Transistors 2SC1318A Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0720A Unit: mm 4.00.2 5.10.2 5.00.2 0.70.1 12.90.5 * High collector-emitter voltage (Base open) VCEO * Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier 0.70.2 Features Absolute Maximum Ratings Ta = 25C Symbol Rating Unit VCBO 80 V Collector-emitter voltage (Base open) VCEO 70 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 0.5 A Peak collector current ICP 1 A Collector power dissipation PC 750 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 0.45+0.15 -0.1 0.45+0.15 -0.1 2.5+0.6 -0.2 2.5+0.6 -0.2 1 2 3 2.30.2 Parameter Collector-base voltage (Emitter open) 1: Emitter 2: Collector 3: Base TO-92-B1 Package Electrical Characteristics Ta = 25C 3C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 80 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 70 V Emitter-base voltage (Collector open) VEBO IE = 10 A, IC = 0 5 V ICBO VCB = 20 V, IE = 0 Collector-base cutoff current (Emitter open) Conditions Min Typ Max V 0.1 A 340 Forward current transfer ratio *1 hFE1 *2 VCE = 10 V, IC = 150 mA 85 hFE2 VCE = 10 V, IC = 500 mA 40 Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA 0.2 0.6 Base-emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA 0.85 1.50 VCB = 10 V, IE = -50 mA, f = 200 MHz 120 VCB = 10 V, IE = 0, f = 1 MHz 11 Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Unit V V MHz 20 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Publication date: March 2003 SJC00101BED 1 2SC1318A PC Ta IC VCE Ta = 25C 0.6 0.4 9 mA 8 mA 7 mA 0.8 6 mA 5 mA 0.6 4 mA 3 mA 0.4 2 mA 0.2 0.2 40 80 120 0 Ambient temperature Ta (C) 2 Ta = 75C 25C -25C 0.01 100 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) 1 0.001 10 100 75C 0.1 1 100 120 80 40 -10 -100 10 Ta = 75C 200 25C -25C 150 100 50 0 1 000 1 10 100 1 000 Collector current IC (mA) ICBO Ta 104 IE = 0 f = 1 MHz Ta = 25C VCB = 20 V 40 103 ICBO (Ta) ICBO (Ta = 25C) 160 8 250 Cob VCB 50 6 VCE = 10 V Collector current IC (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Transition frequency fT (MHz) 10 4 hFE IC Ta = -25C 1 1 000 VCB = 10 V Ta = 25C Emitter current IE (mA) 2 2 300 25C fT I E 0 -1 0 Base current IB (mA) IC / IB = 10 Collector current IC (mA) 200 0 10 10 0.01 1 8 0.4 VBE(sat) IC IC / IB = 10 0.1 6 0.6 Collector-emitter voltage VCE (V) VCE(sat) IC 10 4 0.8 0.2 1 mA 0 160 1.0 Forward current transfer ratio hFE 0 VCE = 10 V Ta = 25C IB = 10 mA 1.0 0.8 1.2 Collector current IC (A) 1.0 0 IC I B 1.2 Collector current IC (A) Collector power dissipation PC (W) 1.2 30 20 102 10 10 0 1 10 Collector-base voltage VCB (V) SJC00101BED 100 1 0 40 80 120 160 Ambient temperature Ta (C) 2SC1318A ICEO Ta 105 VCE = 10 V ICEO (Ta) ICEO (Ta = 25C) 104 103 102 10 1 0 40 80 120 Ambient temperature Ta (C) SJC00101BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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