VN1304 VN1306 VN1310 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS(ON) ID(ON) Order Number / Package BVDGS (max) (min) TO-39 TO-92 40V 8.0 0.5A -- VN1304N3 60V 8.0 0.5A VN1306N2 VN1306N3 100V 8.0 0.5A VN1310N2 VN1310N3 Advanced DMOS Technology Features These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High input impedance and high gain Complementary N- and P-channel devices Package Options Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage 20V Operating and Storage Temperature Soldering Temperature* D G S S G D TO-39 Case: DRAIN TO-92 -55C to +150C 300C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 7-191 VN1304/VN1306/VN1310 Thermal Characteristics Package ID (continuous)* ID (pulsed) jc Power Dissipation @ TC = 25C ja C/W C/W IDR* IDRM TO-39 0.4A 1.4A 3.0W 41 125 0.4A 1.4A TO-92 0.25A 1.3A 1.0W 125 170 0.25A 1.3A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Parameter BVDSS Min Drain-to-Source Breakdown Voltage VN1310 100 VN1306 60 VN1304 40 VGS(th) Gate Threshold Voltage V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current 0.8 -3.9 ON-State Drain Current ID(ON) Typ 0.25 0.6 0.50 1.4 Max Conditions V VGS = 0V, ID = 1mA 2.4 V VGS = VDS, ID = 1mA -5.0 mV/C VGS = VDS, ID = 1mA 100 nA VGS = 20V, VDS = 0V 1 A VGS = 0V, VDS = Max Rating 100 A VGS = 0V, VDS = 0.8 Max Rating TA = 125C A VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V Static Drain-to-Source ON-State Resistance 5.0 15 5.0 8.0 RDS(ON) Change in RDS(ON) with Temperature 0.8 2 GFS Forward Transconductance CISS Input Capacitance 27 35 COSS Common Source Output Capacitance 13 15 CRSS Reverse Transfer Capacitance 3 5 td(ON) Turn-ON Delay Time 2 5 tr Rise Time 2 5 td(OFF) Turn-OFF Delay Time 2 6 tf Fall Time 2 5 VSD Diode Forward Voltage Drop 1.0 1.3 trr Reverse Recovery Time 350 RDS(ON) Unit 120 VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA %/C m Symbol VGS = 10V, ID = 500mA VDS = 25V, ID = 500mA pF VGS = 0V, VDS = 25V f = 1 MHz ns VDD = 25V ID = 500mA RGEN = 25 V VGS = 0V, ISD = 0.5A ns VGS = 0V, ISD = 0.5A Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. VDD Switching Waveforms and Test Circuit RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) t(OFF) tr td(OFF) OUTPUT Rgen tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 7-192 VN1304/VN1306/VN1310 Typical Performance Curves Output Characteristics Saturation Characteristics 2.0 2.0 1.6 1.6 VGS = 10V 1.2 8V 0.8 6V 0.4 ID (amperes) ID (amperes) VGS = 10V 4V 0 8V 1.2 0.8 6V 0.4 4V 0 0 10 20 30 40 0 50 2 4 6 8 10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 2.5 0.5 VDS = 25V 2.0 TA = -55C 0.3 PD (watts) GFS (siemens) 0.4 TA = 25C 0.2 TA = 125C 0.1 1.5 TO-39 1.0 TO-92 0.5 0 0 0 0.4 0.8 1.2 1.6 0 2.0 25 50 ID (amperes) 125 100 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 10 1.0 Thermal Resistance (normalized) ID (amperes) 75 TA (C) 1.0 TO-92 (pulsed) TO-39 (DC) TO-39 (pulsed) TO-92 (DC) 0.1 TA = 25C 1.0 10 100 VDS (volts) TO-39 PD = 3.5W TC = 25C 0.6 0.4 TO-92 P D = 1W T C = 25C 0.2 0 0.001 .01 0.1 0.8 0.01 0.1 tp (seconds) 7-193 1 10 VN1304/VN1306/VN1310 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 15 1.1 VGS = 5V RDS(ON) (ohms) BVDSS (normalized) 12 1.0 9 VGS = 10V 6 3 0.9 0 -50 0 50 100 150 0 0.3 0.6 0.9 1.2 1.5 ID (amperes) Tj (C) Transfer Characteristics V(th) and RDS Variation with Temperature 2.0 1.5 1.25 VDS = 25V 0.9 1.6 VGS(th) (normalized) ID (amperes) 25C 125C 0.6 V(th) @ 1mA 1.2 RDS(ON) @ 5V, 50mA 1.0 0.8 0.4 0.3 0.75 0 0 0 2 4 6 8 10 -50 0 50 VGS (volts) 100 150 Tj(C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 50 VDS = 10V f = 1MHz VGS (volts) C (picofarads) 8 CISS 25 6 VDS = 40V 60 pF 4 COSS 2 25 pF CRSS 0 0 0 10 20 30 40 0 4 8 12 QG (nanocoulombs) VDS (volts) 7-194 16 20 RDS(ON) (normalized) TA = -55C 1.2 RDS(ON) @ 10V, 500mA