Numerical Index 2N2425 -2N2521 al MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS sie = = ~~ = | = | REPLACE- | PAGE Po {El | Vos | Vcc. | = fee @ Ie Voesan @ le 2) foie TYPE 12/3] ment | Numper | USE Bl g alu [Bl els =\e @ WC | S) C | (volts) | (volts) |S | (min) (max) 3| (volts) 5 3S S/3 2N2425 | S| P MSS | 375M} A | 160 50 10] 0], 25} 110] 5.0M 0.3 15M 10M | B 2N2426 | GIN AFA | 150M] A] 100 40 257R 0.5 100M 35 /E 25K | E 2N2427 S| N RFA O.5W] A | 200 40 40 | 0 20 60 10* 40 |E 50M | T 2N2428 G| P | 2N652 6-20 AFC O.5w]A 75 32 32] 58 50} 150 2.0M 80 ]/E 10K | E 2N2429 | G] P | 2N652 6-20 | AFC] O.5W[ A] 75 32 32] S | 65] 300} 2.0M 130 | E 10K | E 2N2430 G]N AF 0,28W|A 75 32 32 ]R 60 | 210 O.1A 1OK | E 2N2431 1G] P AFC] 0.55W} A] 90 32 32] R |] 60/175) 0.3A 10K | 2N2432 | S| N CHP | 300M | A | 175 30 30,01 50 1.0M] 0.15 10M 20M | T 2N2432A |} S| N CHP 300M | A | 175 45 4510 50 1.0M 20M | T 2N2433 S| N HSS 500M | A | 200 75 4510 40} 120 150M 1.5 150M 30} E 80M | T 2N2434 | S| N HSS | 500M] A | 200 75 45 | 0 |100/ 300] 150M 1.5 150M S50/E 90M | T 2N2435 | S| N uss} 500M(A {200} 120] 80|/o0| 40[120| 150m] 3.0] 150m] 30|R | 80m|T 2N2436 | S| N HSS | 500M| A] 200] 120 80; 0] 100} 300} 150M 3.0} 150M 50 /E 90M | T 2N2437 | S| N VID| 500M!A]200, 100 75; O)} 15 10M 0.2 10M 18] E 70M | T 2N2438 S| N VID 500M | A | 200 100 7540 35 LOM 0.4 50M 36]5 80M | T 2N2439 S| N VID 500M | A | 200 100 7540 75 10M 0.4 50M 76/E 90M | T 2N2440 S| WN HSS 300M | A | 200 120 80 | Oo | 100 | 300 150M 0.4 50M 50 ]E 90M | T | 2N2443 S| N RFA 800M | A | 200 120 100 | Oo 50] 150 50M 1.2 50M 45 | E 50M |T 2N2444 | G|P LPA 85w} Cc } 110 80 80]0] 901120] 3.0A 1.0] 5.0A S50/E}] 4.5M]T 2N2445 Gi P LPA 90W | C | 100 100 50] 0 30 60 10A 1.0 104 307 E o.1M/T 2N2446 | G| P PMS 90w | C | 100 60 50{ 5 15] 45] 5.0A 1.5 7.0A 3.0K |E 2N2447 G| Py 2N1187 6-25 AFA 75M | A 85 45 2410 25 ],E 2N2448 G| P { 2N1L187 6-25 AFA 75M |]A 85 45 24} 0 25 ]/E 2N2449 GJ Pj 2N652 6-20 AFA 75M 1A 85 35 20 | 0 50 |E 2N2450 Gi P ) 2N652 6-20 AFA FSM A 85 35 20) 0 50) E 2N2451 G| P HSS 25M 1A 85 6.0 5.0] 0 25 10M o.1 LOM 40 |E 80M | T 2N2452 S}N SPP 500M | A | 200 100 80]R 2N2453 S| N DFA O.5W] A | 200 60 30 | 0 | 150 | 600 1.0M 1.0 5.0M 150] E 60M | T 2N2453A |] S| N DFA 0.5W | A | 200 80 5010 4150] 600 1.0M 1.0 5.0M 150 /E 60M | T 2N2454 Thyristor, see Table on Page 1-154 2N2455 G|P RSA 150M | A | 100 15 15 | $8 20 { 100 2.0M 0.19 LOM 30 | E 600M [| T 2N2456 G] P HSA 150M | A ] L0G 15 15|s 20 | 100 2.0M 0.19 10M 30] E 1.06 | T 2N2459 S| N AFA 0.4W | A } 200 Loo 60 | 0 10 0.1M 0.3 10M 40 [E 100M | T 2N2460 | S| N AFA | 0.4W]A |] 200; LOO 60/0] 20 0.1M 0.3 10M JO} E 120M | T 2N2461 | S| N AFA| 0.4W | A | 200 100 60}; 07 40 0.1M 0.3 LOM] 115 ]E | 140M) T 2N2462 | S| N AFA | 0.4W | A | 200 100 60} 014 60 0.1M 0.3 10M j 160|E | 160M; T 2N2463 S| N AFA 0.5W | A | 200 100 60] 0 10 0.1M 0.3 10M 40 /E 100M | T 2N2464 Sj) N AFA O.5W PA 7200 100 60) 0 20 0.1m 0.3 10M JOVE 120M | T 2N2465 S|N AFA O.5W] A | 200 LOO 60 | 0 40 0.1M 0.3 10M 1I5]E 140M | T 2N2466 S|N AFA O.5wW] A | 200 100 6040 60 0.1M 0.3 LOM 160 |E 160M | T 2N2467 GT; P LPA 5.0W | C |] 110 60 30/0 30 90 0.5A 0.4 1.0A 40 | E 20M | T 2N2468 G| P LPA 5.0W |] Cc} 110 Loo 60] 0 30 90 0.5A 0.4 L.0A 40 /E 20M | T 2N2469 G| P LPA 5,0W |) Cc} 110 200 100 | 0 30 90 O.5A 0.4 1.04 40 /E 20M | T 2N2472 | S|N LPA} 1.0W 4A | 175 120 | 100|0 | 30] 90] 0.24 1.7} 0.24 30 | E LOM | T 2N2473 Ss] N LPA 1.0W] A 4175 120 100 ;0 30 90 0.2A 1.7 O.2A 30 /E 10M | T 2N2474 Ss] P AFA 250M | A ] 160 30 15 [0 |8.0 100* | 0.126 10M 8.0 /E 2N2475 S| N HSS 300M | A | 200 15 6.0]0 20 20 50M 6.07 E 2N2476 S|N 8-142] HSS 2.0W | C | 200 60 20/0 20 150M 0.4 150M 250M | T 2N2477 S]N 8-142] HSS 2,0W jC | 200 60 20; 0 40 150M 0.4 150M 250M | T 2N2478 S}N | 2N2218 8-108] HSS 600M | A} 175 120 40} 0 30 150M 0.7 150M 200M | T 2N2479 S\N 4 2N2218 8-108) HSS 600m | A | 175 80 40) 0 30} 120 150M 0.85 150M oO} E 150M | T 2N2480 | S|N 11-6 | DFA] 0.3W] A | 200 75 40|]0] 30] 350) 1.0M 1.3 50M 50M | T 2N2480A | S| N 11-6 DFA 0.3W |] A | 200 80 40/0 50 | 200 1.0M 1.2 50M 5O|E 50M | T 2N2481 s|N 8-144] HSs 1.2W | Cc | 200 40 15 ]0 40 | 120 10M 0.25 LOM 300M | T 2N2482 GIN REA 150M] A 20 15 {$s 25 | 200 2.0M 15 /E 2N2483 S| N | MM2483 8-320] AFA 360M | A | 200 60 60 | 0 40 | 120 Lo* 0.35 1,.0M 80 /E 12M {T 2N2484 S| N | MM2484 8-320] AFA 360M | A | 200 60 60 | 0 | 100 | 500 10* 0.35 1.0M 150 [E 15M | T 2N2485 S|N HPA 8.8Ww | Cc |] 200 120 120 |] 0 10 O.5A 100M | T 2N2486 S|N HPA 8.8W | Cc | 200 140 140 |c 10 0.54 100M | T 2N2487 GIP HSS 60M | A } 100 15 10 ] 20 LOM | 0.175 40M 360M [T 2N2488 G]P HSS 60M | A | LOO 15 10 | 0 20 50M {0.175 15M 360M | T 2N2489 GtP HSS 60M | A | 100 20 15 | 0 20 10M 0.18 LOM 300M | T 2N2490 Gy] P 7-86 PMS 170w | c | 110 70 60/5 20 40 5.04 0.7? 124 5.0K], E 2N2491 G\P 7-86 PMS 17OW ;C | 110 60 so0j\s 35 70 5.04 O.7 128 5.0K, E 2N2492 G]P 7-86 PMS L70W | C | 110 80 7041S 25 50 5.0A 0.5 124 5.0K /E 2N2493 G| P 7-86 PMS 170W | C | 110 100 85 }S 25 50 5.0A 0.5 12A 5-OK|E 2N2494 Gj P RFC 83M A 75 20 20 /V 25 1.0M 2N2495 GIP RFC 125M | A | 100 40 40 |S 25 1.0M 2N2496 G|P RFC 100M | A | 100 40 20 |v 25 1.0M 2N2497 thru Field Effect Transistors, see Table on Page 1-166 2N2500 2N2501 s[n] | 8-148[ uss[To.36w]a]2007 40 20 ]o0] 50 | 150 1om | 0.2 LOM 350M | 1 N2502 thru Thyristors, see Table on Page 1-154 2N2508 2N2509 S|[N VID 1.2W | c | 200 125 80 | 0 25 1o* 1.0 5.0M 45M |T 2N2510 S]N VID 1.2W | c | 200 L100 65 10 | 150 | 500 LOM 1.0 5.0M 45M [T 2NZ511 S| N | 2N3444 8-214] VID 1L.2W }C | 200 80 50 | 0 | 240 | 750 LOM 1.0 5.0M 45M | T 2N2512 G| P VID | O.15W]A 75 70 7O)R 20 L.0M 40] E 140M | T 2N2514 S|N AFA 0.4w | A | 200 80 60 | 0 15 50 5.0M 0.5 LOM 20]/E 30M | T 2N2515 S]N AFA O.4Ww } A | 200 80 60/0 30 | 100 5.0M 0.5 10M 40 /F 60M} T 2N2516 S]N AFA 0.4W | A | 200 80 60 | 0 60 | 200 5.0M 0.5 10M 80]/E LOOM | T 2N2517 S|N AFA o.4W [A | 200 125 80 | 0 15 50 5.0M Q.5 LOM 20 (E 30M | T 2N2518 S|N AFA O.4W | A | 200 125 80] 0 30 | 100 5.0M 0.5 10M 40]/E 60M | T 2N2519 S|N AFA 0.4W | A | 200 125 80 | 0 60 | 200 5.0M 0.5 LOM 80 )E 100M | T 2N2520 S| N AFA 0.4W | A | 200 60 60 | 0 12 1.0M 0.5 10M 18 |E 50M [5B 2N2521 S|N AFA O.4W {A | 200 60 60 | 0 25 1.0M 0.5 LOM 36 | E 50M | B 1-129KX KX AANAR WN AN .MW\MWQ Q QA MAG ~ ANNALARA WS AAS WN WS WK QQ SS SX NS ANANAN WG WAAR! IQui'_'w y K\WYW MN NS SS ~ NS LL WH WL WS NS WAAAN WS Switching and General Purpose Transistors QUICK SELECTOR GUIDES SILICON HIGH-SPEED SWITCHING AND GENERAL PURPOSE TRANSISTORS The following two tables categorize the silicon devices included in this section into two classifications those intended for general-purpose switching and amplifier applications, and those recommended primarily for high-speed saturated switching purposes. Only the preferred devices those that merit first consideration for new designs are listed. In each table, the devices are grouped in voltage and current ranges. The voltage given is the minimum collector-emitter breakdown voltage (BVc RO): The current range columns represent operating current values for which optimum current gain (hpp) and/or collector-emitter satura- tion voltage (VoR(sat)) are specified in the data sheets. SATURATED SWITCHING TRANSISTORS (SILICON) Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcro Oto 10mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.08 LOAtO3.0A 3.0A to 5.0A Min Volts NPN PNP NPN. PNP NPN PNP NPN PNP NPN PNP NPN PNP o 2N3010 2N2894 2N2369A| 2N2894 2N3009 2N3303 2N3303 2N3493 | 2N3546 2N3009 | 2N3546 2N3013 MM709 | 2N4411 2N3010 2N3510 MM1748 2N3011 2N3511 2N3013 2N3647 2N3210 2N3648 19 2N3211 20 2N702 2N2501 2N24%6 2N703 2N3014 2N2477 | 2N3227 2N2501 2N3508 2N2847 29 2N3509 2N2848 30 2N2537 2N2537 2N3252 2N3734 2N2538 2N2538 2N3724 2N3736 2N2539 2N2539 2N3734 2N2540 2N2540 2N3736 2N2845 2N4013 2N2846 2N4046 2N3015 2N3724 2N4013 39 2N4046 40 2N3725 2N3725 | 2N3467 2N3253 | 2N3467 2N3444 | 2N3762 2N3506 2N4014 2N4014 | 2N3468 2N3444 | 2N3468 2N3735 | 2N3764 2N3507 2N4047 2N3725 | 2N3762 2N3737 2N3735 | 2N3764 2N3737 2N4014 59 2N4047 60 2N3763 2N3763 79 2N3765 2N3765 Switching and General Purpose Transistors 2N2476 (siticon) Vero = 20V 9477 f; = 250 MHz 2N Pp = 600 mW NPN silicon annular transistors designed for high- speed, low-power saturated switching applications. CASE 31 Collector connected to case (TO-3) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VcEo 20 Vdc Collector-Base Voltage Vop 60 Vde Emitter-Base Voltage Veep 5.0 Vdc Total Device Dissipation @ Ty = 25C Py 0.6 Watt Derate above 25C 3.4 mWw/C Total Device Dissipation @ To = 25C Py 2.0 Watts Derate above 25C 11.4 mw/C Operating & Storage Junction T,,T -65 to +200 C T stg emperature Range 15.9V PW >150 ns D.C. < 2% *Input and output waveforms monitored by means of an oscilloscope or other indicating device having a rise time<0.5 ns; input capaci- tance of probe < 2.5 pF with shunt resistance 21 megohm. 8-142 Switching and General Purpose Transistors 2N2476, 2N2477 (continued) ELECTRICAL CHARACTERISTICS (T, =: 25C unless otherwise noted) | Characteristic | Symbol Min | Max | Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* BVoro* Vde (I, = 50 mAdc, Ib = 0) 20 - Collector-Base Breakdown Voltage BV ogo Vde Me = 10 wAde, l, = 0) 60 - Emitter-Base Breakdown Voltage BVERO Vde Gy, = 100 uAde, I, = 0) 5.0 - Collector Cutoff Current logo wAdc = = - 0.2 Vop 30 Vdc, lL, 0) = = = - 200 Vag 30 Vdc, In 0, Ty 150C) Emitter Cutoff Current lBo uAde Vie = 5.0 Vdc, In = 0) * - 100 ON CHARACTERISTICS DC Current Gain hor - (le = 150 mAdc, Vor = 0. 4 Vdc) 2N2476 20 - 2N2477 40 - Collector-Emitter Saturation Voltage Vor(sat) Vde My 150 mAdc, Ip -~ 7.5 mAdc) 2N2476 - 0.4 le 150 mAdc. Ip 3.75 mAdc) 2N2477 ~ 0.4 ly ~ 500 mAdc, In ~ 50 mAdc) 2N2476 - 0.75 2N2477 ~ 0.65 Base-Emitter Saturation Voltage VBE(sat) Vde Te 150 mAdc, Ip 7.5 mAdc) 2N2476 . - 1.0 Ge - 150 mAdc, Ip = 3.75 mAdc) 2N2477 - 0.95 DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product fy MHz Mg = 50 mAde, Vor =10 Vdc, f = 100 MHz) 250 - Output Capacitance Cop pF (Vop = 10 Vde, I, = 0, f = 140 kHz) - 10 Turn-On Time (Figure 1) on ns Woe = 6.4 Vdc, Ip = 150 mAde, I, = 15 mAdc) - 25 Turn-Off Time (Figure 2) tore ns Woe = 6.4 Vdc, Io = 150 mAdc, Iai = Ibo = 15 mAdc) - 45 Storage Time (Figure 2) te ns I, = 150 mAdc, Tat = lpo - 15 mAdc) - 25 * Pulse Test: pulse width 400 us, duty cycle <= 3%. FIGURE 2 TURN-OFF TIME TEST CIRCUIT Vogt 604 0 ~10% PW>150 ns V t D.C. < 2% i t 402 4 * ing fj e902 17.7V out 12 nse y 0 2 j(max) in 4 6200 | sz 6.4 Z=502 vy 20 ra v 502 1000 ou 1 2 Hee 110% : Lr > te Vi p15. BB 15.9V *Input and output waveforms monitored by means of an oscilloscope or other indicating device having a rise time<0.5 ns; input capaci- tance of probe < 2.5 pF with shunt resistance 21 megohm. 8-143