MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54537P/FP 7-UNIT 350mA TRANSISTOR ARRAY DESCRIPTION M54537P and M54537FP are seven-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES A Medium breakdown voltage (BV CEO 20V) A High-current driving (Ic(max) = 350mA) A Driving available with PMOS IC output A Low collector-emitter saturation voltage (V CE(sat) is 0.5V when IC is 250mA) A Wide operating temperature range (Ta = -20 to +75C) IN1 1 16 O1 IN2 2 15 O2 IN3 3 14 O3 IN4 4 13 O4 OUTPUT IN5 5 12 O5 IN6 6 11 O6 IN7 7 10 O7 GND 8 9 VCC 16P4(P) Package type 16P2N-A(FP) CIRCUIT DIAGRAM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces 380 VCC 2K INPUT OUTPUT 20K 2K FUNCTION The M54537P and M54537FP each have seven circuits consisting of NPN transistors. Resistance of 2k is connected to the inputs. The output transistor emitters are connected to the GND pin (pin 8). VCC is connected to pin 9. The collector current is 350 mA maximum. Collector-emitter supply voltage is 20V maximum. The collector-emitter saturation voltage is as low as 0.5 V or even lower, when IC is 250mA. The M54537FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI Pd Parameter GND The seven circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : (Unless otherwise noted, Ta = -20 ~ +75 C) Conditions Supply voltage Collector-emitter voltage Collector current Input voltage Topr Power dissipation Operating temperature Tstg Storage temperature Output, H Current per circuit output, L Ta = 25C, when mounted on board Ratings 10 Unit V -0.5 ~ +20 V mA 350 -0.5 ~ +10 V W 1.47(P)/1.00(FP) -20 ~ +75 C -55 ~ +125 C Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54537P/FP 7-UNIT 350mA TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -20 ~ +75C) min Limits typ 3 -- 8 V 0 -- 20 V 0 -- 250 0 -- 150 "H" input voltage 3 -- 6 "L" input voltage 0 -- 0.3 Symbol Parameter VCC Supply voltage Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) VO IC VIH VIL VCC = 6.5V, Duty Cycle P : no more than 40% FP : no more than 25% VCC = 6.5V, Duty Cycle P : no more than 60% FP : no more than 40% ELECTRICAL CHARACTERISTICS max Unit mA V V (Unless otherwise noted, Ta = -20 ~ +75C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE (sat) VI = 3V, VCC = 6.5V, IC = 250mA Collector-emitter saturation voltage VI = 3V, VCC = 3V, IC = 150mA II Input current ICC Supply current (one circuit coming on) h FE DC amplification factor Limits Test conditions VCC = 8V, ICEO = 100A VCC = 8V, VI = 3.2V VCC = 8V, VI = 8V VCC = 8V, VI = 3.2V VCE = 4V, VCC = 6.5V, I C = 250mA, Ta = 25C Unit min 20 typ+ -- max -- -- -- 0.28 0.17 0.5 0.35 V -- -- 0.7 2.9 1.5 5.6 mA 27 mA -- 1000 17 V -- 7000 -- + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time CL = 15pF (note 1) Turn-off time min typ max -- -- 15 840 -- -- Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Limits Test conditions VCC VO Measured device 50% 50% INPUT RL OUTPUT PG OUTPUT 50 CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 3VP-P (2) Input-output conditions : RL = 40, VO = 10V, VCC = 6.5V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54537P/FP 7-UNIT 350mA TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 400 VCC = 3V VI = 3V Collector current Ic (mA) Power dissipation Pd (W) 2.0 M54537P 1.5 M54537FP 1.0 0.5 0 0 25 50 75 Ta = -20C 300 Ta = 75C 200 100 0 100 Ta = 25C 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (C) Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54537P) Duty-Cycle-Collector Characteristics (M54537P) 400 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 6.5V *Ta = 25C 100 0 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) to *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 6.5V *Ta = 75C 100 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty-Cycle-Collector Characteristics (M54537FP) Duty-Cycle-Collector Characteristics (M54537FP) 100 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 6.5V *Ta = 25C 100 0 20 40 60 Duty cycle (%) 80 100 Collector current Ic (mA) Collector current Ic (mA) 200 0 100 400 0 300 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 6.5V *Ta = 75C 100 0 0 20 40 60 80 100 Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54537P/FP 7-UNIT 350mA TRANSISTOR ARRAY DC Amplification Factor Collector Current Characteristics 104 VCC = 6.5V VCE = 4V VCC = 6.5V VCE = 4V Ta = 75C 5 Ta = 25C 3 Collector current Ic (mA) 7 DC amplification factor hFE Grounded Emitter Transfer Characteristics 400 Ta = -20C 2 103 7 5 3 Ta = 75C 300 Ta = 25C Ta = -20C 200 100 2 102 1 10 2 3 5 7 102 2 0 5 7 103 3 0 1.5 Input voltage VI (V) Input Characteristics Supply Current Characteristics 2.0 50 VCC = 8V VI = 3.2V Supply current Icc (mA) 4 Input current II (mA) 1.0 Collector current Ic (mA) 5 Ta = -20C 3 2 Ta = 25C Ta = 75C 1 0 0.5 0 2 4 6 Input voltage VI (V) 8 10 40 30 Ta = -20C 20 Ta = 25C Ta = 75C 10 0 0 2 4 6 8 10 Supply voltage VCC (V) Aug. 1999