0.368 20.54
0.500 0.673 -141.72 6.194 98.80 0.068 35.59 0.410 -53.91 0.510 19.57
0.700 0.666 -155.88 4.587 89.15 0.072 37.14 0.356 -57.66 0.677 18.03
1.000 0.664 -168.35 3.313 78.69 0.078 43.34 0.331 -62.07 0.872 16.26
1.100 0.665 -171.53 3.030 75.69 0.081 45.75 0.327 -64.09 0.924 15.75
1.200 0.664 -174.29 2.794 72.95 0.083 48.31 0.325 -65.91 0.976 15.26
1.300 0.665 -176.88 2.593 70.20 0.086 51.04 0.326 -68.31 1.010 14.15
1.400 0.664 -179.25 2.424 67.64 0.090 53.34 0.329 -70.20 1.039 13.11
1.500 0.665 178.52 2.274 65.18 0.094 55.84 0.332 -72.21 1.056 12.40
1.600 0.666 176.60 2.145 62.84 0.098 58.31 0.335 -74.41 1.065 11.82
1.700 0.666 174.50 2.029 60.56 0.103 60.46 0.340 -76.60 1.071 11.31
1.800 0.666 172.69 1.928 58.37 0.109 62.48 0.345 -78.64 1.066 10.91
1.900 0.666 170.70 1.835 56.25 0.115 64.26 0.351 -80.85 1.064 10.49
2.000 0.666 169.07 1.754 54.18 0.121 66.01 0.356 -83.15 1.056 10.17
2.100 0.667 167.34 1.677 52.01 0.128 67.42 0.362 -85.49 1.039 9.96
2.200 0.667 165.53 1.610 50.17 0.135 68.65 0.370 -87.59 1.021 9.87
2.300 0.667 163.82 1.548 48.31 0.143 69.81 0.377 -89.58 1.004 9.96
2.400 0.668 162.04 1.491 46.50 0.152 70.84 0.383 -91.66 0.983 9.93
2.500 0.669 160.31 1.440 44.69 0.160 71.44 0.391 -93.66 0.959 9.53
2.600 0.669 158.48 1.391 42.95 0.169 72.05 0.397 -95.62 0.944 9.15
2.700 0.670 156.71 1.347 41.25 0.179 72.44 0.405 -97.78 0.920 8.77
2.800 0.669 154.91 1.305 39.67 0.189 72.75 0.412 -99.60 0.903 8.39
2.900 0.669 152.89 1.265 38.08 0.199 72.87 0.420 -101.42 0.888 8.03
3.000 0.671 151.05 1.228 36.56 0.209 72.79 0.427 -103.43 0.868 7.68
3.500 0.670 141.05 1.075 29.73 0.266 71.32 0.463 -112.30 0.808 6.07
4.000 0.672 130.96 0.959 24.15 0.326 67.81 0.493 -121.04 0.775 4.69
4.500 0.671 120.95 0.870 19.76 0.387 62.94 0.518 -130.14 0.778 3.52
5.000 0.673 111.68 0.802 16.38 0.445 57.33 0.538 -139.86 0.798 2.56
5.500 0.675 103.60 0.752 13.83 0.498 51.29 0.553 -150.11 0.830 1.79
6.000 0.680 96.09 0.718 11.88 0.545 45.24 0.563 -160.44 0.865 1.19
Note:
1. Gain Calculations:
MAG = |S21|
|S12|
K - 1 ).
2
(K ± ∆ = S11 S22 - S21 S12
When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21|
|S12|, K = 1 + | ∆ | - |S11| - |S22|
222
2 |S12 S21|,
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
j50
j25
j10
0
10
25
-j10
-j25
-j50
-j100
j100
0
50 100 0
S22
S11
0.100 to 6.000 GHz by 0.100
+90˚
+45˚
+135˚
+180˚ 18642
-135˚
-90˚
-45˚
0˚
S12
S21
0.100 to 6.000 GHz by 0.100
NE851M03
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
FREQUENCY S11 S21 S12 S22 K MAG1
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
NE851M03
VC = 2 V, IC = 10 mA
0.100 0.695 -61.64 23.158 144.21 0.026 61.44 0.821 -29.68 0.183 29.48
0.200 0.624 -100.58 17.024 122.63 0.038 50.73 0.610 -44.71 0.335 26.51
0.300 0.595 -123.61 12.782 110.30 0.044 47.67 0.480 -51.39 0.469 24.63
0.400 0.582 -137.95 10.071 102.30 0.049 47.72 0.405 -54.57 0.583 23.13
0.500 0.609 -154.61 8.021 95.02 0.052 47.72 0.289 -65.42 0.727 21.91
0.700 0.608 -165.54 5.858 87.23 0.060 52.69 0.245 -68.86 0.876 19.91
1.000 0.608 -175.12 4.192 78.55 0.075 59.31 0.226 -72.02 0.984 17.48
1.100 0.610 -177.63 3.830 76.03 0.080 61.10 0.223 -73.72 1.005 16.36
1.200 0.609 -179.89 3.528 73.70 0.086 62.79 0.221 -75.21 1.026 15.15
1.300 0.608 178.01 3.271 71.35 0.091 64.04 0.223 -77.34 1.039 14.33
1.400 0.608 176.04 3.057 69.13 0.097 65.34 0.226 -78.57 1.044 13.69
1.500 0.608 174.19 2.866 66.99 0.104 66.51 0.229 -80.20 1.045 13.12
1.600 0.609 172.64 2.703 64.95 0.110 67.27 0.232 -81.76 1.043 12.63
1.700 0.609 170.81 2.556 62.92 0.117 68.13 0.237 -83.43 1.040 12.18
1.800 0.608 169.29 2.429 60.94 0.124 68.82 0.241 -85.04 1.033 11.81
1.900 0.607 167.57 2.313 59.01 0.131 69.46 0.247 -86.60 1.027 11.45
2.000 0.606 166.16 2.211 57.16 0.138 70.00 0.252 -88.61 1.023 11.11
2.100 0.607 164.68 2.115 55.16 0.146 70.12 0.258 -90.25 1.011 10.96
2.200 0.606 163.12 2.031 53.46 0.154 70.56 0.266 -91.95 0.999 11.21
2.300 0.605 161.63 1.954 51.71 0.162 70.80 0.271 -93.42 0.990 10.82
2.400 0.606 160.05 1.884 50.01 0.170 70.94 0.278 -94.93 0.979 10.45
2.500 0.606 158.52 1.821 48.31 0.178 70.87 0.285 -96.56 0.966 10.10
2.600 0.605 156.89 1.760 46.64 0.186 70.86 0.291 -98.07 0.957 9.75
2.700 0.606 155.28 1.706 44.97 0.196 70.87 0.299 -99.75 0.941 9.41
2.800 0.604 153.71 1.654 43.40 0.205 70.66 0.306 -101.10 0.931 9.08
2.900 0.603 151.89 1.605 41.82 0.214 70.49 0.314 -102.50 0.922 8.76
3.000 0.604 150.23 1.561 40.28 0.223 69.98 0.321 -104.02 0.907 8.45
3.500 0.602 141.17 1.375 33.08 0.272 68.05 0.357 -111.13 0.862 7.04
4.000 0.604 131.89 1.233 26.63 0.323 64.75 0.391 -118.23 0.823 5.81
4.500 0.607 122.66 1.119 20.91 0.376 60.65 0.421 -126.11 0.805 4.73
5.000 0.614 114.03 1.026 15.94 0.428 55.85 0.448 -134.94 0.799 3.80
5.500 0.625 106.41 0.949 11.68 0.477 50.70 0.471 -144.72 0.805 2.99
6.000 0.638 99.10 0.887 8.19 0.523 45.37 0.489 -154.78 0.821 2.30
Note:
1. Gain Calculations:
MAG = |S21|
|S12|
K - 1 ).
2
(K ± ∆ = S11 S22 - S21 S12
When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21|
|S12|, K = 1 + | ∆ | - |S11| - |S22|
222
2 |S12 S21|,
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
j50
j25
j10
0
10
25
-j10
-j25
-j50
-j100
j100
0
50
100 0
S22
S11
0.100 to 6.000 GHz b
y
0.100
+90˚
+45˚
+135˚
+180˚ 18642
-135˚
-90˚
-45˚
0˚
S12
S21
0.100 to 6.000 GHz by 0.100
NE851M03
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
A Business Partner of NEC Com
p
ound Semiconductor Devices, Ltd
.
09/02/2003
Note:
1. Gain Calculations:
MAG = |S21|
|S12|
K - 1 ).
2
(K ± ∆ = S11 S22 - S21 S12
When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21|
|S12|, K = 1 + | ∆ | - |S11| - |S22|
222
2 |S12 S21|,
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
FREQUENCY S11 S21 S12 S22 K MAG1
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
NE851M03
VC = 3 V, IC = 20 mA
0.100 0.555 -83.93 33.100 134.57 0.020 59.16 0.705 -40.19 0.304 32.17
0.200 0.525 -123.08 21.477 114.01 0.028 53.63 0.469 -55.38 0.529 28.79
0.300 0.519 -141.74 15.332 103.82 0.035 55.51 0.355 -61.29 0.680 26.43
0.400 0.518 -152.59 11.824 97.41 0.040 58.95 0.295 -63.99 0.790 24.68
0.500 0.570 -165.20 9.286 91.94 0.045 60.56 0.203 -82.72 0.896 23.15
0.700 0.572 -173.28 6.730 85.52 0.058 64.80 0.170 -87.94 0.977 20.68
1.000 0.573 179.45 4.793 78.07 0.078 68.73 0.156 -90.92 1.020 17.03
1.100 0.574 177.46 4.376 75.85 0.085 69.69 0.154 -92.65 1.024 16.18
1.200 0.573 175.59 4.030 73.81 0.092 70.12 0.153 -93.73 1.032 15.34
1.300 0.573 173.85 3.736 71.72 0.099 70.66 0.156 -95.63 1.033 14.66
1.400 0.572 172.20 3.490 69.72 0.106 71.00 0.159 -96.09 1.031 14.09
1.500 0.572 170.60 3.272 67.80 0.113 71.20 0.162 -97.01 1.030 13.54
1.600 0.571 169.35 3.086 65.92 0.121 71.30 0.164 -97.84 1.027 13.07
1.700 0.571 167.72 2.918 64.09 0.129 71.48 0.169 -98.85 1.022 12.65
1.800 0.570 166.42 2.772 62.29 0.136 71.38 0.173 -99.61 1.018 12.28
1.900 0.568 164.85 2.641 60.52 0.144 71.29 0.177 -100.52 1.015 11.89
2.000 0.567 163.64 2.524 58.79 0.152 71.21 0.182 -101.75 1.010 11.61
2.100 0.566 162.32 2.415 56.94 0.160 71.07 0.188 -102.94 1.004 11.40
2.200 0.566 160.87 2.321 55.35 0.167 70.95 0.194 -103.84 0.997 11.42
2.300 0.564 159.57 2.233 53.71 0.176 70.63 0.200 -104.57 0.990 11.04
2.400 0.564 158.12 2.155 52.12 0.184 70.33 0.205 -105.29 0.982 10.69
2.500 0.563 156.71 2.082 50.51 0.192 69.89 0.212 -106.25 0.974 10.35
2.600 0.562 155.22 2.013 48.91 0.200 69.69 0.218 -107.15 0.968 10.02
2.700 0.562 153.77 1.953 47.33 0.209 69.30 0.225 -108.26 0.958 9.70
2.800 0.559 152.31 1.895 45.82 0.218 68.85 0.231 -108.94 0.952 9.39
2.900 0.558 150.61 1.840 44.30 0.227 68.41 0.238 -109.85 0.946 9.10
3.000 0.558 149.11 1.791 42.79 0.235 67.76 0.245 -110.73 0.937 8.82
3.500 0.554 140.64 1.583 35.66 0.280 65.12 0.280 -115.50 0.903 7.52
4.000 0.555 132.00 1.426 29.06 0.327 61.75 0.313 -120.66 0.870 6.39
4.500 0.558 123.35 1.300 22.97 0.374 57.82 0.345 -127.21 0.850 5.41
5.000 0.567 115.32 1.196 17.43 0.421 53.51 0.374 -134.94 0.834 4.54
5.500 0.581 108.18 1.109 12.40 0.465 48.92 0.400 -143.93 0.826 3.77
6.000 0.599 101.26 1.034 7.97 0.507 44.18 0.423 -153.49 0.828 3.09
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to
result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for
all damages resulting from such improper use or sale.
j50
j25
j10
010 25
-j10
-j25
-j50
-j100
j100
0
50
100 0
S22
S11
0.100 to 6.000 GHz b
y
0.100
+90˚
+45˚
+135˚
+180˚ 18642
-135˚
-90˚
-45˚
0˚
S12
S21
0.100 to 6.000 GHz by 0.100
3-238
A Business Partner of NEC Com
p
ound Semiconductor Devices, Ltd
.
09/02/2003
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to
result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for
all damages resulting from such improper use or sale.
SCHEMATIC
MODEL TEST CONDITIONS
Frequency: 0.1 to 6.0 GHz
Bias: VCE = 1.5 V, IC = 1 mA to 9 mA
Date: 09/2003
Parameters Q1 Parameters Q1
IS 734.5e-18 MJC 0.122
BF 166.6 XCJC 0.1
NF 1.00 CJS 0
VAF 41 VJS 0.75
IKF 0.597 MJS 0
ISE 39.37e-15 FC 0.5
NE 2.258 TF 13e-12
BR 28.67 XTF 0.39
NR 1.000 VTF 0.668
VAR 2.541 ITF 0.06
IKR 23.22e-3 PTF 20
ISC 27.52e-18 TR 0
NC 2.0 EG 1.11
RE 1.7 XTB 0
RB 3.0 XTI 3
RBM 1.0 KF* 0
IRB 759e-6 AF* 1
RC 4.0
CJE 2.51e-12
VJE 0.887
MJE 0.332
CJC 498.2e-15
VJC 0.367
(1) Gummel-Poon Model
BJT NONLINEAR MODEL PARAMETERS(1)
Base
Emitter
Collecto
r
LBPKG
0.6 nH
LB
0.004 nH
LEPKG
0.65 nH
LE
0.004 nH
LCPKG
0.7 nH
CCBPKG
0.15 pF
CCB
0.04 pF
CCE
0.28 pF
CCEPKG
0.08 pF
CBEPKG
0.005 pF
Q1
IC = 5 mA IC = 10 mA IC = 15 mA
AF 1.40 2.551 2.626
KF 4.547e-15 855.6e-12 1.735e-9
AF and KF are 1/f noise parameters and are bias dependent.
The appropriate values for the 1/f noise parameters (AF and KF)
shall be chosen from the table below, according to the desired
current range.
Parameters NE851M03
CCB 0.04 pF
CCE 0.28 pF
LB 0.004 nH
LE 0.004 nH
CCBPKG 0.15 pF
CCEPKG 0.08 pF
CBEPKG 0.005 pF
LBPKG 0.6 nH
LCPKG 0.7 nH
LEPKG 0.65 nH
ADDITIONAL PARAMETERS
For a better understanding on AF and KF parameters,
please refer to AN1026.
NE851M03
NONLINEAR MODEL
3-239
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 1000 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.