DATA SHEET
The information in this document is subject to change without notice.
Document No. P11285EJ4V0DS00 (4th edition)
Date Published April 1998 NS CP(K)
Printed in Japan
PHOTOCOUPLER
PS2603,PS2604,PS2603L,PS2604L
HIGH ISOLATION VOLTAGE, HIGH CTR
6-PIN PHOTOCOUPLER
©
1988
The mark •
••
• shows major revised poi nts.
−NEPOCTM Series−
DESCRIPTION
The PS2603, PS2604, PS2603L, PS2604L are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon darington-connected phototransistor in a plastic DIP (Dual In-line Package).
The PS2603L, PS2604L are lead bending type (Gull-wing) for surface mount.
FEATURES
• High Isolation voltage (BV = 5 000 Vr.m.s.)
• High-speed switching (tr, tf = 100
µ
s TYP.)
• High current transfer ratio (CTR = 2 000 % TYP.)
• UL approved: File No. E72422 (S)
• Ordering number of taping product: PS2603L-E3, E4, PS2604L-E3, E4
APPLICATIONS
• Power supply
• Telephone
• AC/DC line interface
• Electric home appliances
2
PS2603,PS2604,PS2603L,PS2604L
PACKAGE DIMENSIONS (in millimeters)
PS2603, PS2604
DIP type
PS2603L, PS2604L
Lead bending type
6.5
0 to 15˚
7.62
2.54
3.8 MAX.
0.65
4.55 MAX.
2.54 MAX.
2.8 MIN.
0.50±0.10
0.25
M
1.34
3.8 MAX.
2.54 MAX.
2.54
1.34±0.10
0.25 M
6.5
0.9±0.25
9.60±0.4
0.05 to 0.2
7.62
10.16 MAX. 10.16 MAX.
PIN CONNECTIONS (TOP VIEW)
PS2603, PS2603L
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. Base
132
654
PS2604, PS2604L
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. NC
132
654
3
PS2603,PS2604,PS2603L,PS2604L
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
°°
°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current (DC) IF80 mA
Reverse Vol tage VR6.0 V
Power Dissipati on Derating
∆
PD/°C1.5mW/
°
C
Power Dissipati on PD150 mW
Peak Forward Current *1 IFP 1A
Transistor Collector to Emitter Voltage VCEO 40 V
Emitter to Collector Voltage VECO 6V
Collector Current IC200 mA
Power Dissipati on Derating
∆
PC/°C2.0mW/
°
C
Power Dissipati on PC200 mW
Isolat i on Voltage *2 BV 5 000 Vr.m. s.
Operating Am bi ent Tem perature TA−55 to +100 °C
Storage Temperat ure Tstg −55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
4
PS2603,PS2604,PS2603L,PS2604L
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VFIF = 10 mA 1.1 1.4 V
Reverse Current IRVR = 5 V 5.0
µ
A
Terminal Capaci tance CtV = 0 V, f = 1.0 MHz 30 pF
Transistor Collector to Emitter
Dark Current ICEO VCE = 40 V, I F = 0 m A 400 nA
DC Current Gain *1 hFE IC = 2 mA, VCE = 5 V 180
Coupled Current Transf er Ratio
(IC/IF) *2 CTR IF = 1 mA, VCE = 2 V 200 2 000 %
Collector Saturation
Voltage VCE (sat) IF = 1 mA, IC = 2 mA 1.0 V
Isolat i on Resistance RI-O VI-O = 1.0 kVDC 1011 Ω
Isolat i on Capacitance CI-O V = 0 V, f = 1. 0 M Hz 0.6 pF
Rise Time *3 trVCC = 5 V, I C = 10 mA , RL = 100 Ω100
µ
s
Fall Time *3 tf100
*1 Second stage transistor (PS2603, PS2603L only)
*2 CTR rank
K : 2 000 to (%)
L : 700 to 3 400 (%)
M: 200 to 1 000 (%)
*3 Test circuit for switching time
Pulse input V
CC
V
OUT
R
L
= 100 Ω50 Ω
I
F
(PW = 1 ms,
Duty cycle = 1/10)
5
PS2603,PS2604,PS2603L,PS2604L
TYPICAL CHARACTERISTICS (TA = 25 °
°°
°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature T
A
(˚C)
Diode Power Dissipation P
D
(mW)
200
100
50
0
150
25 50 75 100
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(˚C)
Transistor Power Dissipation P
C
(mW)
200
100
50
0
150
25 50 75 100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
140
120
100
80
60
40
20
0246810
I
F
= 0.5 mA
5 mA
2 mA
1 mA
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(˚C)
Collector to Emitter Dark Current I
CEO
(nA)
–60 –40 0 20 40 60 100–20 80
500
50
1
50 000
5 000
10 000
1 000
100
10
5
V
CE
= 40 V
24 V
10 V
5 V
2 V
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(mA)
1 000
100
0.1
10
1
0.4 0.6 0.8 1.0 1.2 1.61.4
I
F
= 10 mA5 mA
1 mA
0.5 mA
0.2 mA
0.1 mA
FORWARD CURRENT vs.
FORWARD VOLTAGE
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
100
10
1
0.1
0.01
0.6 0.8 1.0 1.2 1.4 1.6
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
6
PS2603,PS2604,PS2603L,PS2604L
FREQUENCY RESPONSE
Frequency f (kHz)
Normalized Gain Gv
5
0
–5
–10
–15
–20
–25
0.2 0.5 2 5 50 2001 10 20 100
I
F
= 1 mA,
V
CE
= 2 V
R
L
= 100 Ω
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(˚C)
Normalized Current Transfer Ratio CTR
1.2
0.8
0.4
0.0
1.0
0.6
0.2
–50 –25 25 50 75 1000
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 1 mA, V
CE
= 2 V
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
2 000
1 000
500
200
50
100
2050 200 500 1 k 2 k100
SWITCHING TIME vs.
LOAD RESISTANCE
Load Resistance R
L
(Ω)
Switching Time t ( s)
µ
V
CC
= 10 V,
I
C
= 2 mA
t
off
t
on
t
f
t
r
V
CE
= 2 V
Forward Current I
F
(mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
5 000
4 000
2 000
0
1 000
3 000
0.10.05 0.5 5 50110
Sample A
B
C
D
1.2
1.0
0.0
0.4
0.2
0.8
0.6
10
2
10
3
10 10
4
10
5
10
6
Time (Hr)
LONG TERM CTR DEGRADATION
CTR (Relative Value)
CTR Test condition
I
F
= 1 mA, V
CE
= 2 V
I
F
= 1 mA,
T
A
= 25 ˚C
I
F
= 1 mA,
T
A
= 60 ˚C
Remark The graphs indicate nominal characteristics.
7
PS2603,PS2604,PS2603L,PS2604L
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
60 to 90 s
(preheating)
210 ˚C
120 to 160 ˚C
Package Surface Temperature T (˚C)
Time (s)
(heating)
to 10 s
to 30 s
235 ˚C (peak temperature)
Recommended Temperature Profile of Infrared Reflow
Peak temperature 235 ˚C or below
Caution Please avoid removing the residual flux by water after the first reflow process.
(2) Dip soldering
• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
PS2603,PS2604,PS2603L,PS2604L
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
