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2GB / 4GB / 8GB (x64)
1.35V DDR3 SDRAM SODIMM
2GB / 4GB / 8GB (x64) 1.35V DDR3 SDRAM SODIMM Micron Technology, reserves the right to change products or specifications without notice..
CT0114.fm - Rev. 08/08/11 1©2011 Micron Technology
1.35V DDR3 SDRAM SODIMM
CT25664BF
CT51264BF
CT102464BF
Features
DDR3 functionality and operations supported as
defined in the component data sheet
204-pin, small outline dual in-line memory module
(SODIMM)
Fast data transfer rates: PC3-12800, or PC3-10600
2GB (256 Meg x 64), 4GB (512 Meg x 64), and 8GB (1024
Meg x 64)
VDD = 1.35V (1.283V to 1.45V)
Backward compatible to VDD = +1.5V ±0.075V
VDDSPD = +3.0V to +3.6V
Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
On-board I2C temperature sensor with integrated
serial presence-detect (SPD) EEPROM
Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Halogen-free
Fly-by topology
Terminated control, command, and address bus
Serial Presence-Detect (SPD) EEPROM
Gold edge contacts
•RoHS compliant
1.18” (30.00mm) PCB Height
TAA compliant parts available upon request
Timing Parameters
Module Module Latency
Marking Bandwidth (CL - tRCD - tRP)
160B 12.8 GB/s 11 - 11 - 11
1339 10.6 GB/s 9 - 9 - 9
Part Numbers
Module Memory Clock/ Banking Component
Part Number* Density Data Bit Rate Configuration Configuration
CT25664BF160B 2GB 1.25ns/1600 MT/s Single 256 Meg x 8
CT25664BF1339 2GB 1.5ns/1333 MT/s Single 256 Meg x 8
CT51264BF160B 4GB 1.25ns/1600 MT/s Single 512 Meg x 8
CT51264BF1339 4GB 1.5ns/1333 MT/s Single 512 Meg x 8
CT102464BF160B 8GB 1.25ns/1600 MT/s Dual 512 Meg x 8
CT102464BF1339 8GB 1.5ns/1333 MT/s Dual 512 Meg x 8
Note: Each part number listed in this data sheet may be available in multiple configurations. While configurations
for any given part number may vary, they will all be compatible and will not have a PCB height greater than 1.18”.
* TAA compliant parts will have a “T” at the end of the listed part number (i.e. CT25672BF1339T)