Document Number: 91083 www.vishay.com
S11-1051-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF9620S, SiHF9620S
Vishay Siliconix
FEATURES
•Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• P-Channel
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not Applicable
c. ISD - 3.5 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
VDS (V) - 200
RDS(on) ()V
GS = - 10 V 1.5
Qg (Max.) (nC) 22
Qgs (nC) 12
Qgd (nC) 10
Configuration Single
S
G
D
P-Channel MOSFET
D
2
PAK (TO-263)
GD
S
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9620S-GE3 SiHF9620STRL-GE3a
Lead (Pb)-free IRF9620SPbF IRF9620STRLPbFa
SiHF9620S-E3 SiHF9620STL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS - 200 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at - 10 V TC = 25 °C ID
- 3.5
ATC = 100 °C - 2.0
Pulsed Drain CurrentaIDM - 14
Linear Derating Factor 0.32 W/°C
Linear Derating Factor (PCB Mount)e0.025
Inductive Current, Clamp ILM - 14 A
Maximum Power Dissipation TC = 25 °C PD
40 W
Maximum Power Dissipation (PCB Mount)eTA = 25 °C 3.0
Peak Diode Recovery dV/dtcdV/dt - 5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91083
2S11-1051-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620S, SiHF9620S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA --62
°C/W
Maximum Junction-to-Ambient
(PCB Mount)aRthJA --40
Maximum Junction-to-Case (Drain) RthJC --3.1
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = - 250 μA - 200 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.22 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 200 V, VGS = 0 V - - - 100 μA
VDS = - 160 V, VGS = 0 V, TJ = 125 °C - - - 500
Drain-Source On-State Resistance RDS(on) V
GS = - 10 V ID = - 1.5 Ab--1.5
Forward Transconductance gfs VDS = - 50 V, ID = - 1.5 A 1.0 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 10
- 350 -
pFOutput Capacitance Coss - 100 -
Reverse Transfer Capacitance Crss -30-
Total Gate Charge Qg
VGS = - 10 V ID = - 4.0 A, VDS = - 160 V,
see fig. 11 and 18b
--22
nC Gate-Source Charge Qgs --12
Gate-Drain Charge Qgd --10
Turn-On Delay Time td(on)
VDD = - 100 V, ID = - 1.5 A,
RG = 50 , RD = 67 , see fig. 17b
-15-
ns
Rise Time tr -25-
Turn-Off Delay Time td(off) -20-
Fall Time tf -15-
Internal Drain Inductance LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance LS-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--- 3.5
A
Pulsed Diode Forward CurrentaISM --- 14
Body Diode Voltage VSD TJ = 25 °C, IS = - 3.5 A, VGS = 0 Vb--- 7.0V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 3.5 A, dI/dt = 100 A/μsb- 300 450 ns
Body Diode Reverse Recovery Charge Qrr -1.92.9nC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
Document Number: 91083 www.vishay.com
S11-1051-Rev. C, 30-May-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620S, SiHF9620S
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 4 - Maximum Safe Operating Area
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
91083_01
80 µs Pulse Test
VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
- 10
- 5
V
GS
= - 10, - 9, - 8, - 7 V
- 4 V
- 6 V
- 5 V
- 4
0
- 1
- 2
- 3
0- 50- 40
- 30- 20
91083_02 VGS, Gate-to-Source Voltage (V)
ID, Drain Current (A)
- 2
- 5
- 4
0
- 1
- 2
- 3
0- 10- 8
- 6- 4
80 µs Pulse Test
VDS > ID(on) x RDS(on) max.
T
J
= - 55
°
C
T
J
= 25
°
C
T
J
= 125
°
C
91083_03 VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
- 1
- 5
- 4
0
- 1
- 2
- 3
0- 5- 4
- 3- 2
80 µs Pulse Test
V
GS
= - 10, - 9, - 8, - 7 V
- 4 V
- 6 V
- 5 V
100 µs
1 ms
10 ms
Operation in this area limited
by RDS(on)
Negative VDS, Drain-to-Source Voltage (V)
Negative ID, Drain Current (A)
TC = 25 °C
TJ = 150 °C
Single Pulse
102
2
5
0.1
1
2
5
10
2
5
25
110
25
102103
25
91083_04
2.0
1.0
0.1
10-5 10-4 10-3 10-2 0.1 1.0 10
PDM
t1
t2
t1, Square Wave Pulse Duration (s)
ZthJC(t)/RthJC, Normalized Effective Transient
Notes:
1. Duty Factor, D = t1/t2
2. Per Unit Base = RthJC = 3.12 °C/W
3. TJM - TC = PDM ZthJC(t)
Single Pulse (Transient
Thermal Impedence)
0.2
0.05
0.02
0.01
91083_05
0.1
D = 0.5
0.5
0.2
0.05
0.02
0.01 25 25 25 25 25 25
Thermal Impedence (Per Unit)
www.vishay.com Document Number: 91083
4S11-1051-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620S, SiHF9620S
Vishay Siliconix
Fig. 6 - Typical Transconductance vs. Drain Current
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Breakdown Voltage vs. Temperature
Fig. 9 - Normalized On-Resistance vs. Temperature
Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
4.0
g
fs
,Transconductance (S)
I
D,
Drain Current (A)
- 1 - 2 - 3 - 4 - 5
0
TJ = 25
°
C
TJ = - 55
°
C
91083_06
TJ = 125
°
C
80 µs Pulse Test
VDS > ID(on) x RDS(on) max.
3.2
2.4
1.6
0.8
0.0
TJ = 25 °C
TJ = 150 °C
- 20
V
SD
, Source-to-Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
- 2.0 - 6.8
- 5.6- 4.4- 3.2
91083_07
- 0.1
- 0.2
- 1.0
- 2
- 5
- 10
- 8.0
- 0.5
91083_08 TJ, Junction Temperature (°C)
BVDSS, Drain-to-Source Breakdown
1.25
Voltage (Normalized)
1.15
0.75
0.85
0.95
1.05
- 40 160
120
80400
91083_09 TJ, Junction Temperature (°C)
RDS(on), Drain-to-Source On Resistance
2.5
(Normalized)
2.0
0.0
0.5
1.0
1.5
- 40 160
12080400
I
D
= - 1.0 A
V
GS
= - 10 V
91083_10 VDS, Drain-to-Source Voltage (V)
C, Capacitance (pF)
500
0
100
200
300
400
0 - 50- 40- 30- 20
- 10
Ciss
Crss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgs, Cgd
Cgs + Cgd
≈ Cgs + Cgd
Document Number: 91083 www.vishay.com
S11-1051-Rev. C, 30-May-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620S, SiHF9620S
Vishay Siliconix
Fig. 12 - Typical On-Resistance vs. Drain Current
Fig. 13 - Maximum Drain Current vs. Case Temperature
Fig. 14 - Power vs. Temperature Derating Curve
Fig. 15 - Clamped Inductive Test Circuit
Fig. 16 - Clamped Inductive Waveforms
Fig. 17a - Switching Time Test Circuit
Fig. 17b - Switching Time Waveforms
91083_12 ID, Drain Current (A)
RDS(on), Drain-to-Source
RDS(on) measured with current
pulse of 2.0 µs duration. Initial
TJ = 25 °C. (Heating effect of
2.0 µs pulse is minimal.)
0
1
2
3
4
5
0 - 20- 16- 8- 4 - 12
On Resistance (Ω)
V
GS
= - 10 V
V
GS
= - 20 V
150
Negative ID, Drain Current (A)
TC, Case Temperature (°C)
0.0
1.5
2.0
2.5
3.0
3.5
25
91083_13
1251007550
1.0
0.5
T
C
, Case Temperature (°C)
P
D
, Power Dissipation (W)
40
35
20
0
5
0 20 100806040
91083_14
140
120
30
25
15
10
0.05 Ω
D.U.T.
L
VDS
+
-
V
DD
VGS = - 10 V
Var y tp to obtain
required IL
t
p
VDD = 0.5 VDS EC = 0.75 VDS
EC
IL
VDD
VDS
tp
EC
IL
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
- 10 V
+
-
V
DS
V
DD
VGS
10 %
90 %
VDS
td(on) trtd(off) tf
www.vishay.com Document Number: 91083
6S11-1051-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620S, SiHF9620S
Vishay Siliconix
Fig. 18a - Basic Gate Charge Waveform Fig. 18b - Gate Charge Test Circuit
Fig. 19 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91083.
QGS QGD
QG
VG
Charge
- 10 V
D.U.T.
- 3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P.W. Period
dI/dt
Diode recovery
dV/dt
Body diode forward drop
Body diode forward
current
Driver gate drive
Inductor current
D = P.W.
Period
+
-
-
-
-
+
+
+
Peak Diode Recovery dV/dt Test Circuit
• dV/dt controlled by Rg
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
• Compliment N-Channel of D.U.T. for driver
VDD
• ISD controlled by duty factor “D”
Note
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
VGS = - 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
VDD
Re-applied
voltage
Ripple ≤ 5 % ISD
Reverse
recovery
current
Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
5
4
13
L1
L2
D
BB
E
H
B
A
Detail A
A
A
c
c2
A
2 x e
2 x b2
2 x b
0.010 A B
MM ± 0.004 B
M
Base
metal
Plating b1, b3
(b, b2)
c1
(c)
Section B - B and C - C
Scale: none
Lead tip
4
34
(Datum A)
2CC
BB
5
5
View A - A
E1
D1
E
4
4
B
H
Seating plane
Gauge
plane
0° to 8°
Detail “A”
Rotated 90° CW
scale 8:1
L3 A1
L4
L
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -
A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -
b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066
c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED