Philips Semiconductors Product specification NPN medium power transistor BC868 FEATURES PINNING e High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 20 V). 1 emitter 2 collector APPLICATIONS 3 base e General purpose switching and amplification Power applications such as audio output stages. DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complement: BC869. 3 MARKING TYPE NUMBER MARKING CODE 1 2 3 BC868 CAC Bottom view MAMe96 BC868-10 CBC BC868-16 ccc BC868-25 cDC Fig.1 Simplified outline (SOT89) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Veso collector-base voltage open emitter - 32 Veceo collector-emitter voltage open base ~ 20 lom peak collector current - 2 Prot total power dissipation Tamb S 25 C - 1.4 Here DC current gain Ic = 500 MA; Vee =1V 85 375 fr transition frequency Io = 10 MA: Voce = 5 V; f= 100 MHz | 40 ~ MHz sipl<l< 1997 Mar 19 359 Philips Semiconductors Product specification NPN medium power transistor BC868 LIMITING VALUES in accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vero collector-base. voltage open emitter ~ 32 Vv VcEO collector-emitter voltage open base - 20 Vv Vego emitter-base voltage open collector _ 5 Vv Io collector current (DC) - 1 A lom peak collector current _ 2 A I5m peak base current - 200 mA Prot total power dissipation Tamp S 25 C; note 1 - 1.4 Ww Tstg storage temperature -65 +160 C T; junction temperature - 150 Tamb operating ambient temperature ~65 +150 C Note 1, Device mounted on a printed-circuit board, single sidd copper, tinplated, mounting pad for collector 1 em?. For other mounting conditions, see Thermal considerations for SOT89 in the General part of handbook SC04". THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rin j-a thermal resistance from junction to ambient note 1 89 KAW Pith j-s thermal resistance from junction to soldering point KW Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm?. For other mounting conditions, see Thermal considerations for SOT89 in the General part of handbook SCO4. 1997 Mar 19 360 Philips Semiconductors Product specification NPN medium power transistor BC868 CHARACTERISTICS T; = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT loko collector cut-off current le = 0; Veg = 25 V - ~ 100 [nA te = 0; Vog = 25 V; Tj = 150 C _ - 10 HA feBo emitter cut-off current lo = 0; Veg = 5 V - - 160 nA Hee DC current gain Ilo = 5 MA; Vee = 10 V 50 ~ - Nee DC current gain Voce = 1 V; see Fig.2 le = 500 mA 85 ~ 375 loz 1A 60 ~ - Nee DC current gain lc = 500 MA; Voe = 1 V; see Fig.2 BC868-10 - ~ 160 BC868-16 100 |- 250 BC868-25 160 |- - Veesat collector-emitter saturation voltage | Ic = 1 A; lg = 100 mA - ~ 500 mV Vee base-emitter voltage lo =5 MA; Vee = 10 V _ 620 - mV Ie = 1A; Voe=1V - - 1 Vv fr transition frequency lo = 10 MA; Voge = 5 Vi f= 100 MHz | 40 - - MHz Ree, DC current gain ratio of the lig) =0.5 A; |Vcel = 1V - - 1.6 Ares complementary pairs MGDe44 300 | tre 250 200 150 100 50 So 1 10 102 10% Ie (ma) 104 Voce =1V. Fig.2 DC current gain; typical values. 1997 Mar 19 361