New Product
GSIB2020N, GSIB2040N, GSIB2060N, GSIB2080N
www.vishay.com Vishay General Semiconductor
Revision: 15-Aug-11 1Document Number: 89388
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-Iine package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 2500 VRMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
•Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
MECHANICAL DATA
Case: GSIB-5S
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum
Recommended Torque: 5.7 cm-kg (5 in-lbs)
Notes
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on PCB without heatsink
PRIMARY CHARACTERISTICS
IF(AV) 20 A
VRRM 200 V to 800 V
IFSM 240 A
IR10 μA
VF1.0 V
TJ max. 150 °C
Case Style GSIB-5S
~
~~~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GSIB2020N GSIB2040N GSIB2060N GSIB2080N UNIT
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V
Maximum RMS voltage VRMS 140 280 420 560 V
Maximum DC blocking voltage VDC 200 400 600 800 V
Maximum average forward rectified
output current at
TC = 87 °C IF(AV) (1) 20 A
TA = 25 °C IF(AV) (2) 3.5
Peak forward surge current single sine-wave
superimposed on rated load IFSM 240 A
Rating for fusing (t < 8.3 ms) I2t 240 A2s
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
New Product
GSIB2020N, GSIB2040N, GSIB2060N, GSIB2080N
www.vishay.com Vishay General Semiconductor
Revision: 15-Aug-11 2Document Number: 89388
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on PCB without heatsink
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GSIB2020N GSIB2040N GSIB2060N GSIB2080N UNIT
Maximum instantaneous
forward voltage drop per diode IF = 7.5 A VF1.0 V
Maximum DC reverse current at
rated DC blocking voltage per diode
TA = 25 °C IR
10 μA
TA = 125 °C 250
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GSIB2020N GSIB2040N GSIB2060N GSIB2080N UNIT
Maximum thermal resistance RJA (2) 22 °C/W
RJC (1) 1.5
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GSIB2060N-M3/45 7.0 45 20 Tube
0
15
20
7550250 100 125 150
10
5
25
30
Heatsink Mounting, T
C
PCB Mounting, T
A
Temperature (°C)
Average Forward Output Current (A)
0
50
100
150
200
300
350
400
1 100
10
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
1.0 Cycle
New Product
GSIB2020N, GSIB2040N, GSIB2060N, GSIB2080N
www.vishay.com Vishay General Semiconductor
Revision: 15-Aug-11 3Document Number: 89388
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.6 1.0 1.2 1.40.8
0.01
0.1
10
1
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0406020 10080
0.1
1
100
10
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
A
= 125 °C
T
A
= 25 °C
101 100
1000
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
10
1
0.1
0.1 1010.01
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
2.5 ±0.2
2.2 ±0.2
1±0.1
10 ±0.2
7.5
±0.2
4±0.2 5
20 ±0.3
17
.5±0.5
11 ±0.2
2.7 ± 0.2
3.5 ±0.2
3.2 ±0.2
0.7 ± 0.1
4.6 ±0.2
3.6 ±0.2
+
7.5
±0.2
30 ±0.3
Case Style GSIB-5S
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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