ST] SGS-THOMSON MICROELECTRONICS PO1XxxL SENSITIVE GATE SCR FEATURES a IT(RMs) =0.2A = Vorm = 100V to 400V a Low let < 1A maxto < 200A DESCRIPTION The P0O1xxxL series of SCRs uses a high performance planar PNPN technology. These SOT23 parts are intended for general purpose high (Plastic) volume applications using surface mount technology. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit ItRMs) * | RMS on-state current Ta= 25C 0.26 A (180 conduction angle) tay * Mean on-state current Ta= 25C 0.17 A (180 conduction angle) Itsm Non repetitive surge peak on-state current | tp =8.3 ms 7.5 A (Tj initial = 25C ) tp = 10 ms 7 7t 7t Value for fusing tp = 10 ms 0.24 As dl/dt Critical rate of rise of on-state current 30 Alus Ig =10mA dig /dt = 0.1 A/us. Tstg Storage and operating junction temperature range -40, +150 C qj -40, +125 Tl Maximum lead temperature for soldering during 10s 260 C * : Mounted ona ceramic substrate of 8 x 10 x 0.7mm. Voltage ; Symbol Parameter Unit A B C D Vorm Repetitive peak off-state voltage 100 }; 200 | 300 | 400 Vv VrrM Tj =125C Rex = 1KQ January 1995 1/6PO1xxxL THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) | Junction to ambient * 500 C/W * : Mounted on a ceramic substrate of 8 x 10x 0.7mm. GATE CHARACTERISTICS (maximum values) Pe w=0.02W Pem=1Witp=20us) lam=0.5A (tp = 20 ps) ELECTRICAL CHARACTERISTICS Sensitivity ; Symbol Test Conditions Unit 02 | 09 | 11 | 15 lar Vp=12V (DC) Ri=1402 Ti-25C | MIN| - | - | 4 | 15] pA MAX | 200] 1 25 | 50 Vet | Vp=12V (DC) Ri=1402 Tj= 25C | MAX 0.8 Vap Vp=Vprm RiL=3.3kQ Tj= 125C | MIN 0.1 Rex =1KQ Vreom IR =10HA Tj= 25C | MIN 8 Vv tgd vp=VormM_ Itm= 3x lav) Tj=25C | TYP 0.5 us dig/dt =0.1A/us Ig=10mA ly r= 50mA Rex = 1 KQ Tj= 25C | MAX 5 mA IL le=imA Rex =1KQ Tj= 25C | MAX 6 mA Vim l= 0.4A tp=380pus Tj= 25C | MAX 1.3 V IDRM Vp = Vprm Rex = 1 KO Tj= 25C | MAX 1 HA IRRM Vr =VrAM Tj= 125C | MAX 100 WA dv/dt Vp=67%Vprm Rak = 1 KQ Tj=125C | MIN | 25 | 25 | 50 | 100] V/us tq I= 3x ITav) Va=35V Tj= 125C | MAX 200 us di/dt=10Aqis tp=100us dV/dt=10Vius Vp= 67%Vprm Rex = 1 KQ ORDERING INFORMATION 2/6 MSON SCR PLANAR iE PACKAGE : L=SOT23 CURRENT *_ SENSITIVITY VOLTAGE by scs-THo! RONIGSPO1xxxL Fig.1 : Maximum average power dissipation ver- sus average on-state current. P (W) 0.25 360 0.20 ms \ | L_> ra DC 0.15 Z LEE = 180 0.10 , Z N = 120 YZ O = 90 0.05 = 60 \ I (A) CY = 30 T(AV) Fig.3 : Average on-state current versus tab tem- perature. IT(avy(A) 0.25 0.20 0.15 0.10 DMN Tamb (C) MN 0.00 1 L 1 i. 0 10 20 30 40 50 60 70 80 90 100 110120130 0.05 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt{Tj] Ih[Tj] igt(Tj=25 C] ih[rj=25 C] 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 TICS) -40 -20 O 20 40 60 80 100 120 140 &sr $GS-THOMSON SY/ imicronectRomes Fig.2 : Correlation between maximum average power dissipation and maximum allowable tem- perature (Tamb). P (W) 0.25 0.20 N Rth(j-a 0.15 NY 0.10 J 0.05 Tamb (C) 0.00 Ss 0 20 40 60 80 100 120 140 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(|-a)/Rth(j-a) 1.00 Alumine substrate: 10mm*8mm*0.5mm tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. Its mA) Tj initial = 25C yb oO FF a OD N @ _ Number of cycles 1 10 100 1,000 3/6PO1xxxL Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp < 10ms, and corresponding value of I*t. Ips (A)- Pt (As) 100 initial = 10 0.1 1 Fig.9 : Relative variation of holding current versus gate-cathode resistance (typical values). In(Rgk) 0 in(Rgk=1k @) 1.0 0.1 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06 4/6 Kj 8G8-THOMSON 7 MICROELECTRONICS Fig.8 : On-state characteristics (maximum values). Iya (A) 10 Tj initi 25C Tj max Vto =0.95V Rt =0.600g Yu) 4 45 5 5.5 0.1 0 05 115 2 25 3 3.5PO1xxxL PACKAGE MECHANICAL DATA SOT23 (Plastic) DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 0.93 1.04 0.036 0.041 B 1.20 1.40 0.047 0.055 C 0.15 0.006 D 0.085 0.115 0.003 0.005 E 0.45 0.60 0.018 0.024 F 0.08 0.003 ~ G 0.013 0.10 0.0005 | 0.004 H 1.90 2.05 0.075 0.081 0.95 1.05 0.037 0.041 " " J 0.95 1.05 0.037 0.041 K 2.10 2.50 0.083 0.098 L 0.45 0.60 0.018 0.024 - M 0.37 0.46 0.015 0.018 - * N 2.80 3.00 0.110 0.118 Weight : 0.007 g FOOT PRINT 0.8 [0.6 1.3 0.6] 0.8 12 0.8 5/6 &sr $GS-THOMSON SY/ imicronectRomesPO1xxxL MARKING Type Marking P0102AL P2A P0102BL P2B P0102CL P2C P0102DL P2D PO109AL P9A PO109BL P9B P0109CL P9C P0109DL P9D P0O111AL PIA P0111BL P1B P0111CL P1C P0111DL P1D P0115AL P5A P0115BL P5B P0115CL P5C P0115DL P5D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6 Gz SGS-THOMSON 7 MIGREELECTROMICS