Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54537P/FP
7-UNIT 350m A TRANSISTOR ARRAY
DESCRIPTION
M54537P and M54537FP are seven-circuit transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
ÁMedium breakdown voltage (BV CEO ≥ 20V)
ÁHigh-current driving (Ic(max) = 350mA)
ÁDriving available with PMOS IC output
ÁLow collector-emitter saturation voltage
(VCE(sat) is 0.5V when IC is 250mA)
ÁW ide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54537P and M54537FP each have seven circuits con-
sisting of NPN transistors. Resistance of 2kΩ is connected
to the inputs. The output transistor emitters are connected to
the GND pin (pin 8). VCC is connected to pin 9.
The collector current is 350 mA maximum. Collector-emitter
supply voltage is 20V maximum.
The collector-emitter saturation voltage is as low as 0.5 V or
even lower, when IC is 250mA.
The M54537FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
10
–0.5 ~ +20
350
–0.5 ~ +10
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
VCC
VCEO
IC
VI
Pd
Topr
Tstg
V
V
mA
V
W
°C
°C
20K
380
2K
2K
GND
V
CC
INPUT OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
The seven circuits share the V
CC
and GND.
Ratings UnitSymbol Parameter Conditions
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
1IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
V
CC
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1
16P4(P)
Package type 16P2N-A(FP)
INPUT OUTPUT
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54537P/FP
7-UNIT 350mA TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
V
mA
VCE (sat)
II
V
V
V
V
—
—
—
—
8
20
6
0.3
0
0
—
—mA
3
0
3
0
250
150
—
0.5
0.35
1.5
5.6
27
—
V
mA
—
VCC = 8V, ICEO = 100µA
VI = 3V, VCC = 6.5V, IC = 250mA
VI = 3V, VCC = 3V, IC = 150mA
VCC = 8V, V I = 3.2V
VCC = 8V, V I = 8V
VCC = 8V, V I = 3.2V
VCE = 4V, VCC = 6.5V, IC = 250mA, Ta = 25°C
V
(BR) CEO
ICC
hFE
Symbol UnitParameter Test conditions Limits
min typ+max
20
—
—
—
—
—
1000
—
0.28
0.17
0.7
2.9
17
7000
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
ns
ns
ton
toff
—
—15
840 —
—
Symbol UnitParameter Test conditions Limits
min typ max
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Symbol Parameter min typ max Unit
Limits
VCC
VO
VIH
VIL
IC
Supply voltage
Output voltage
“H” input voltage
“L” input voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
VCC = 6.5V, Duty Cycle
P : no more than 60%
FP : no more than 40%
VCC = 6.5V, Duty Cycle
P : no more than 40%
FP : no more than 25%
Collector-emitter breakdown voltage
Supply current (one circuit coming on)
DC amplification factor
Collector-emitter saturation voltage
Input current
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Turn-on time
Turn-off time CL = 15pF (note 1)
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
PG
50ΩC
L
R
L
Measured
device
V
CC
V
O
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
O
= 50Ω
V
P
= 3V
P-P
(2) Input-output conditions : R
L
= 40Ω, V
O
= 10V, V
CC
= 6.5V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54537P/FP
7-UNIT 350mA TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Duty cycle (%)
0
0
100
200
300
400
20 40 60 80 100
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54537FP)
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
M54537FP
M54537P
Power dissipation Pd (W)
0
0
0.5
1.0
1.5
2.0
25 50 75 100
V
CC
= 3V
V
I
= 3V
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE
(sat) (V)
Ta = –20°C
Ta = 25°C
Ta = 75°C
Collector current Ic (mA)
0
0
100
200
300
400
0.1 0.2 0.3 0.4 0.5
Duty-Cycle-Collector Characteristics
(M54537P)
Duty cycle (%)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•V
CC
= 6.5V
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•V
CC
= 6.5V
•Ta = 25°C
0
0
100
200
300
400
➀ to ➃
➄
➅
➆
➀
➃
➁
➂
➄
➅
➆
➄
➅
➆
20 40 60 80 100
Collector current Ic (mA)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•V
CC
= 6.5V
•Ta = 75°C
•The collector current
values represent the
current per circuit.
•Repeated
frequency ≥ 10Hz
•The value in the circle
represents the value of the
simultaneously-operated circuit.
•V
CC
= 6.5V
•Ta = 75°C
Duty cycle (%)
0
0
100
200
300
400
➀➁
➂
➃
➄➅➆
➀
➁
➂
➃
20 40 60 80 100
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54537P)
Duty cycle (%)
0
0
100
200
300
400
20 40 60 80 100
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54537FP)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54537P/FP
7-UNIT 350mA TRANSISTOR ARRAY
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
101103
V
CC
= 6.5V
V
CE
= 4V
V
CC
= 8V
Ta = 25°C
Ta = 75°C
Ta = –20°C
5
3
2
7
104
5
3
2
7
103
102
23 57
102
23 57
DC amplification factor hFE
Grounded Emitter Transfer Characteristics
Input voltage VI (V)
0
V
CC
= 6.5V
V
CE
= 4V
Ta = 75°C
Ta = –20°C
Ta = 25°C
100
200
300
400
00.5 1.0 1.5 2.0
Collector current Ic (mA)
Input Characteristics
Input voltage VI (V)
0
Ta = 25°C
Ta = 75°C
Ta = –20°C
2
1
3
4
5
0246810
Input current II (mA)
V
I
= 3.2V
Supply Current Characteristics
Supply voltage VCC (V)
0
Ta = 25°C
Ta = 75°C
Ta = –20°C
20
10
30
40
50
0246810
Supply current Icc (mA)
