APTGT50TA60P - Advanced Power Technology

APTGT50TA60P

APTGT50TA60P – Rev 0, May, 2005

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Absolute maximum ratings

Symbol Parameter Max ratings Unit

VCES Collector - Emitter Breakdown Voltage 600 V

TC = 25°C 80

IC Continuous Collector Current TC = 80°C 50

ICM Pulsed Collector Current TC = 25°C 100

A

VGE Gate – Emitter Voltage ±20 V

PD Maximum Power Dissipation TC = 25°C 176 W

RBSOA Reverse Bias Safe Operating Area TJ = 150°C 100A @ 550V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

VBUS1 VBUS2 VBUS3

W

E6

0/VB US3

V

G6

E5

0/VB US1

G2

E1

E2

0/VB US2

U

E3

E4

G4

G1 G3 G5

G5

G6

E6

E5

G3

VBUS 2 VB US 3

G4

E4

WV

E3 0/VB US 3

0/VB US 2

G1

VBUS 1

U

E2

G2

0/VBUS 1 E1

VCES = 600V

IC = 50A @ Tc = 80°C

Applicatio

n

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Motor control

Features

• Trench + Field Stop IGBT® Technology

- Low voltage drop

- Low tail current

- Switching freque ncy up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- Avalanche energy rated

- RBSOA and SCSOA rated

• Kelvin emitter for easy drive

• Very low stray inductance

- Symmetrical design

- Lead frames for power connections

• High level of integration

Benefits

• Stable temperature behavior

• Very rugged

• Solderable terminals for easy PCB mounting

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Easy paralleling due to positive TC of VCEsat

• Very low (12mm) profile

• Each leg can be easily paralleled to achieve a phase

leg of three times the current capability

• Module can be configured as a three phase bridge

• Module can be configured as a boost followed by a

full bridge

Triple phase leg

Trench + Field Stop IGBT®

Power Modul

e

APTGT50TA60P

APTGT50TA60P – Rev 0, May, 2005

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 600V 250 µA

Tj = 25°C 1.5 1.9

VCE(sat) Collector Emitter Saturation Voltage VGE =15V

IC = 50A Tj = 150°C 1.7 V

VGE(th) Gate Threshold Voltage VGE = VCE , IC = 600µA 5.0 5.8 6.5 V

IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Cies Input Capacitance 3150

Coes Output Capacitance 200

Cres Reverse Transfer Capacitance

VGE = 0V

VCE = 25V

f = 1MHz 95

pF

Td(on) Turn-on Delay Time 110

Tr Rise Time 45

Td(off) Turn-off Delay Time 200

Tf Fall Time

Inductive Switching (25°C)

VGE = ±15V

VBus = 300V

IC = 50A

RG = 10Ω 40

ns

Td(on) Turn-on Delay Time 120

Tr Rise Time 50

Td(off) Turn-off Delay Time 250

Tf Fall Time 60

ns

Eon Turn-on Switching Energy 0.87

Eoff Turn-off Switching Energy

Inductive Switching (150°C)

VGE = ±15V

VBus = 300V

IC = 50A

RG = 10Ω

1.75 mJ

Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

VRRM Maximum Peak Repetitive Reverse Voltage 600 V

Tj = 25°C 250

IRM Maximum Reverse Leakage Current VR=600V Tj = 150°C 500 µA

IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 80°C 50 A

Tj = 25°C 1.6 2

VF Diode Forward Voltage IF = 50A

VGE = 0V Tj = 150°C 1.5 V

Tj = 25°C 125

trr Reverse Recovery Time Tj = 150°C 220 ns

Tj = 25°C 2.6

Qrr Reverse Recovery Charge

IF = 50A

VR = 300V

di/dt =1800A/µs

Tj = 150°C 5.4 µC

APTGT50TA60P

APTGT50TA60P – Rev 0, May, 2005

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Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT 0.85

RthJC Junction to Case Diode 1.42

°C/W

VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V

TJ Operating junction temperature range -40 175

TSTG Storage Temperature Range -40 125

TC Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M6 3 5 N.m

Wt Package Weight 250 g

Package outline (dimensions in mm)

5 places (3:1)

APTGT50TA60P

APTGT50TA60P – Rev 0, May, 2005

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Typical Performance Curve

Output Characteristics (VGE=15V)

TJ=25°C

TJ=125°C

TJ=150°C

0

20

40

60

80

100

00.511.522.53

VCE (V)

IC (A)

Output Characteristics

VGE=15V

VGE=13V

VGE=19V

VGE=9V

0

20

40

60

80

100

0 0.5 1 1.5 2 2.5 3 3.5

VCE (V)

IC (A)

TJ = 150°C

Transfert Characteristics

TJ=25°C

TJ=125°C

TJ=150°C

0

20

40

60

80

100

56789101112

VGE (V)

IC (A)

Energy losses vs Collector Current

Eon

Eoff

Er

0

0.5

1

1.5

2

2.5

3

3.5

0 20406080100

IC (A)

E (mJ)

VCE = 300V

VGE = 15V

RG = 10Ω

TJ = 150°C

Eon

Eoff

Er

0

1

2

3

4

5

6

5 152535455565

Gate Resistance (ohms)

E (mJ)

VCE = 300V

VGE

=15V

IC = 50A

TJ = 15 0°C

Switching Energy Losses vs Gate Resistanc

e

Reverse Bias Safe Operating Area

0

25

50

75

100

125

0 100 200 300 400 500 600 700

VCE (V )

IC (A)

VGE

=15V

TJ=150°C

RG=10Ω

maximum Effective Transient Thermal Impedance, Junction to Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05 Single Pulse

0

0.2

0.4

0.6

0.8

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Rectangular Pulse Duration in Seconds

Thermal Impedance (°C/W)

IGBT

APTGT50TA60P

APTGT50TA60P – Rev 0, May, 2005

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Forward Characteristic of diode

TJ=25°C

TJ=125°C

TJ=150°C

0

20

40

60

80

100

0 0.4 0.8 1.2 1.6 2 2.4

VF (V)

IC (A)

Hard

switching

ZCS

ZVS

0

20

40

60

80

100

120

0 20406080

IC (A)

Fmax, Operating Frequency (kHz)

VCE=300V

D=50%

RG=10Ω

TJ=150°C

Tc=85°C

Operating Frequency vs Collector Curren

t

maximum Effective Transient Thermal Impedance, Junction to Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05 Single Pulse

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

0.00001 0.0001 0.001 0.01 0.1 1 10

Rectangular Pulse Duration in Seconds

Thermal Impedance (°C/W)

Diode

APT rese rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and i nfo rmatio n co nta i ne d he rein

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522