PD - 93831A IRHF57234SE JANSR2N7499T2 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) REF: MIL-PRF-19500/706 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHF57234SE 100K Rads (Si) RDS(on) 0.42 ID QPL Part Number 5.2A JANSR2N7499T2 International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-39 Features: n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight Units 5.2 3.3 20.8 25 0.2 20 142 5.2 2.5 6.8 -55 to 150 A W W/C V mJ A mJ V/ns o C 300 ( 0.063 in./1.6mm from case for 10s) 0.98(Typical) g For footnotes refer to the last page www.irf.com 1 06/16/04 IRHF57234SE, JANSR2N7499T2 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage 250 -- -- V -- 0.31 -- V/C -- -- 0.42 2.5 4.0 -- -- -- -- -- -- 4.5 -- 10 25 V S( ) -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 100 -100 28 7.4 12 25 100 35 40 -- BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 3.3A A nC VDS = VGS, ID = 1.0mA VDS >= 15V, IDS = 3.3A A VDS= 200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 5.2A VDS = 125V ns VDD = 125V, ID = 5.2A VGS =12V, RG = 7.5 BVDSS A nA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 1007 155 8 -- -- -- pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- 5.2 20.8 1.5 287 2.3 Test Conditions A V ns C Tj = 25C, IS = 5.2A, VGS = 0V A Tj = 25C, IF = 5.2A, di/dt 100A/s VDD 25V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max -- -- -- 175 5.0 -- Units C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHF57234SE, JANSR2N7499T2 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads (Si) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-39) Diode Forward Voltage Units Test Conditions Min Max 250 2.0 -- -- -- -- 4.5 100 -100 10 nA A VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 200V, VGS=0V -- 0.402 VGS = 12V, ID = 3.3A -- 0.42 VGS = 12V, ID = 3.3A -- 1.5 V VGS = 0V, ID = 5.2A V International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 250 250 250 250 250 32.5 250 250 250 250 240 28.4 250 250 225 175 50 Energy (MeV) 309 341 350 300 250 VDS 200 Br I Au 150 100 50 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHF57234SE, JANSR2N7499T2 100 Pre-Irradiation 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D , Drain-to-Source Current (A) Drain-to-SourceCurrent Current(A) (A) I D , I Drain-to-Source D' 10 1 0.1 5.0V 0.01 0.01 20s PULSE WIDTH TJ = 25 C 0.001 0.1 1 10 10 0.1 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 C 10 1 TJ = 25 C 0.1 V DS = 15 50V 20s PULSE WIDTH 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 1 10 100 Fig 2. Typical Output Characteristics 100 7.0 20s PULSE WIDTH TJ = 150 C VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 6.0 5.0V 1 0.01 0.1 100 VDS , Drain-to-Source Voltage (V) 0.01 5.0 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP TOP 5.4A ID = 5.2A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation 2000 20 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1600 C, Capacitance (pF) IRHF57234SE, JANSR2N7499T2 Ciss 1200 Coss 800 Crss 400 0 1 10 ID = 5.2A 5.4A VDS = 200V VDS = 125V VDS = 50V 15 10 5 0 100 FOR TEST CIRCUIT SEE FIGURE 13 0 100 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 10 TJ = 150 C 1 TJ = 25 C V GS = 0 V 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 20 30 40 50 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0.1 0.4 10 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 2.4 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100s 1 0.1 1ms Tc = 25C Tj = 150C Single Pulse 1.0 10ms 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHF57234SE, JANSR2N7499T2 Pre-Irradiation 6.0 RD VDS VGS ID , Drain Current (A) 5.0 D.U.T. RG + -V DD 4.0 V GS 3.0 Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit VDS 1.0 90% 0.0 25 50 75 100 125 TC , Case Temperature ( C) 150 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 0.20 1 0.10 0.05 PDM 0.02 0.1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation 15V L VDS D.U.T. RG VGS 20V IAS DRIVER + - VDD 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS A EAS , Single Pulse Avalanche Energy (mJ) IRHF57234SE, JANSR2N7499T2 350 TOP 300 BOTTOM ID 2.3A 3.3A 5.2A 250 200 150 100 50 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12 V QGS .3F D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 12V .2F IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHF57234SE, JANSR2N7499T2 Pre-Irradiation Footnotes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 10.5 mH Peak IL = 5.2A, VGS = 12V A ISD 5.2A, di/dt 307A/s, VDD 250V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- TO-205AF (Modified TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/2004 8 www.irf.com