Absolute Maximum Ratings
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 5.2
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 3.3
IDM Pulsed Drain Current À20.8
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á142 mJ
IAR Avalanche Current À5.2 A
EAR Repetitive Avalanche Energy À2.5 mJ
dv/dt Peak Diode Recovery dv/dt Â6.8 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 ( 0.063 in./1.6mm from case for 10s)
Weight 0.98(Typical) g
Pre-Irradiation
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
oC
A
06/16/04
www.irf.com 1
TO-39
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHF57234SE 100K Rads (Si) 0.42Ω 5.2A JANSR2N7499T2
For footnotes refer to the last page
Features:
nSingle Event Effect (SEE) Hardened
nUltra Low RDS(on)
nIdentical Pre- and Post-Electrical Test Conditions
nRepetitive Avalanche Ratings
n Dynamic dv/dt Ratings
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
RADIATION HARDENED JANSR2N7499T2
POWER MOSFET 250V, N-CHANNEL
THRU-HOLE (TO-39) REF: MIL-PRF-19500/706
55
IRHF57234SE
TECHNOLOGY
PD - 93831A
IRHF57234SE, JANSR2N7499T2 Pre-Irradiation
2www.irf.com
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 5.0
RthJA Junction-to-Ambient — 175 — Typical socket mount
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 250 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.31 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.42 ΩVGS = 12V, ID = 3.3A
Resistance
VGS(th) Gate Threshold Voltage 2.5 — 4.5 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 4.0 — — S ( )V
DS >= 15V, IDS = 3.3A Ã
IDSS Zero Gate Voltage Drain Current — — 10 VDS= 200V ,VGS=0V
——25 V
DS = 200V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 28 VGS =12V, ID = 5.2A
Qgs Gate-to-Source Charge — — 7.4 nC VDS = 125V
Qgd Gate-to-Drain (‘Miller’) Charge — — 12
td(on) Turn-On Delay Time — — 25 VDD = 125V, ID = 5.2A
trRise Time — — 100 VGS =12V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 35
tfFall Time — — 40
LS + LDTotal Inductance — 7.0 — Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss Input Capacitance — 1007 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 155 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 8 —
nA
Ω
Ã
nH
ns
µA
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 5.2
ISM Pulse Source Current (Body Diode) À— — 20.8
VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 5.2A, VGS = 0V Ã
trr Reverse Recovery Time — — 287 ns Tj = 25°C, IF = 5.2A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 2.3 µCV
DD ≤ 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
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IRHF57234SE, JANSR2N7499T2
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
Parameter 100K Rads (Si) Units Test Conditions
Min Max
BVDSS Drain-to-Source Breakdown Voltage 250 — VVGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 2.0 4.5 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse — -100 VGS = -20V
IDSS Zero Gate Voltage Drain Current — 10 µA VDS= 200V, VGS=0V
RDS(on) Static Drain-to-Source
On-State Resistance (TO-3) — 0.402 Ω VGS = 12V, ID = 3.3A
RDS(on) Static Drain-to-Source
VSD Diode Forward Voltage — 1.5 V VGS = 0V, ID = 5.2A
On-State Resistance (TO-39) — 0.42 Ω VGS = 12V, ID = 3.3A
Ion LET Energy Range VDS (V)
MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br 36.7 309 39.5 250 250 250 250 250
I 59.8 341 32.5 250 250 250 250 240
Au 82.3 350 28.4 250 250 225 175 50
0
50
100
150
200
250
300
0 -5 -10 -15 -20
VGS
VDS
Br
I
Au
IRHF57234SE, JANSR2N7499T2 Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
0.001
0.01
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.01
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.01
0.1
1
10
100
5.0 6.0 7.0 8.0 9.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
12V
5.4A
I D’ Drain-to-Source Current (A)
0.01
5.2A
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IRHF57234SE, JANSR2N7499T2
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Pre-Irradiation
1 10 100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Crss
Coss
Ciss
010 20 30 40 50
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
5.4A
V = 50V
DS
V = 125V
DS
V = 200V
DS
0.1
1
10
100
0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1.0 10 100 1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
5.2A
IRHF57234SE, JANSR2N7499T2 Pre-Irradiation
6www.irf.com
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VGS
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
www.irf.com 7
IRHF57234SE, JANSR2N7499T2
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Pre-Irradiation
.
VGS
25 50 75 100 125 150
0
50
100
150
200
250
300
350
E , Single Pulse Avalanche Energy (mJ)
AS
ID
TOP
BOTTOM
2.3A
3.3A
5.2A
Starting TJ, Junction Temperature (°C)
IRHF57234SE, JANSR2N7499T2 Pre-Irradiation
8www.irf.com
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
200 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 10.5 mH
Peak IL = 5.2A, VGS = 12V
 ISD ≤ 5.2A, di/dt ≤ 307A/µs,
VDD ≤ 250V, TJ ≤ 150°C
Footnotes:
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/2004
