
ADA4075-2
Rev. A | Page 3 of 24
SPECIFICATIONS
VSY = ±15 V, VCM = 0 V, TA = 25°C, SOIC package, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS 0.2 1 mV
−40°C ≤ TA ≤ +125°C 1.2 mV
Input Bias Current IB 30 100 nA
−40°C ≤ TA ≤ +125°C 150 nA
Input Offset Current IOS 5 50 nA
−40°C ≤ TA ≤ +125°C 75 nA
Input Voltage Range −40°C ≤ TA ≤ +125°C −12.5 +12.5 V
Common-Mode Rejection Ratio CMRR VCM = −12.5 V to +12.5 V 110 118 dB
−40°C ≤ TA ≤ +125°C 106 dB
Large Signal Voltage Gain AVO R
L = 2 kΩ, VO = −11 V to +11 V 114 117 dB
−40°C ≤ TA ≤ +125°C 108 dB
R
L = 600 Ω, VO = −10 V to +10 V 112 117 dB
−40°C ≤ TA ≤ +125°C 106 dB
Offset Voltage Drift ∆VOS/∆T −40°C ≤ TA ≤ +125°C 0.3 μV/°C
Input Resistance, Differential Mode RINDM 1.5 MΩ
Input Resistance, Common Mode RINCM 500 MΩ
Input Capacitance, Differential Mode CINDM 2.4 pF
Input Capacitance, Common Mode CINCM 2.1 pF
OUTPUT CHARACTERISTICS
Output Voltage High VOH R
L = 2 kΩ to GND 12.8 13 V
−40°C ≤ TA ≤ +125°C 12.5 V
R
L = 600 Ω to GND 12.4 12.8 V
−40°C ≤ TA ≤ +125°C 12 V
V
SY = ±18 V, RL = 600 Ω to GND 15 15.8 V
−40°C ≤ TA ≤ +125°C 14 V
Output Voltage Low VOL R
L = 2 kΩ to GND −14 −13.6 V
−40°C ≤ TA ≤ +125°C −13 V
R
L = 600 Ω to GND −13.6 −13 V
−40°C ≤ TA ≤ +125°C −12.5 V
V
SY = ±18 V, RL = 600 Ω to GND −16.6 −16 V
−40°C ≤ TA ≤ +125°C −15 V
Short-Circuit Current ISC 40 mA
Closed-Loop Output Impedance ZOUT f = 1 kHz, AV = 1 0.1 Ω
POWER SUPPLY
Power Supply Rejection Ratio PSRR VSY = ±4.5 V to ±18 V 106 110 dB
−40°C ≤ TA ≤ +125°C 100 dB
Supply Current per Amplifier ISY V
SY = ±4.5 V to ±18 V, IO = 0 mA 1.8 2.25 mA
−40°C ≤ TA ≤ +125°C 3.35 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ, AV = 1 12 V/μs
Settling Time tS To 0.01%, VIN = 10 V step, RL = 1 kΩ 3 μs
Gain Bandwidth Product GBP RL = 1 MΩ, CL = 35 pF, AV = 1 6.5 MHz
Phase Margin ΦM R
L = 1 MΩ, CL = 35 pF, AV = 1 60 Degrees
HD + NOISE
Total Harmonic Distortion and Noise THD + N RL = 2 kΩ, AV = 1, VIN = 3 V rms, f = 1 kHz 0.0002 %
NOISE PERFORMANCE
Voltage Noise en p-p f = 0.1 Hz to 10 Hz 60 nV p-p
Voltage Noise Density en f = 1 kHz 2.8 nV/√Hz
Current Noise Density in f = 1 kHz 1.2 pA/√Hz