© 2012 IXYS CORPORATION, All Rights Reserved DS100159D(01/12)
High Voltage
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
zIsolated Mounting Surface
z4000V~ Electrical Isolation
zMolding Epoxies meet UL 94 V-0
Flammability Classification
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh Voltage Power Supplies
zCapacitor Discharge Applications
zPulse Circuits
zLaser and X-Ray Generation Systems
IXTF1N400
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 4000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ4000 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C1A
IDM TC= 25°C, Pulse Width Limited by TJM 3A
PDTC= 25°C 160 W
TJ- 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
FC Mounting Force 20..120 / 4.5..27 N/lb.
VISOL 50/60Hz, 1 Minute 4000 V~
Weight 5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = 3.2kV, VGS = 0V 50 μA
VDS = 4.0kV 250 μA
VDS = 3.2kV Note 2, TJ = 100°C 250 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 60 Ω
VDSS = 4000V
ID25 = 1A
RDS(on) ≤ ≤
≤ ≤
≤ 60ΩΩ
ΩΩ
Ω
1 = Gate 5 = Drain
2 = Source
ISOPLUS i4-PakTM
Isolated Tab
1
5
2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTF1N400
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 50V, ID = 0.5 • ID25, Note 1 0.55 0.95 S
Ciss 2530 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 93 pF
Crss 30 pF
td(on) 28 ns
tr 24 ns
td(off) 81 ns
tf 90 ns
Qg(on) 78 nC
Qgs VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 10 nC
Qgd 35 nC
RthJC 0.78 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 1 A
ISM Repetitive, Pulse Width Limited by TJM 5 A
VSD IF = 1A, VGS = 0V, Note 1 4 V
trr IF = 1A, -di/dt = 100A/μs, VR = 200V 3.5 μs
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
RG = 2Ω (External)
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp Idss measurement.
ISOPLUS i4-PakTM (HV) Outline
Pin 1 = Gate
Pin 2 = Soure
Pin 3 = Drain
Pin 4 = Isolated
© 2012 IXYS CORPORATION, All Rights Reserved
IXTF1N400
Fi g . 1. Ou tp u t C har acter i sti cs @ T
J
= 25ºC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 5 10 15 20 25 30 35 40 45 50
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
4.5V
4V
5V
3V
Fi g . 3. Ou tp u t C h a r acter i sti cs @ T
J
= 125ºC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 102030405060708090100
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
5V
4V
3V
Fig. 4. R
DS(on)
Normalized to I
D
= 0. 5A Valu e
vs. Ju n ctio n Temp er atu r e
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 1.0A
I
D
= 0. 5A
Fig. 5. R
DS(on)
Normalized to I
D
= 0.5 A Valu e
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4
I
D
- MilliAmperes
R
DS(on)
- Normal ized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current
vs. C ase Temp er atu re
0
0.2
0.4
0.6
0.8
1
1.2
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fi g . 2. Exten ded Ou tp u t C h ar acteri sti cs @ T
J
= 25ºC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 50 100 150 200 250 300 350 400
V
DS
- Vo lts
I
D
- Am pe res
V
GS
= 10V
4.5V
4V
5V
3V
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTF1N400
IXYS REF: T_1N400(8P)8-25-09-A
Fig. 7. Input Admittance
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
GS
- V olts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. T ransconductance
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 0.2 0.4 0.6 0.8 1 1.2 1.4
I
D
- A mp e re s
g
f s
- S iemens
T
J
= - 40ºC
125ºC
25ºC
Fi g. 9. F o r war d Vo l tage D ro p o f In tr i n sic D i od e
0
0.4
0.8
1.2
1.6
2
2.4
00.511.522.533.5
V
SD
- V olts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 1020304050607080
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 1000V
I
D
= 0.5A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - PicoFarads
f = 1 MHz
Ciss
Crss
Coss
Fi g. 12. Maximu m Transi ent Ther mal I mped an ce
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
