88) D MM 4235605 O01487b b MMSIEG : 88D 14876 0D T-29-C3 BUZ 201 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel, Drain-source voltage Vg = 400V ~ Continuous drain current h = 125A Draln-source on-resistance Aygo, = 0,40 G s Description FREDET with fast-recovery reverse diode, N-channel, enhancement mode Case Metal case 3A2 in accordance with DIN 41 872, or TO 204 AA (TO 3) in accordance with JEDEC. Approx. weight 12 g Type | Ordering code BUZ 201 | C67078-A1101-A2 16 S$ g4o% G l mm BY 9,5 2005 - le 38,84 = I 10,920.35 25 42055 11,8233 1} max. bending area Dimensions in mm Maximum ratings Description Symbols | Ratings Units Conditions Drain-source voltage Vos 400 Vv Drain-gate voltage Vocr 400 Vv Reg = 20 kQ Continuous drain current Io 12,5 A To =390C Pulsed drain current Jopuis 50 A To = 25C Gate-source voltage Vas +20 Vv Max. power dissipation Po 125 Ww To = 25C Operating and storage qi temperature range Taig 65...+150 | C DIN humidity category CG - DIN 40040 IEC climatic category 55/150/56 DIN IEC 68-1 Thermal resistance Chip case Anse <1,0 K/W Chip ~ ambient | Ain aa | <35 K/W | 586 1168 G=-O138) D MM 8235605 OO we ete Ceram eS aan L4a7? 8 MMSIEG i gap 14877. 0 )aT-/o BUZ 201 SIEMENS AKTIENGESELLSCHAF Electrical characteristics (at 7; = 25C unless otherwise specified) Description Symbol | Characteristics Unit | Conditions min. | typ. | max. Static ratings Drain-source Veross | 400 | - Vv Veg = OV breakdown voltage Ip =0,25mA Gate threshold voltage Vas (th) 21 3,0 4,0 Vog = Ves Ih =1mA Zero gate voltage loss ~ 20 250 pA 17 = 25C drain current - 100 | 1000 TT = 126C Vog = 400V Veg = OV Gate-source leakage Tess - 10 100 nA Veg = 20V current Vos = OV Drain-source Fos on) - 035 {040 {Q Veg = 10V on-resistance ih = 8A Dynamic ratings Forward Fs 33 |52 - s Vog = 25V transcgnductance I, = 8A Input capacitance Crs - 38 49 nF Veg = OV Output capacitance Coss |300 [500 |pr | Ms = an Reverse transfer Cras - 120 | 200 fo- 2 capacitance Turn-on time t, bs tony _ 50 75 ns Voo = 390V (fon = fa ion + &) t - 80 420 bh = 298A Turn-off time ty ty - 330 | 430 Ves = 10V {off) Agg = 50Q (fir = Faron + f) f [110 | 140 Fast-recovery reverse diode Continuous reverse Jor - - 125 |A Toe = 26C drain current Pulsed reverse drain lonm ~ - 50 current Diode forward on-voltage Yeo - 1,3 1,7 Vv ik =2x ha Veg = OV, T; = 25C Reverse recovery time t - 180 | 250 ns i= 25C |i = lp, - | 220 | 300 = 150C eS Reverse recovery charge Q, - 0,65 | 1,2 uC |= 26C) y HS = = - 26 |50 = 150C | 100V Repetitive peak reverse Tham - - - A R= 25C current _ 15 _ = 150C 587 1169 6-02 Dante ee, oe Qa) D MM 8235605 0024878 T MMSIEG TAG S/3 SIEMENS AKTIENGESELLSCHAF 39/3 BUZ 201 Power dissipation Py = f(7) Typical autput characterlatles Ip = f( Vos) parameter: 80 js pulse test, 7, = 26C 30 140 ={25W W A 120 Po lh 100 i 20 $ 80 ; 60 10 40 20 4 % 10 20 Vv 30 0 50 100 C 180 V To Os Safe operating area Ip = *(Yos) Typical transfer characteristic Ip = f(Vgs} parameter: D = 0.01, To = 25C parameter: 80 is pulse test, Vog = 28V, Tj = 25C 10 25 A 5 fy A fo 20 10 5 15 10 10 5 5 10 0 10 5 10! 5 10 Sv10 0 5 Vv 10 Vp>5 _ Vas 1170 G-03a8) D MM 8235605 OOL4879 1 MMSIEG aie : F238aG-/a SIEMENS AKTIENGESELLSCHAF 7-394</3 BUZ 201 1 Typical drain-source on-state resistance Drain-source on-state resistance j Fos (ony = ftp) Fos (on) = (7) parameter: Vgg; Tj = 25C parameter: Ip = 4,2A, Vgg = 10V (spread) - 15 10 Q Q) Rosteni09 Rasiont Yes 5V 08 07 10 : 06 i 0s s 04 05 03 02 01 0 a 0 50 00 c (150 Ig ___ I; Typical transconductance g, = f (Jp) Gate threshold valtage Vesrin) = (7)) parameter: 80 1s pulse test, parameter: Vog = Vag, fp = IMA Vos = 25V, 7] = 25C (spread) 5 Ne v Yaseen 0 0 5 10 iS A 20 -50 0 50 100 C 150 ty I 589ad OO ee -- BaD D MM 8235605 0024880 & MMSIEG SIEMENS AKTIENGESELLSCHAF 739~/3 BUZ 201 Typical capacitances C = f(Vpg) Continuous drain current Ip = f(Tc) parameter: Vag = 0, f = 1MHz parameter: Vag 2 10V 10! 5 nF ec s A ty 10 0 10 20 30 V 40 = Vos Forward characteristic of reverse diode Ip = # (Yep) parameter: 7), & = 80 ps (spread) 10? A 5 he 25Ctyp. 1 | 150Ctyp. 10 5 10ai SIEMENS AKTIENGESELLSCHAF T-39-/3 SBD D MM 8235605 OOL4881 T MMSIEG _ 2 thac 40 10" 10? 15 Yes oy 10 BUZ 201 Transient thermal Impedance 2,36 = f() parameter: D = t,/T - as W 5 we 85 10% 1009 65 102 65 Ot OS os 19! -} Typical gate-charge Vag = (Q, parameter: Jp pus = 173A (oat) 0 20 40 60 80 100 nC 120 _ QGate 591