FMS2027 FMS2027 DC-20GHz MMIC LOW LOSS SPDT ABSORPTIVE SWITCH Package Style: Bare Die NOT FOR NEW DESIGNS Product Description Features The FMS2027 is a low loss, high isolation broadband single-pole double-throw Gallium Arsenide switch, designed on the FL05 0.5m switch process from RFMD. It offers absorptive properties from the output (50 termination). This process technology offers leading-edge performance optimized for switch applications. The FMS2027 is developed for the broadband communications, instrumentation, and electronic warfare markets. Optimum Technology Matching(R) Applied Applications RFIN GaAs HBT Broadband Communications Test Instrumentation Fiber Optics Electronic Warfare (ECM, ESM) S GaAs MESFET InGaP HBT DE SI GN SiGe BiCMOS Si BiCMOS Low Insertion Loss: 2.1dB at 20GHz High Isolation: 42dB at 20GHz Absorptive Output in Off State Excellent Low Control Voltage Performance SiGe HBT GaAs pHEMT Si CMOS Si BJT RFO1 GaN HEMT RFO2 InP HBT RF MEMS Parameter Electrical Specifications (Small-Signal Unless Noted) Min. -1 -1.5 -1.8 -2.3 FO R Insertion Loss NE W LDMOS NO T Isolation Input Return Loss (ON State) Output Return Loss (OFF State) Output Return Loss (OFF State) P1dB 23 21 19 Specification Typ. -0.85 -1.3 -1.6 -2.1 -42 -12 -16 -22 23 22.5 21 Max. Unit Condition Based on on-wafer measurements. TAMBIENT =25C, VCTRL =0V/-5V, ZIN =ZOUT =50 -40 -10 -13 -12 dB dB dB dB dB dB dB dB dBm dBm dBm DC 10GHz 15GHz 20GHz DC-20GHz DC-20GHz DC-20GHz DC-20GHz 2GHz 10GHz 18GHz RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2012, RF Micro Devices, Inc. DS120621 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 1 of 5 FMS2027 Absolute Maximum Ratings Parameter Rating Unit +27 dBm Operating Temperature (TOPER) -40 to 85 C Storage Temperature (TSTOR) -55 to 150 C Maximum Input Power (PIN) Control Voltage (VCTRL) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. V RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Truth Table -5V 0V 0V -5V RF Path RFIN-RFO1 RFIN-RFO2 On Off Notes: -5V0.2 V; -0V0.2 V Off On S B DE SI GN Control Line A Pad Layout B A B A FO R RFO1 B RFIN NE W A A Pad RFIN RFO1 RFO2 A A A A B B B RFO2 Description RFIN RFOUT1 RFOUT2 VA1 VA2 VA3 VA4 VB1 VB2 VB3 Note: Only one control line A and one control line B require connection. Die Thickness (m) Min. Bond Pad Pitch (m) Min. Bond Pad Opening (mxm) 1336x934 100 146 94x94 NO T Die Size (m) 2 of 5 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120621 FMS2027 Typical Measured Performance On Wafer Measurement Conditions: VCTRL =5V (low) and 0V (high), TAMBIENT =25C. Both arms RFO1 and RFO2 are symmetrical. Isolation (S21 OFF) 0.00 0.00 -0.50 -20.00 S21 (dB) S21 (dB) Inser tion Loss (S21 ON) -1.00 -1.50 -2.00 -40.00 -60.00 -80.00 -100.00 -120.00 -2.50 0 2 4 6 8 10 12 14 16 18 0 20 2 4 6 8 12 14 16 18 20 14 16 18 20 Fr equency (GHz) S Fr equency (GHz) DE SI GN Input Retur n Loss (S11 ON) Output Return Loss (S22 ON) 0.00 0.00 -5.00 -5.00 -10.00 S22 (dB) S11 (dB) 10 -15.00 -20.00 -10.00 -15.00 -20.00 -25.00 -30.00 2 4 6 8 -25.00 NE W 0 10 12 14 16 18 20 0 2 4 6 8 Frequency (GHz ) Absorptive Output Return Loss (S22 OFF) 0.00 10 12 Frequency (GHz) P1dB -30.00 -40.00 24.00 P1dB (dBm) S22 (dB) -20.00 FO R 28.00 -10.00 NO T DS120621 12.00 4.00 -60.00 2 16.00 8.00 -50.00 0 20.00 0.00 4 6 8 10 12 Fr equency (GHz) 14 16 18 20 2 4 6 8 10 12 14 16 18 20 Fr equency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 3 of 5 FMS2027 Typical Measured Performance On-Wafer Over Temperature Measurement Conditions: VCTRL =-5V (low) and 0V (high). Both arms RFO1 and RFO2 are symmetrical. TAMBIENT =25C, TCOLD =-40C, THOT =+85C Isolation (S21 OFF) 0.00 0.00 -0.50 -10.00 -20.00 -1.00 -1.50 -30.00 -40.00 -50.00 -60.00 -2.00 -70.00 -2.50 -80.00 -90.00 0 2 4 6 8 10 12 14 16 18 0 20 4 6 8 10 12 14 16 18 20 14 16 18 20 Frequency (GHz) DE SI GN Frequency (GHz) Output Retur n Loss (S22 ON) Input Return Loss (S11 ON) 0.00 0.00 -5.00 -5.00 -10.00 S22 (dB) S11 (dB) 2 S S21 (dB) S21 (dB) Insertion Loss (S21 ON) -15.00 -20.00 -10.00 -15.00 -20.00 NE W -25.00 -30.00 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) -25.00 0 2 4 6 8 10 12 Frequency (GHz) 0.00 -10.00 S22(dB) -20.00 -30.00 FO R Absorptive Output Retur n Loss (S22 OFF) NO T -40.00 -50.00 -60.00 0 4 of 5 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120621 FMS2027 Preferred Assembly Instructions GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy onto the top face of the die. Ideally it should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for one hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au 20% Sn) eutectic die attach has a melting point of approximately 280C but the absolute temperature being used depends on the leadframe material used and the particular application. The maximum time at used should be kept to a minimum. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4mm diameter gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. Bond force, time stage temperature and ultrasonics are all critical parameters and the settings are dependent on the setup and application being used. Ultrasonic or thermosonic bonding is not recommended. DE SI GN Handling Precautions S Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimized especially when making RF or ground connections. To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. ESD/MSL Rating NE W These devices should be treated as Class 1A (250V to 500V) using the human body model as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpackaged part and therefore no MSL rating applies. Application Notes and Design Data Application Notes and design data including S-parameters are available on request from www.rfmd.com. Reliability FO R An MTTF of in excess of 9 million hours at a channel temperature of 150C is achieved for the process used to manufacture this device. Disclaimers This product is not designed for use in any space-based or life-sustaining/supporting equipment. NO T Ordering Information DS120621 Delivery Quantity Ordering Code Full Pack (100) FMS2027-000 Small Quantity (25) FMS2027-000SQ Sample Quantity (3) FMS2027-000S3 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 5 of 5